JPS5540180B2 - - Google Patents
Info
- Publication number
- JPS5540180B2 JPS5540180B2 JP11596475A JP11596475A JPS5540180B2 JP S5540180 B2 JPS5540180 B2 JP S5540180B2 JP 11596475 A JP11596475 A JP 11596475A JP 11596475 A JP11596475 A JP 11596475A JP S5540180 B2 JPS5540180 B2 JP S5540180B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11596475A JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5240978A JPS5240978A (en) | 1977-03-30 |
| JPS5540180B2 true JPS5540180B2 (en, 2012) | 1980-10-16 |
Family
ID=14675486
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11596475A Granted JPS5240978A (en) | 1975-09-27 | 1975-09-27 | Process for production of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5240978A (en, 2012) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55150231A (en) * | 1979-05-14 | 1980-11-22 | Hitachi Ltd | Opening method of insulating film |
| JPS5612770A (en) * | 1979-07-11 | 1981-02-07 | Hitachi Ltd | Semiconductor device and its manufacturing device |
| JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5735317A (en) * | 1980-08-13 | 1982-02-25 | Nec Kyushu Ltd | Semiconductor device |
| JPS57170535A (en) * | 1981-04-15 | 1982-10-20 | Toshiba Corp | Etching method for thin silicon film |
| JPS57190332A (en) * | 1981-05-19 | 1982-11-22 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS57199223A (en) * | 1981-06-01 | 1982-12-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPS57198646A (en) * | 1981-06-01 | 1982-12-06 | Seiko Epson Corp | Manufacture of semiconductor device |
| JPS58127328A (ja) * | 1982-01-26 | 1983-07-29 | Seiko Epson Corp | 半導体基板の絶縁保護膜の蝕刻方法 |
| FR2529714A1 (fr) * | 1982-07-01 | 1984-01-06 | Commissariat Energie Atomique | Procede de realisation de l'oxyde de champ d'un circuit integre |
| JPS59189626A (ja) * | 1983-04-13 | 1984-10-27 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPS60160126A (ja) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US4522681A (en) * | 1984-04-23 | 1985-06-11 | General Electric Company | Method for tapered dry etching |
| JPS63100780A (ja) * | 1986-10-17 | 1988-05-02 | Fuji Electric Co Ltd | 圧力センサの製造方法 |
| JPS6297332A (ja) * | 1986-10-24 | 1987-05-06 | Matsushita Electric Ind Co Ltd | Ｍｏｓトランジスタの製造方法 |
| JPH0748485B2 (ja) * | 1987-02-23 | 1995-05-24 | 日本電装株式会社 | エツチング方法 |
| JPS63237527A (ja) * | 1987-03-26 | 1988-10-04 | Hoya Corp | レジスト剥離方法 |
| US5068707A (en) * | 1990-05-02 | 1991-11-26 | Nec Electronics Inc. | DRAM memory cell with tapered capacitor electrodes |
-
1975
- 1975-09-27 JP JP11596475A patent/JPS5240978A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5240978A (en) | 1977-03-30 |