JPS55500965A - - Google Patents
Info
- Publication number
- JPS55500965A JPS55500965A JP50018479A JP50018479A JPS55500965A JP S55500965 A JPS55500965 A JP S55500965A JP 50018479 A JP50018479 A JP 50018479A JP 50018479 A JP50018479 A JP 50018479A JP S55500965 A JPS55500965 A JP S55500965A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96401478A | 1978-11-27 | 1978-11-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55500965A true JPS55500965A (nl) | 1980-11-13 |
Family
ID=25508027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50018479A Pending JPS55500965A (nl) | 1978-11-27 | 1979-11-26 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0020708A4 (nl) |
JP (1) | JPS55500965A (nl) |
WO (1) | WO1980001122A1 (nl) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1191561B (it) * | 1986-06-03 | 1988-03-23 | Sgs Microelettrica Spa | Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente |
JP2744126B2 (ja) * | 1990-10-17 | 1998-04-28 | 株式会社東芝 | 半導体装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3719866A (en) * | 1970-12-03 | 1973-03-06 | Ncr | Semiconductor memory device |
JPS5024084A (nl) * | 1973-07-05 | 1975-03-14 | ||
DE2418582C3 (de) * | 1974-04-17 | 1978-09-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MNOS-Transistor, insbesondere MNOS-Transistor mit kurzer Kanalzone, für kurze Einschreibzeiten |
US4068217A (en) * | 1975-06-30 | 1978-01-10 | International Business Machines Corporation | Ultimate density non-volatile cross-point semiconductor memory array |
US4017888A (en) * | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
JPS52105784A (en) * | 1976-03-01 | 1977-09-05 | Sony Corp | Mios type memory unit |
DE2720715A1 (de) * | 1977-05-07 | 1978-11-09 | Itt Ind Gmbh Deutsche | Mnos-speichertransistor |
US4151538A (en) * | 1978-01-30 | 1979-04-24 | Rca Corp. | Nonvolatile semiconductive memory device and method of its manufacture |
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1979
- 1979-11-26 JP JP50018479A patent/JPS55500965A/ja active Pending
- 1979-11-26 WO PCT/US1979/001025 patent/WO1980001122A1/en not_active Application Discontinuation
-
1980
- 1980-06-03 EP EP19800900104 patent/EP0020708A4/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO1980001122A1 (en) | 1980-05-29 |
EP0020708A1 (en) | 1981-01-07 |
EP0020708A4 (en) | 1983-03-07 |