JPS55130807A - Manufacture of silicon nytride powder - Google Patents
Manufacture of silicon nytride powderInfo
- Publication number
- JPS55130807A JPS55130807A JP4335880A JP4335880A JPS55130807A JP S55130807 A JPS55130807 A JP S55130807A JP 4335880 A JP4335880 A JP 4335880A JP 4335880 A JP4335880 A JP 4335880A JP S55130807 A JPS55130807 A JP S55130807A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- nytride
- silicon
- manufacture
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
PURPOSE: To produce silicon nitride powder not containing chloride impurity, by a method wherein a hydrogen silicide and a nitrogen hydride are reacted in a gas phase and in an inert or reducing atmosphere under a fluidized condition.
CONSTITUTION: A hydrogen silicide and a nitrogen hydride in a molar ratio of silicon to nitrogen of 10W0.01 are reacted in a gas phase and in an inert or reducing atmosphere under 9 fluidized condition at 1,550W1,900°C to produce silicon nitride powder. Examples of hydrogen silicides are SiH4, Si2H6, Si3H8, and Si4H10, and a nitrogen hydride is illustrated by NH3, N2H4, and HN3.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4335880A JPS55130807A (en) | 1980-04-02 | 1980-04-02 | Manufacture of silicon nytride powder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4335880A JPS55130807A (en) | 1980-04-02 | 1980-04-02 | Manufacture of silicon nytride powder |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4602177A Division JPS53130300A (en) | 1977-04-20 | 1977-04-20 | Method of synthesizing silicon nitride or silicon imide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55130807A true JPS55130807A (en) | 1980-10-11 |
JPS578047B2 JPS578047B2 (en) | 1982-02-15 |
Family
ID=12661622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4335880A Granted JPS55130807A (en) | 1980-04-02 | 1980-04-02 | Manufacture of silicon nytride powder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130807A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4929432A (en) * | 1988-10-19 | 1990-05-29 | Union Carbide Corporation | Process for producing crystalline silicon nitride powder |
US4935214A (en) * | 1987-09-15 | 1990-06-19 | United States Department Of Energy | Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants |
CN108285132A (en) * | 2018-04-19 | 2018-07-17 | 苏州协鑫能源技术发展有限公司 | The preparation method of silicon nitride |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118409A (en) * | 1977-03-25 | 1978-10-16 | Tokyo Shibaura Electric Co | Method of manufacturing heat resistant material |
-
1980
- 1980-04-02 JP JP4335880A patent/JPS55130807A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118409A (en) * | 1977-03-25 | 1978-10-16 | Tokyo Shibaura Electric Co | Method of manufacturing heat resistant material |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935214A (en) * | 1987-09-15 | 1990-06-19 | United States Department Of Energy | Process for producing high purity silicon nitride by the direct reaction between elemental silicon and nitrogen-hydrogen liquid reactants |
US4929432A (en) * | 1988-10-19 | 1990-05-29 | Union Carbide Corporation | Process for producing crystalline silicon nitride powder |
CN108285132A (en) * | 2018-04-19 | 2018-07-17 | 苏州协鑫能源技术发展有限公司 | The preparation method of silicon nitride |
CN108285132B (en) * | 2018-04-19 | 2019-11-15 | 苏州协鑫能源技术发展有限公司 | The preparation method of silicon nitride |
Also Published As
Publication number | Publication date |
---|---|
JPS578047B2 (en) | 1982-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1233908A (en) | ||
JPS5747706A (en) | Lump of silicon nitride containing ti and its manufacture | |
DE3371543D1 (en) | Method of making amorphous semiconductor alloys and devices using microwave energy | |
EP0394665A1 (en) | Selective deposition of amorphous and polycrystalline silicon | |
JPS57209810A (en) | Preparation of silicon nitride | |
JPS55130807A (en) | Manufacture of silicon nytride powder | |
JPS57156318A (en) | Production of trichlorosilane | |
EP0228842A3 (en) | Method of making ultrapure silicon nitride precursor | |
GB1328170A (en) | Epitaxial deposition | |
KR920007921A (en) | Silicon diimide, a process for producing the same, and silicon nitride obtained therefrom | |
CA2113768A1 (en) | Preparation of Trialkylsilyl Nitrile | |
JPS54124898A (en) | Preparation of silicon nitride | |
JPS53133600A (en) | Production of silicon nitride | |
JPS5423379A (en) | Formation of insulating film on semiconductor surface | |
Shimizu et al. | Preparation of Silicon Nitride Powder | |
GB1135111A (en) | Improvements in or relating to the manufacture of layers of silicon | |
JPS5234668A (en) | Gaseous phase growing process of semiconductor | |
JPS54134099A (en) | Production of silicon nitride | |
Golubyak et al. | Structure and Some Properties of Silicon Nitride Powders | |
JPS5591815A (en) | Silicon epitaxial growth | |
JPS5423378A (en) | Formation method of insulating film on semiconductor surface | |
JPS5841785B2 (en) | semiconductor equipment | |
JPS57129818A (en) | Formation of silicon dioxide film | |
JPS5692109A (en) | Manufacture of alpha-type silicon nitride powder | |
KR970030477A (en) | Silicon nitride film formation method |