JPS5533099A - Method of manufacturing charge coupled device - Google Patents
Method of manufacturing charge coupled deviceInfo
- Publication number
- JPS5533099A JPS5533099A JP10900679A JP10900679A JPS5533099A JP S5533099 A JPS5533099 A JP S5533099A JP 10900679 A JP10900679 A JP 10900679A JP 10900679 A JP10900679 A JP 10900679A JP S5533099 A JPS5533099 A JP S5533099A
- Authority
- JP
- Japan
- Prior art keywords
- coupled device
- charge coupled
- manufacturing charge
- manufacturing
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19782837485 DE2837485A1 (de) | 1978-08-28 | 1978-08-28 | Verfahren zur herstellung einer ladungsgekoppelten anordnung fuer sensoren und speicher |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5533099A true JPS5533099A (en) | 1980-03-08 |
Family
ID=6048079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10900679A Pending JPS5533099A (en) | 1978-08-28 | 1979-08-27 | Method of manufacturing charge coupled device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4231810A (ja) |
JP (1) | JPS5533099A (ja) |
DE (1) | DE2837485A1 (ja) |
FR (1) | FR2435129A1 (ja) |
GB (1) | GB2030360A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5198880A (en) * | 1989-06-22 | 1993-03-30 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit and method of making the same |
US5182623A (en) * | 1989-11-13 | 1993-01-26 | Texas Instruments Incorporated | Charge coupled device/charge super sweep image system and method for making |
US5073807A (en) * | 1990-08-02 | 1991-12-17 | Motorola, Inc. | Method and apparatus for achieving multiple acoustic charge transport device input contacts |
KR940001429B1 (ko) * | 1990-12-11 | 1994-02-23 | 삼성전자 주식회사 | 고체영상 소자의 출력장치 |
JP3006521B2 (ja) * | 1996-11-28 | 2000-02-07 | 日本電気株式会社 | 電荷転送装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
US3792465A (en) * | 1971-12-30 | 1974-02-12 | Texas Instruments Inc | Charge transfer solid state display |
NL165886C (nl) * | 1972-04-03 | 1981-05-15 | Hitachi Ltd | Halfgeleiderinrichting van het ladingsgekoppelde type voor het opslaan en in volgorgde overdragen van pakketten meerderheidsladingdragers. |
US3918997A (en) * | 1974-12-06 | 1975-11-11 | Bell Telephone Labor Inc | Method of fabricating uniphase charge coupled devices |
US4047215A (en) * | 1975-01-31 | 1977-09-06 | Texas Instruments Incorporated | Uniphase charge coupled devices |
US3930893A (en) * | 1975-03-03 | 1976-01-06 | Honeywell Information Systems, Inc. | Conductivity connected charge-coupled device fabrication process |
US4024563A (en) * | 1975-09-02 | 1977-05-17 | Texas Instruments Incorporated | Doped oxide buried channel charge-coupled device |
DE2554638A1 (de) * | 1975-12-04 | 1977-06-16 | Siemens Ag | Verfahren zur erzeugung definierter boeschungswinkel bei einer aetzkante |
-
1978
- 1978-08-28 DE DE19782837485 patent/DE2837485A1/de not_active Withdrawn
-
1979
- 1979-08-13 US US06/065,960 patent/US4231810A/en not_active Expired - Lifetime
- 1979-08-22 GB GB7929243A patent/GB2030360A/en not_active Withdrawn
- 1979-08-27 JP JP10900679A patent/JPS5533099A/ja active Pending
- 1979-08-27 FR FR7921451A patent/FR2435129A1/fr active Pending
Also Published As
Publication number | Publication date |
---|---|
US4231810A (en) | 1980-11-04 |
FR2435129A1 (fr) | 1980-03-28 |
GB2030360A (en) | 1980-04-02 |
DE2837485A1 (de) | 1980-04-17 |
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