JPS5533004A - Lead material for semiconductor - Google Patents

Lead material for semiconductor

Info

Publication number
JPS5533004A
JPS5533004A JP10434378A JP10434378A JPS5533004A JP S5533004 A JPS5533004 A JP S5533004A JP 10434378 A JP10434378 A JP 10434378A JP 10434378 A JP10434378 A JP 10434378A JP S5533004 A JPS5533004 A JP S5533004A
Authority
JP
Japan
Prior art keywords
lead material
amount
kinds
weight
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10434378A
Other languages
Japanese (ja)
Inventor
Rensei Futatsuka
Akio Takahashi
Hisashi Nemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Shindoh Co Ltd
Original Assignee
Mitsubishi Shindoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Shindoh Co Ltd filed Critical Mitsubishi Shindoh Co Ltd
Priority to JP10434378A priority Critical patent/JPS5533004A/en
Publication of JPS5533004A publication Critical patent/JPS5533004A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To eliminate peeling due to oxidation in the lead material made of Cu with a heat resistibility and a softness by adding one or more kinds of Al, Mn and Si in an amount of 0.005W0.2% by weight with P exceeding no more than the content of unavoidalbe impurities.
CONSTITUTION: One or more kinds of Al, Mn and Si in an amount of 0.005W 0.2% by weight is added to a Cu lead material containing small amount of Ag, provided that P contained exceeds no more than the content of unavoidable impurities. Raw material with such a composition is cast into an ingot in a proper size which is cut on the both surfaces after a hot rolling. Then following repetition of cold rolling, medium annealling, and pickling, it is cold rolled to the final thickness to make a lead material. In this manner, after it is heated up to 450°C for 15 minutes and cooled down to a normal temperature, a bending test shows that the rate of peeling can be reduced to zero, negligible if any.
COPYRIGHT: (C)1980,JPO&Japio
JP10434378A 1978-08-29 1978-08-29 Lead material for semiconductor Pending JPS5533004A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10434378A JPS5533004A (en) 1978-08-29 1978-08-29 Lead material for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10434378A JPS5533004A (en) 1978-08-29 1978-08-29 Lead material for semiconductor

Publications (1)

Publication Number Publication Date
JPS5533004A true JPS5533004A (en) 1980-03-08

Family

ID=14378256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10434378A Pending JPS5533004A (en) 1978-08-29 1978-08-29 Lead material for semiconductor

Country Status (1)

Country Link
JP (1) JPS5533004A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130274A (en) * 1991-04-05 1992-07-14 International Business Machines Corporation Copper alloy metallurgies for VLSI interconnection structures

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