JPS5530304B2 - - Google Patents

Info

Publication number
JPS5530304B2
JPS5530304B2 JP15936375A JP15936375A JPS5530304B2 JP S5530304 B2 JPS5530304 B2 JP S5530304B2 JP 15936375 A JP15936375 A JP 15936375A JP 15936375 A JP15936375 A JP 15936375A JP S5530304 B2 JPS5530304 B2 JP S5530304B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15936375A
Other versions
JPS5279666A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP15936375A priority Critical patent/JPS5279666A/ja
Publication of JPS5279666A publication Critical patent/JPS5279666A/ja
Publication of JPS5530304B2 publication Critical patent/JPS5530304B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
JP15936375A 1975-12-25 1975-12-25 Production of transistor Granted JPS5279666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15936375A JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15936375A JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Publications (2)

Publication Number Publication Date
JPS5279666A JPS5279666A (en) 1977-07-04
JPS5530304B2 true JPS5530304B2 (ja) 1980-08-09

Family

ID=15692195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15936375A Granted JPS5279666A (en) 1975-12-25 1975-12-25 Production of transistor

Country Status (1)

Country Link
JP (1) JPS5279666A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5635464A (en) * 1979-08-30 1981-04-08 Toshiba Corp Formation of npn type transistor
JPS58168221A (ja) * 1982-03-29 1983-10-04 Toshiba Corp 半導体装置の製造方法
JP3922337B2 (ja) * 2000-08-28 2007-05-30 サンケン電気株式会社 液状不純物源材料及びこれを使用した半導体装置の製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890473A (ja) * 1972-02-14 1973-11-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4890473A (ja) * 1972-02-14 1973-11-26

Also Published As

Publication number Publication date
JPS5279666A (en) 1977-07-04

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