JPS55500033A - - Google Patents
Info
- Publication number
- JPS55500033A JPS55500033A JP50026879A JP50026879A JPS55500033A JP S55500033 A JPS55500033 A JP S55500033A JP 50026879 A JP50026879 A JP 50026879A JP 50026879 A JP50026879 A JP 50026879A JP S55500033 A JPS55500033 A JP S55500033A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86654178A | 1978-01-03 | 1978-01-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55500033A true JPS55500033A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1980-01-24 |
| JPH0160951B2 JPH0160951B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-12-26 |
Family
ID=25347830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54500268A Expired JPH0160951B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-01-03 | 1979-01-02 |
Country Status (4)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
| CA1164562A (en) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Semiconductor memory device |
| USD1020530S1 (en) * | 2023-06-28 | 2024-04-02 | Weiwen CAI | Table ornament |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3796927A (en) * | 1970-12-16 | 1974-03-12 | Bell Telephone Labor Inc | Three dimensional charge coupled devices |
| US3893152A (en) * | 1973-07-25 | 1975-07-01 | Hung Chang Lin | Metal nitride oxide semiconductor integrated circuit structure |
| US3893085A (en) * | 1973-11-28 | 1975-07-01 | Ibm | Read mostly memory cell having bipolar and FAMOS transistor |
| CA1074009A (en) * | 1975-03-03 | 1980-03-18 | Robert W. Brodersen | Charge coupled device memory |
| US3974486A (en) * | 1975-04-07 | 1976-08-10 | International Business Machines Corporation | Multiplication mode bistable field effect transistor and memory utilizing same |
| DE2543628C2 (de) * | 1975-09-30 | 1987-05-07 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen |
| CH597997A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-02-24 | 1978-04-28 | Lpa Les Produits Associes | |
| DE2642145A1 (de) * | 1976-09-20 | 1978-03-23 | Siemens Ag | Verfahren zum betrieb einer cid-anordnung |
| US4112575A (en) * | 1976-12-20 | 1978-09-12 | Texas Instruments Incorporated | Fabrication methods for the high capacity ram cell |
| NL7700879A (nl) * | 1977-01-28 | 1978-08-01 | Philips Nv | Halfgeleiderinrichting. |
| NL7701172A (nl) * | 1977-02-04 | 1978-08-08 | Philips Nv | Halfgeleidergeheugeninrichting. |
| DE2730798A1 (de) * | 1977-07-07 | 1979-01-25 | Siemens Ag | Verfahren zum herstellen einer aus einem feldeffekttransistor mit isolierter steuerelektrode und einem kondensator integrierten halbleiterspeicherzelle |
| DE2736473A1 (de) * | 1977-08-12 | 1979-02-22 | Siemens Ag | Verfahren zum herstellen einer ein- transistor-speicherzelle |
| DE2743948A1 (de) * | 1977-09-29 | 1979-04-12 | Siemens Ag | Dynamisches halbleiter-speicherelement |
| GB2095901B (en) * | 1977-10-13 | 1983-02-23 | Mohsen Amr Mohamed | An mos transistor |
| US4190466A (en) * | 1977-12-22 | 1980-02-26 | International Business Machines Corporation | Method for making a bipolar transistor structure utilizing self-passivating diffusion sources |
-
1979
- 1979-01-02 JP JP54500268A patent/JPH0160951B2/ja not_active Expired
- 1979-01-02 GB GB7926605A patent/GB2060997A/en not_active Withdrawn
- 1979-01-02 WO PCT/US1979/000001 patent/WO1979000474A1/en unknown
- 1979-07-31 EP EP19790900086 patent/EP0007910A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB2060997A (en) | 1981-05-07 |
| EP0007910A1 (en) | 1980-02-06 |
| JPH0160951B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-12-26 |
| WO1979000474A1 (en) | 1979-07-26 |
| EP0007910A4 (en) | 1980-11-28 |