JPS5554467A - Voltage detection circuit - Google Patents

Voltage detection circuit

Info

Publication number
JPS5554467A
JPS5554467A JP8037378A JP8037378A JPS5554467A JP S5554467 A JPS5554467 A JP S5554467A JP 8037378 A JP8037378 A JP 8037378A JP 8037378 A JP8037378 A JP 8037378A JP S5554467 A JPS5554467 A JP S5554467A
Authority
JP
Japan
Prior art keywords
resistance
fet
voltage
source
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8037378A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Honda
Kenichi Yoda
Kazuhiro Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP8037378A priority Critical patent/JPS5554467A/en
Publication of JPS5554467A publication Critical patent/JPS5554467A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measurement Of Current Or Voltage (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE: To prevent an influence of a temperature and also to reduce power consumption by simplifying circuit constitution by applying PUT with a variable voltage developed through P-type FET as a reference voltage.
CONSTITUTION: Of reference voltage generating circuit 5, N-type field effect transistor FET is connected to current power supply 1 and further to current limiting variable resistance RS and high resistance RL in series, and its gate is connected to its source through resistance RS while the source is connected to the negative side of power supply 1 through resistance RL; since there is no need to provide a Zener diode, a broad-range variable reference voltage is developed at the source of FET through resistance RS without reference to a temperature by high impedance of FET with small power consumption. Therefore, the source voltage of FET to PUT which does not get latched when current control high resistance Ra is series-connected to the negative side of power supply 1 to detect a voltage, equivalent to a broad-range detection voltage through PUT by the simple constitution under no influence of the temperature with small power consumption.
COPYRIGHT: (C)1980,JPO&Japio
JP8037378A 1978-06-30 1978-06-30 Voltage detection circuit Pending JPS5554467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8037378A JPS5554467A (en) 1978-06-30 1978-06-30 Voltage detection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8037378A JPS5554467A (en) 1978-06-30 1978-06-30 Voltage detection circuit

Publications (1)

Publication Number Publication Date
JPS5554467A true JPS5554467A (en) 1980-04-21

Family

ID=13716468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8037378A Pending JPS5554467A (en) 1978-06-30 1978-06-30 Voltage detection circuit

Country Status (1)

Country Link
JP (1) JPS5554467A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346241U (en) * 1989-04-25 1991-04-30
JP2008026123A (en) * 2006-07-20 2008-02-07 Matsushita Electric Ind Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0346241U (en) * 1989-04-25 1991-04-30
JP2008026123A (en) * 2006-07-20 2008-02-07 Matsushita Electric Ind Co Ltd Semiconductor device
JP4671927B2 (en) * 2006-07-20 2011-04-20 パナソニック株式会社 Semiconductor device

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