JPS5563829A - Semiconductor etching device - Google Patents

Semiconductor etching device

Info

Publication number
JPS5563829A
JPS5563829A JP13749378A JP13749378A JPS5563829A JP S5563829 A JPS5563829 A JP S5563829A JP 13749378 A JP13749378 A JP 13749378A JP 13749378 A JP13749378 A JP 13749378A JP S5563829 A JPS5563829 A JP S5563829A
Authority
JP
Japan
Prior art keywords
solution
etching
semiconductor
discharged
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13749378A
Other languages
Japanese (ja)
Inventor
Yutaka Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13749378A priority Critical patent/JPS5563829A/en
Publication of JPS5563829A publication Critical patent/JPS5563829A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the oxidization of a semiconductor, by covering the surface of a semiconductor with a processing liquid at the time of cleaning after etching is stopped.
CONSTITUTION: Processing tank 1 is filled with etching solution 19. After etching a semiconductor, recovery discharge valve 7 is opened, and solution 19 is discharged into recovery tank 8 from processing tank 1. The semiconductor is soaked in etching solution 19, and before the etching solution is discharged completely from the processing tank, recovery discharge valve 7 is closed and cleaning solution shower discharge valve 16 is opened. The cleaning solution overflows from the upper part of processing tank 1, flows to conduit 2, dilutes the etching solution and stops the etching. Waste discharge valve 4 is opened, the cleaning solution is blown against the semiconductor from clearing solution shower 17 and thus it is discharged. Valve 4 is closed, valve 15 is opened, the cleaning solution is filled again, it is discharged, and cleaning is done repeatedly. When etching is to be operated again, the cleaning solution is discharged (4), pump 11 is operated, etching solution is supplied from recovery tank 8 to processing tank 1, and thus the etching solution is used again.
COPYRIGHT: (C)1980,JPO&Japio
JP13749378A 1978-11-08 1978-11-08 Semiconductor etching device Pending JPS5563829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13749378A JPS5563829A (en) 1978-11-08 1978-11-08 Semiconductor etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13749378A JPS5563829A (en) 1978-11-08 1978-11-08 Semiconductor etching device

Publications (1)

Publication Number Publication Date
JPS5563829A true JPS5563829A (en) 1980-05-14

Family

ID=15199935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13749378A Pending JPS5563829A (en) 1978-11-08 1978-11-08 Semiconductor etching device

Country Status (1)

Country Link
JP (1) JPS5563829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273543U (en) * 1985-10-25 1987-05-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273543U (en) * 1985-10-25 1987-05-11

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