JPS55500707A - - Google Patents

Info

Publication number
JPS55500707A
JPS55500707A JP50159179A JP50159179A JPS55500707A JP S55500707 A JPS55500707 A JP S55500707A JP 50159179 A JP50159179 A JP 50159179A JP 50159179 A JP50159179 A JP 50159179A JP S55500707 A JPS55500707 A JP S55500707A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50159179A
Other languages
Japanese (ja)
Other versions
JPH0225247B2 (OSRAM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55500707A publication Critical patent/JPS55500707A/ja
Publication of JPH0225247B2 publication Critical patent/JPH0225247B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP54501591A 1978-09-13 1979-09-06 Expired - Lifetime JPH0225247B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/941,776 US4171489A (en) 1978-09-13 1978-09-13 Radiation mask structure

Publications (2)

Publication Number Publication Date
JPS55500707A true JPS55500707A (OSRAM) 1980-09-25
JPH0225247B2 JPH0225247B2 (OSRAM) 1990-06-01

Family

ID=25477045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54501591A Expired - Lifetime JPH0225247B2 (OSRAM) 1978-09-13 1979-09-06

Country Status (6)

Country Link
US (1) US4171489A (OSRAM)
EP (1) EP0020455B1 (OSRAM)
JP (1) JPH0225247B2 (OSRAM)
CA (1) CA1129635A (OSRAM)
DE (1) DE2965853D1 (OSRAM)
WO (1) WO1980000634A1 (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4253029A (en) * 1979-05-23 1981-02-24 Bell Telephone Laboratories, Incorporated Mask structure for x-ray lithography
JPS5610928A (en) * 1979-07-07 1981-02-03 Shinetsu Sekiei Kk Preparation of electronic device
AT371947B (de) * 1979-12-27 1983-08-10 Rudolf Sacher Ges M B H Freitragende maske, verfahren zur herstellung derselben und verfahren zum maskieren von substraten
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
US4522842A (en) * 1982-09-09 1985-06-11 At&T Bell Laboratories Boron nitride X-ray masks with controlled stress
US5112707A (en) * 1983-09-26 1992-05-12 Canon Kabushiki Kaisha Mask structure for lithography
DE3435177A1 (de) * 1983-09-26 1985-04-11 Canon K.K., Tokio/Tokyo Maske fuer lithographische zwecke
US4632871A (en) * 1984-02-16 1986-12-30 Varian Associates, Inc. Anodic bonding method and apparatus for X-ray masks
US4539278A (en) * 1984-03-12 1985-09-03 Eaton Corporation Mask structure for X-ray lithography and method for making same
DE3524196C3 (de) * 1984-07-06 1994-08-04 Canon Kk Lithografiemaske
US4668336A (en) * 1985-07-23 1987-05-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4608268A (en) * 1985-07-23 1986-08-26 Micronix Corporation Process for making a mask used in x-ray photolithography
US4708919A (en) * 1985-08-02 1987-11-24 Micronix Corporation Process for manufacturing a mask for use in X-ray photolithography using a monolithic support and resulting structure
US4820546A (en) * 1986-09-19 1989-04-11 Fujitsu Limited Method for production of X-ray-transparent membrane
JPS63114124A (ja) * 1986-10-31 1988-05-19 Res Dev Corp Of Japan Ｘ線マスク用メンブレンおよび製造法
US4868093A (en) * 1987-05-01 1989-09-19 American Telephone And Telegraph Company, At&T Bell Laboratories Device fabrication by X-ray lithography utilizing stable boron nitride mask
JP4220229B2 (ja) * 2002-12-16 2009-02-04 大日本印刷株式会社 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法
US9231063B2 (en) 2014-02-24 2016-01-05 International Business Machines Corporation Boron rich nitride cap for total ionizing dose mitigation in SOI devices

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120270A (OSRAM) * 1974-02-15 1975-09-20
JPS52105777A (en) * 1976-03-02 1977-09-05 Toshiba Corp Microscopic diagram transcribing device
JPS52149979A (en) * 1976-06-08 1977-12-13 Western Electric Co Mask structure for xxray lithography and method of manufacture thereof
JPS52153673A (en) * 1976-06-15 1977-12-20 Siemens Ag Method of manufacturing mask for xxray lithography
JPS5329574A (en) * 1976-08-31 1978-03-18 Oki Electric Ind Co Ltd Transmitting type photoelectric switch
JPS5385170A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Soft x-ray transfer mask

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742230A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask support substrate
US3742229A (en) * 1972-06-29 1973-06-26 Massachusetts Inst Technology Soft x-ray mask alignment system
US3873824A (en) * 1973-10-01 1975-03-25 Texas Instruments Inc X-ray lithography mask

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50120270A (OSRAM) * 1974-02-15 1975-09-20
JPS52105777A (en) * 1976-03-02 1977-09-05 Toshiba Corp Microscopic diagram transcribing device
JPS52149979A (en) * 1976-06-08 1977-12-13 Western Electric Co Mask structure for xxray lithography and method of manufacture thereof
JPS52153673A (en) * 1976-06-15 1977-12-20 Siemens Ag Method of manufacturing mask for xxray lithography
JPS5329574A (en) * 1976-08-31 1978-03-18 Oki Electric Ind Co Ltd Transmitting type photoelectric switch
JPS5385170A (en) * 1977-01-05 1978-07-27 Hitachi Ltd Soft x-ray transfer mask

Also Published As

Publication number Publication date
DE2965853D1 (en) 1983-08-18
EP0020455A4 (en) 1981-09-01
CA1129635A (en) 1982-08-17
US4171489A (en) 1979-10-16
EP0020455A1 (en) 1981-01-07
WO1980000634A1 (en) 1980-04-03
EP0020455B1 (en) 1983-07-13
JPH0225247B2 (OSRAM) 1990-06-01

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