JPS5545158A - Mis field effect semiconductor circuit device - Google Patents
Mis field effect semiconductor circuit deviceInfo
- Publication number
- JPS5545158A JPS5545158A JP11794478A JP11794478A JPS5545158A JP S5545158 A JPS5545158 A JP S5545158A JP 11794478 A JP11794478 A JP 11794478A JP 11794478 A JP11794478 A JP 11794478A JP S5545158 A JPS5545158 A JP S5545158A
- Authority
- JP
- Japan
- Prior art keywords
- generating circuit
- circuit
- substrate voltage
- current
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To allow a MIS semiconductor circuit device to oscillate definitely with small power consumption by cutting off or reducing a current which flows from a power supply synchronizing with a chip enable signal while a substrate voltage generating circuit stops oscillating. CONSTITUTION:Dynamic memory cell of a MISFET semiconductor device consists of timing signal generating circuit 8, address buffer 3, dynamic memory cell 5, substrate voltage generating circuit 13, etc. This cell 1 is externally controlled and then put in an operation or stand-by state by chip enable signal CE varying betweel low and high levels; and a word line is selected by a timing pulse outputted by timing pulse generating circuit 9 synchronizing with signal CE and while circuit 13 stops oscillating, a current from a power supply is cut off or reduced by controlling control elements of circuit 13 to control self-oscillation by a stationary current, so that while oscillation operation is definitely carried out with small power consumption, the substrate voltage will be controlled.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53117944A JPS6050000B2 (en) | 1978-09-27 | 1978-09-27 | MIS field effect semiconductor circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53117944A JPS6050000B2 (en) | 1978-09-27 | 1978-09-27 | MIS field effect semiconductor circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5545158A true JPS5545158A (en) | 1980-03-29 |
JPS6050000B2 JPS6050000B2 (en) | 1985-11-06 |
Family
ID=14724082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53117944A Expired JPS6050000B2 (en) | 1978-09-27 | 1978-09-27 | MIS field effect semiconductor circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6050000B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59162690A (en) * | 1983-03-04 | 1984-09-13 | Nec Corp | Artificial static memory |
JPS615497A (en) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH02351A (en) * | 1982-09-16 | 1990-01-05 | Texas Instr Inc <Ti> | Semiconductor device |
-
1978
- 1978-09-27 JP JP53117944A patent/JPS6050000B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02351A (en) * | 1982-09-16 | 1990-01-05 | Texas Instr Inc <Ti> | Semiconductor device |
JPS59162690A (en) * | 1983-03-04 | 1984-09-13 | Nec Corp | Artificial static memory |
JPH0311033B2 (en) * | 1983-03-04 | 1991-02-15 | Nippon Electric Co | |
JPS615497A (en) * | 1984-06-20 | 1986-01-11 | Hitachi Ltd | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS6050000B2 (en) | 1985-11-06 |
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