JPS5534592A - Gunn diode oscillator - Google Patents
Gunn diode oscillatorInfo
- Publication number
- JPS5534592A JPS5534592A JP10830878A JP10830878A JPS5534592A JP S5534592 A JPS5534592 A JP S5534592A JP 10830878 A JP10830878 A JP 10830878A JP 10830878 A JP10830878 A JP 10830878A JP S5534592 A JPS5534592 A JP S5534592A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- dvb
- gunn diode
- series
- oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
- H03B9/14—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
- H03B9/145—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity
Abstract
PURPOSE:To carry out the temperature compensation for oscillation frequency econimically and simply by inserting a resistance in series into bias supplying source equipped on the external of an oscillator. CONSTITUTION:Cavity wall 3, which is made from metals, consisting of cavity 2 is equipped and metal post 4 which applied biases to Gunn diode 1, which is insulated in series from cavity wall 3 and earthed in high frequency, are also equipped with the oscillator. When a bias is applied to Gunn diode 1 through series resistance 8, a micro wave is outputted from circular or square-shape hole 6 called as an iris. In case of defining that the voltage of power source 5 is VB, the voltage applied to Gunn diode 1 is VS, resistance value of resistance 8 is R, and bias current is IB, VB=V'B-IBR is formed, and when the formula is differenciated by a temperature, dVB/dV=-RdIS/dT=RK is formed. When dIB/dT=-K, df/dVB=P, df/ dT=df/dVB.dVB/dT=PRK>O is formed. When K=1.25mA/ deg.C, P=4000kHz/V and R=10OMEGA for example, df/dT=50KHz/ deg.C is formed, so that the temperature compensation of 50KHz/ deg.C is available by means of applying the resistance of 10OMEGA.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10830878A JPS5534592A (en) | 1978-09-04 | 1978-09-04 | Gunn diode oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10830878A JPS5534592A (en) | 1978-09-04 | 1978-09-04 | Gunn diode oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5534592A true JPS5534592A (en) | 1980-03-11 |
Family
ID=14481405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10830878A Pending JPS5534592A (en) | 1978-09-04 | 1978-09-04 | Gunn diode oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5534592A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63143884A (en) * | 1986-12-08 | 1988-06-16 | Fujitsu Ltd | Magnetoresistance element |
-
1978
- 1978-09-04 JP JP10830878A patent/JPS5534592A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63143884A (en) * | 1986-12-08 | 1988-06-16 | Fujitsu Ltd | Magnetoresistance element |
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