JPS5580706A - Production of silicon nitride film - Google Patents

Production of silicon nitride film

Info

Publication number
JPS5580706A
JPS5580706A JP15374078A JP15374078A JPS5580706A JP S5580706 A JPS5580706 A JP S5580706A JP 15374078 A JP15374078 A JP 15374078A JP 15374078 A JP15374078 A JP 15374078A JP S5580706 A JPS5580706 A JP S5580706A
Authority
JP
Japan
Prior art keywords
silicon nitride
nitride film
torr
dichlorosilane
press
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15374078A
Other languages
Japanese (ja)
Inventor
Kazuhiko Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15374078A priority Critical patent/JPS5580706A/en
Publication of JPS5580706A publication Critical patent/JPS5580706A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE: To obtain a high quality silicon nitride film useful in manufacture of a semiconductor on a solid substrate by reacting ammonia and dichlorosilane under reduced press. at a specified temp. to form the film on the substrate.
CONSTITUTION: Ammonia and dichlorosilane are reacted in a dichlorosilane to ammonia molar ratio of 1.0 or less under reduced press. at 800W900°C to form a silicon nitride film on a solid substrate pref. under a forming press. of 80W600mm Torr. In case the forming press. is below 80mm Torr, the film growing speed is low. Considering the uniformity of deposits. it is desirable to adopt a forming press. of 600mm Torr or below under which the average free process of gas particles is well large.
COPYRIGHT: (C)1980,JPO&Japio
JP15374078A 1978-12-14 1978-12-14 Production of silicon nitride film Pending JPS5580706A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15374078A JPS5580706A (en) 1978-12-14 1978-12-14 Production of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15374078A JPS5580706A (en) 1978-12-14 1978-12-14 Production of silicon nitride film

Publications (1)

Publication Number Publication Date
JPS5580706A true JPS5580706A (en) 1980-06-18

Family

ID=15569060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15374078A Pending JPS5580706A (en) 1978-12-14 1978-12-14 Production of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5580706A (en)

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