JPS5586121A - Semiconductor surface treatment - Google Patents
Semiconductor surface treatmentInfo
- Publication number
- JPS5586121A JPS5586121A JP15853778A JP15853778A JPS5586121A JP S5586121 A JPS5586121 A JP S5586121A JP 15853778 A JP15853778 A JP 15853778A JP 15853778 A JP15853778 A JP 15853778A JP S5586121 A JPS5586121 A JP S5586121A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- captured
- corona discharge
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce charge capture density to dielectric film by cleaning the dielectric film on the surface of a semiconductor.
CONSTITUTION: When negative or positive corona is charged on the surface of an SiO2 film on an Si substrate, hole or electron is captured from the Si substrate into the SiO2 film. After moving Al+, Fe+, etc. into the SiO2 film in high field by corona charge according to this method, a capture density by Al+, Fe+, etc. in the film can be eliminated almost completely through removing the film surface including them. To be free from an influence of a potential of the negative corona, the negative corona discharge is charged on the SiO2 film surface full in SiO2 withstand voltage, which is then neutralized by washing or positive corona discharge, the electron is captured to the surface by charging the positive corona discharge full in withstand voltage, and the captured layer is etched. The electron is not captured then even from corona discharge, and Al, Fe, etc. can be removed thoroughly. An element characteristic can thus be improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15853778A JPS5586121A (en) | 1978-12-25 | 1978-12-25 | Semiconductor surface treatment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15853778A JPS5586121A (en) | 1978-12-25 | 1978-12-25 | Semiconductor surface treatment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5586121A true JPS5586121A (en) | 1980-06-28 |
Family
ID=15673873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15853778A Pending JPS5586121A (en) | 1978-12-25 | 1978-12-25 | Semiconductor surface treatment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5586121A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635410A (en) * | 1994-07-25 | 1997-06-03 | Dainippon Screen Manufacturing Co., Ltd. | Bias temperature treatment method |
JP2016178131A (en) * | 2015-03-18 | 2016-10-06 | 株式会社東芝 | Semiconductor device and manufacturing method of the same |
-
1978
- 1978-12-25 JP JP15853778A patent/JPS5586121A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5635410A (en) * | 1994-07-25 | 1997-06-03 | Dainippon Screen Manufacturing Co., Ltd. | Bias temperature treatment method |
JP2016178131A (en) * | 2015-03-18 | 2016-10-06 | 株式会社東芝 | Semiconductor device and manufacturing method of the same |
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