JPS55501041A - - Google Patents

Info

Publication number
JPS55501041A
JPS55501041A JP50020880A JP50020880A JPS55501041A JP S55501041 A JPS55501041 A JP S55501041A JP 50020880 A JP50020880 A JP 50020880A JP 50020880 A JP50020880 A JP 50020880A JP S55501041 A JPS55501041 A JP S55501041A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50020880A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55501041A publication Critical patent/JPS55501041A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G25/00—Watering gardens, fields, sports grounds or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Environmental Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Water Supply & Treatment (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP50020880A 1978-12-20 1979-12-06 Pending JPS55501041A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97188678A 1978-12-20 1978-12-20

Publications (1)

Publication Number Publication Date
JPS55501041A true JPS55501041A (ko) 1980-11-27

Family

ID=25518914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50020880A Pending JPS55501041A (ko) 1978-12-20 1979-12-06

Country Status (22)

Country Link
JP (1) JPS55501041A (ko)
KR (1) KR830000497B1 (ko)
AU (1) AU529486B2 (ko)
BE (1) BE880727A (ko)
CA (1) CA1131800A (ko)
CH (1) CH659152A5 (ko)
DD (1) DD147898A5 (ko)
ES (1) ES487065A1 (ko)
FR (1) FR2445028B1 (ko)
GB (1) GB2049282B (ko)
HK (1) HK69284A (ko)
HU (1) HU181028B (ko)
IE (1) IE48719B1 (ko)
IL (1) IL58973A (ko)
IN (1) IN152898B (ko)
IT (1) IT1126602B (ko)
NL (1) NL7920185A (ko)
PL (1) PL220496A1 (ko)
SE (1) SE438577B (ko)
SG (1) SG34884G (ko)
TR (1) TR21213A (ko)
WO (1) WO1980001338A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011389A (ko) * 1973-05-30 1975-02-05
JPS5168777A (ja) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4933432B1 (ko) * 1968-12-20 1974-09-06
DE2102103A1 (de) * 1970-01-22 1971-07-29 Rca Corp Durch Feldeffekt gesteuerte Diode
US3722079A (en) * 1970-06-05 1973-03-27 Radiation Inc Process for forming buried layers to reduce collector resistance in top contact transistors
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
US3911463A (en) * 1974-01-07 1975-10-07 Gen Electric Planar unijunction transistor
US4146905A (en) * 1974-06-18 1979-03-27 U.S. Philips Corporation Semiconductor device having complementary transistor structures and method of manufacturing same
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011389A (ko) * 1973-05-30 1975-02-05
JPS5168777A (ja) * 1974-12-11 1976-06-14 Fujitsu Ltd Fuseiteikohandotaisochi
JPS5250176A (en) * 1975-10-20 1977-04-21 Semiconductor Res Found Electrostatic induction type thyristor

Also Published As

Publication number Publication date
DD147898A5 (de) 1981-04-22
TR21213A (tr) 1984-01-02
IT1126602B (it) 1986-05-21
GB2049282A (en) 1980-12-17
CH659152A5 (de) 1986-12-31
ES487065A1 (es) 1980-09-16
AU529486B2 (en) 1983-06-09
WO1980001338A1 (en) 1980-06-26
HU181028B (en) 1983-05-30
SG34884G (en) 1985-11-15
IL58973A (en) 1982-07-30
AU5386879A (en) 1980-06-26
SE8005746L (sv) 1980-08-14
IL58973A0 (en) 1980-03-31
IE48719B1 (en) 1985-05-01
NL7920185A (nl) 1980-10-31
IT7928205A0 (it) 1979-12-19
KR830000497B1 (ko) 1983-03-10
SE438577B (sv) 1985-04-22
HK69284A (en) 1984-09-14
GB2049282B (en) 1983-05-18
BE880727A (fr) 1980-04-16
FR2445028A1 (fr) 1980-07-18
IE792473L (en) 1980-06-20
CA1131800A (en) 1982-09-14
IN152898B (ko) 1984-04-28
FR2445028B1 (fr) 1985-10-11
PL220496A1 (ko) 1980-09-08

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