JPS5556092A - Production of single crystal - Google Patents

Production of single crystal

Info

Publication number
JPS5556092A
JPS5556092A JP12706678A JP12706678A JPS5556092A JP S5556092 A JPS5556092 A JP S5556092A JP 12706678 A JP12706678 A JP 12706678A JP 12706678 A JP12706678 A JP 12706678A JP S5556092 A JPS5556092 A JP S5556092A
Authority
JP
Japan
Prior art keywords
single crystal
rod
infrared rays
production
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12706678A
Other languages
Japanese (ja)
Inventor
Akihiko Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12706678A priority Critical patent/JPS5556092A/en
Publication of JPS5556092A publication Critical patent/JPS5556092A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16Heating of the molten zone
    • C30B13/22Heating of the molten zone by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To easily produce a high quality single crystal of a large diameter by vertically moving a raw material rod and/or a growing crystal while turning them in production of a single crystal by a floating zone method using infrared rays.
CONSTITUTION: In production of a single crystal by floating zone method by which infrared rays from a halogen lamp or a xenon lamp are concentrated with a spheriocal mirror to heat melt a raw material rod followed by crystallization, the rod and a growing crystal are usually turned in opposite directions, and motions for bringing them close to each other and detaching them are repeated periodically. By this method, when they are brought close to each other, a thick melting zone is formed, resulting in a single crystal of a large diameter. As they are detached, the zone becomes thin, and infrared rays reach the central part of the rod to well heat the rod.
COPYRIGHT: (C)1980,JPO&Japio
JP12706678A 1978-10-16 1978-10-16 Production of single crystal Pending JPS5556092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12706678A JPS5556092A (en) 1978-10-16 1978-10-16 Production of single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12706678A JPS5556092A (en) 1978-10-16 1978-10-16 Production of single crystal

Publications (1)

Publication Number Publication Date
JPS5556092A true JPS5556092A (en) 1980-04-24

Family

ID=14950733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12706678A Pending JPS5556092A (en) 1978-10-16 1978-10-16 Production of single crystal

Country Status (1)

Country Link
JP (1) JPS5556092A (en)

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