JPS55913B1 - - Google Patents

Info

Publication number
JPS55913B1
JPS55913B1 JP5910871A JP5910871A JPS55913B1 JP S55913 B1 JPS55913 B1 JP S55913B1 JP 5910871 A JP5910871 A JP 5910871A JP 5910871 A JP5910871 A JP 5910871A JP S55913 B1 JPS55913 B1 JP S55913B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5910871A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55913B1 publication Critical patent/JPS55913B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • H10P32/00
    • H10P95/00

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
JP5910871A 1970-09-02 1971-08-06 Pending JPS55913B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Publications (1)

Publication Number Publication Date
JPS55913B1 true JPS55913B1 (enExample) 1980-01-10

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5910871A Pending JPS55913B1 (enExample) 1970-09-02 1971-08-06

Country Status (5)

Country Link
JP (1) JPS55913B1 (enExample)
CH (1) CH506188A (enExample)
DE (1) DE2134528B2 (enExample)
FR (1) FR2105175B1 (enExample)
GB (1) GB1332060A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
CN114582835B (zh) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 反熔丝结构及其制作方法、反熔丝阵列、存储装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
NL235479A (enExample) * 1958-02-04 1900-01-01
NL300609A (enExample) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH497792A (de) * 1968-06-28 1970-10-15 Ibm Verfahren zur Herstellung von Halbleitervorrichtungen

Also Published As

Publication number Publication date
FR2105175B1 (enExample) 1976-05-28
FR2105175A1 (enExample) 1972-04-28
GB1332060A (en) 1973-10-03
CH506188A (de) 1971-04-15
DE2134528A1 (enExample) 1972-04-13
DE2134528B2 (de) 1979-04-19

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