JPS5545215A - Transistor amplifier - Google Patents

Transistor amplifier

Info

Publication number
JPS5545215A
JPS5545215A JP11804078A JP11804078A JPS5545215A JP S5545215 A JPS5545215 A JP S5545215A JP 11804078 A JP11804078 A JP 11804078A JP 11804078 A JP11804078 A JP 11804078A JP S5545215 A JPS5545215 A JP S5545215A
Authority
JP
Japan
Prior art keywords
transistors
amplifier
bases
type
constitute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11804078A
Other languages
Japanese (ja)
Inventor
Hiroyasu Yamaguchi
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11804078A priority Critical patent/JPS5545215A/en
Publication of JPS5545215A publication Critical patent/JPS5545215A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45112Complementary long tailed pairs having parallel inputs and being supplied in parallel
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3076Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with symmetrical driving of the end stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45664Indexing scheme relating to differential amplifiers the LC comprising one or more cascaded inverter stages as output stage at one output of the dif amp circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45668Indexing scheme relating to differential amplifiers the LC comprising a level shifter circuit, which does not comprise diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45671Indexing scheme relating to differential amplifiers the LC comprising one or more diodes as level shifter
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45674Indexing scheme relating to differential amplifiers the LC comprising one current mirror
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45722Indexing scheme relating to differential amplifiers the LC comprising one or more source followers, as post buffer or driver stages, in cascade in the LC

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To reduce considerably the input current of an amplifier and reduce the offset voltage also by using PNP-type and NPN-type bipolar transistors to constitute the differential amplifier and connecting commonly their corresponding bases. CONSTITUTION:Transistors Q1 and Q2 are PNP-type transistors to constitute a differential amplifier, and transistors Q2 and Q4 are NPN-type transistors to constitute a differential amplifier. Next, input terminal 1 of the circuit is connected to one end of resistance R1, which has the other end grounded, and bases of transistors Q1 and Q3. Then, emitters of transistors Q1 and Q2 are connected to the collector of transistor Q6, and bases of transistors Q5 and Q6 are connected through resistance R2. Currents flowed to bases of transistors Q1 and Q3 are denoted as I1B and I3B, and -I1B=I3B is set to cancel both base currents. As a result, the input current to the amplifier becomes 0 approximately and can be made into DC, and the amplifier has gm smaller than the DC amplifier using FETs, so that noise may be small, and the offset voltage may be reduced.
JP11804078A 1978-09-27 1978-09-27 Transistor amplifier Pending JPS5545215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11804078A JPS5545215A (en) 1978-09-27 1978-09-27 Transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11804078A JPS5545215A (en) 1978-09-27 1978-09-27 Transistor amplifier

Publications (1)

Publication Number Publication Date
JPS5545215A true JPS5545215A (en) 1980-03-29

Family

ID=14726548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11804078A Pending JPS5545215A (en) 1978-09-27 1978-09-27 Transistor amplifier

Country Status (1)

Country Link
JP (1) JPS5545215A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178005A (en) * 1983-03-18 1984-10-09 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Differential amplifier with biplar transistor
JPS6021617A (en) * 1983-07-18 1985-02-04 Nec Corp Voltage detecting circuit
JPH03101272U (en) * 1990-02-01 1991-10-22
EP0827272A1 (en) * 1996-08-29 1998-03-04 Fujitsu Limited Operational amplifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178005A (en) * 1983-03-18 1984-10-09 サ−トル・エレクトロニク・オルロジユ−ル・ソシエテ・アノニム Differential amplifier with biplar transistor
JPH0544847B2 (en) * 1983-03-18 1993-07-07 Centre Electron Horloger
JPS6021617A (en) * 1983-07-18 1985-02-04 Nec Corp Voltage detecting circuit
JPH03101272U (en) * 1990-02-01 1991-10-22
EP0827272A1 (en) * 1996-08-29 1998-03-04 Fujitsu Limited Operational amplifier
US5909146A (en) * 1996-08-29 1999-06-01 Fujitsu Limited Operational amplifier having rail to rail input/output ability

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