JPS5532026A - Liquid crystal display panel - Google Patents

Liquid crystal display panel

Info

Publication number
JPS5532026A
JPS5532026A JP10421078A JP10421078A JPS5532026A JP S5532026 A JPS5532026 A JP S5532026A JP 10421078 A JP10421078 A JP 10421078A JP 10421078 A JP10421078 A JP 10421078A JP S5532026 A JPS5532026 A JP S5532026A
Authority
JP
Japan
Prior art keywords
film
films
vapor deposition
sio
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10421078A
Other versions
JPS5842448B2 (en
Inventor
Minoru Hosokawa
Mitsuo Nagata
Koichi Oguchi
Satoru Yazawa
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP10421078A priority Critical patent/JPS5842448B2/ja
Publication of JPS5532026A publication Critical patent/JPS5532026A/en
Publication of JPS5842448B2 publication Critical patent/JPS5842448B2/ja
Application status is Expired legal-status Critical

Links

Abstract

PURPOSE: To increase contrast and make viewing easier by reducing the ratios occupied by the regions where diagonal vapor deposition films do not deposit owing to serrations at the time of flattening the surface of the regions where semiconductor substrate surfaces contribute to displaying and performing diagonal vapor deposition.
CONSTITUTION: An n type Si substrate 7 wherein the region encircled by alternate two long and short dashes line corresponds to one picture element is provided with p type diffused layers 8, n+ type diffused layers 9, field oxide film 10, SiO2 film 11, doped poly-Si film 12, CVD method SiO2 film 13, and Al films 14 for electrodes and wirings. Varnish form insulation layer of 1W5μ thick is coated and formed on the highly undulated surface of this semiconductor substrate, whereby a layer 21 for flattening the surface is formed. Next, through holes are provided and transparent conductive film layers 22 for liquid crystal driving are provided in connection with the films 14. Thereafter, an orientation film 20 is formed by diagonal vapor deposition of SiO.
COPYRIGHT: (C)1980,JPO&Japio
JP10421078A 1978-08-25 1978-08-25 Expired JPS5842448B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10421078A JPS5842448B2 (en) 1978-08-25 1978-08-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10421078A JPS5842448B2 (en) 1978-08-25 1978-08-25

Publications (2)

Publication Number Publication Date
JPS5532026A true JPS5532026A (en) 1980-03-06
JPS5842448B2 JPS5842448B2 (en) 1983-09-20

Family

ID=14374593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10421078A Expired JPS5842448B2 (en) 1978-08-25 1978-08-25

Country Status (1)

Country Link
JP (1) JPS5842448B2 (en)

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667884A (en) * 1979-11-09 1981-06-08 Tokyo Shibaura Electric Co Liquid crystal display element
JPS5781238A (en) * 1980-11-10 1982-05-21 Seiko Epson Corp Liquid crystal display device
JPS57104547U (en) * 1980-12-19 1982-06-28
WO1986000424A1 (en) * 1984-06-18 1986-01-16 Nissha Printing Co., Ltd. Liquid-crystal multi-color display device
JPS6468726A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor and its manufacture
US5003356A (en) * 1987-09-09 1991-03-26 Casio Computer Co., Ltd. Thin film transistor array
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US6169293B1 (en) 1995-11-17 2001-01-02 Semiconductor Energy Labs Display device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6963382B1 (en) 1995-11-17 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving same
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same

Cited By (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5667884A (en) * 1979-11-09 1981-06-08 Tokyo Shibaura Electric Co Liquid crystal display element
JPS5781238A (en) * 1980-11-10 1982-05-21 Seiko Epson Corp Liquid crystal display device
JPS57104547U (en) * 1980-12-19 1982-06-28
WO1986000424A1 (en) * 1984-06-18 1986-01-16 Nissha Printing Co., Ltd. Liquid-crystal multi-color display device
US6149988A (en) * 1986-09-26 2000-11-21 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
JPS6468726A (en) * 1987-09-09 1989-03-14 Casio Computer Co Ltd Thin film transistor and its manufacture
US5003356A (en) * 1987-09-09 1991-03-26 Casio Computer Co., Ltd. Thin film transistor array
US5055899A (en) * 1987-09-09 1991-10-08 Casio Computer Co., Ltd. Thin film transistor
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US6261856B1 (en) 1987-09-16 2001-07-17 Semiconductor Energy Laboratory Co., Ltd. Method and system of laser processing
US7423290B2 (en) 1990-11-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5905555A (en) * 1990-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix type electro-optical device having leveling film
US5899547A (en) * 1990-11-26 1999-05-04 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8026886B2 (en) 1990-11-26 2011-09-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5946059A (en) * 1990-11-26 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6618105B2 (en) 1992-03-04 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US8035773B2 (en) 1992-03-04 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7123320B2 (en) 1992-03-04 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6002101A (en) * 1992-06-26 1999-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam
US6440785B1 (en) 1992-06-26 2002-08-27 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device utilizing a laser annealing process
US5968383A (en) * 1992-06-26 1999-10-19 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus having beam expander
US6991975B1 (en) 1992-06-26 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Laser process
US7985635B2 (en) 1992-06-26 2011-07-26 Semiconductor Energy Laboratory Co., Ltd. Laser process
US6159777A (en) * 1993-02-04 2000-12-12 Semiconductor Energy Laboratory Co., Ltd. Method of forming a TFT semiconductor device
US5990491A (en) * 1994-04-29 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Active matrix device utilizing light shielding means for thin film transistors
US6800873B2 (en) 1994-04-29 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US6501097B1 (en) 1994-04-29 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7423291B2 (en) 1994-04-29 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US8319715B2 (en) 1994-04-29 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix type liquid crystal display device
US7102164B2 (en) 1994-04-29 2006-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a conductive layer with a light shielding part
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6963382B1 (en) 1995-11-17 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving same
US6867434B2 (en) 1995-11-17 2005-03-15 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display with an organic leveling layer
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
US6239470B1 (en) 1995-11-17 2001-05-29 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display thin film transistor
US6169293B1 (en) 1995-11-17 2001-01-02 Semiconductor Energy Labs Display device
US9213193B2 (en) 1995-11-17 2015-12-15 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display and method of driving
US7202551B2 (en) 1995-12-14 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Display device having underlying insulating film and insulating films
US7034381B2 (en) 1995-12-14 2006-04-25 Semiconductor Energey Laboratory Co., Ltd. Semiconductor device
US6787887B2 (en) 1995-12-14 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5990542A (en) * 1995-12-14 1999-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7750476B2 (en) 1995-12-20 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a reliable contact
US6225218B1 (en) 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US7163854B2 (en) 1996-11-07 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device
US7470580B2 (en) 1996-11-07 2008-12-30 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of a semiconductor device

Also Published As

Publication number Publication date
JPS5842448B2 (en) 1983-09-20

Similar Documents

Publication Publication Date Title
KR100920321B1 (en) Semiconductor device
KR920005538B1 (en) Amorphous silicon thin film transistor array and its manufacturing method
JP2653099B2 (en) The active matrix panel, a projection display device and viewfinder
US6566686B2 (en) Thin-film transistor display devices
US6165917A (en) Passivation of copper with ammonia-free silicon nitride and application to TFT/LCD
KR100195269B1 (en) Manufacture method of liquid crystal display device
US4933296A (en) N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
US4624737A (en) Process for producing thin-film transistor
US5995187A (en) Liquid crystal display device in-plane-switching system with counter electrode in contact with liquid crystal
JP4632522B2 (en) Method of manufacturing a reflection type liquid crystal display device
KR970011974A (en) A reflective liquid crystal display device and a method of manufacturing the same
JP2001060697A5 (en) Semiconductor device and method of manufacturing the same
JPS6045219A (en) Active matrix type display device
JPH11149091A (en) Horizontal electric field system active matrix liquid crystal display device and its manufacture
US5874326A (en) Method for fabricating thin film transistor
KR100333180B1 (en) Tft-lcd production method
JPH07166379A (en) Production of low resistance electrode used for display
GB2311653A (en) Liquid crystal display and method of manufacture
GB2197985A (en) Liquid crystal display
US5963797A (en) Method of manufacturing semiconductor devices
JPH10153796A (en) Liquid crystal display device and its manufacture
JPH10270710A (en) Liquid crystal display device and manufacture thereof
JP2002246605A (en) Method of manufacturing thin film transistor for liquid crystal display device
US6597420B2 (en) Liquid crystal display device having color film on a first substrate and a method for manufacturing the same
KR101447342B1 (en) Array substrate and manufacturing method thereof, liquid crystal panel, and display