JPS5527931A - Method of measuring load characteristic of high ferquency transistor - Google Patents

Method of measuring load characteristic of high ferquency transistor

Info

Publication number
JPS5527931A
JPS5527931A JP10073778A JP10073778A JPS5527931A JP S5527931 A JPS5527931 A JP S5527931A JP 10073778 A JP10073778 A JP 10073778A JP 10073778 A JP10073778 A JP 10073778A JP S5527931 A JPS5527931 A JP S5527931A
Authority
JP
Japan
Prior art keywords
transistor
terminal
impedance
reflection coefficient
load characteristic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10073778A
Other languages
Japanese (ja)
Other versions
JPS612188B2 (en
Inventor
Hiroyuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10073778A priority Critical patent/JPS5527931A/en
Publication of JPS5527931A publication Critical patent/JPS5527931A/en
Publication of JPS612188B2 publication Critical patent/JPS612188B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PURPOSE: To seek the scattered matrix of an impedance tuner on the reference of a DC bias dependency of a small signal reflection coefficient estimating a transistor thereby to make it possible to measure the load characteristic of a high frequency transistor of excellent accuracy and reproducibility.
CONSTITUTION: A small signal reflection coefficient estimating a second terminal of a transistor is measured at N-piece DC bias points in a state where the first terminal of a transistor 21 is terminated by an impedance Z1 in high frequency, the first terminal is connected to a signal source 24, the second terminal is connected to an impedance tuner 25 and further connected to a load of a reflection coefficient PL to measure the high-frequency input and output characteristics. Finally, the first terminal of the transistor 21 is terminated by an impedance Z1 22 while the transistor 21 is connected to the impedance tunner 25, and the small signal reflection coefficient estimating the transistor 21 is measured from the outside of the impedance tuner 25.
COPYRIGHT: (C)1980,JPO&Japio
JP10073778A 1978-08-17 1978-08-17 Method of measuring load characteristic of high ferquency transistor Granted JPS5527931A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10073778A JPS5527931A (en) 1978-08-17 1978-08-17 Method of measuring load characteristic of high ferquency transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10073778A JPS5527931A (en) 1978-08-17 1978-08-17 Method of measuring load characteristic of high ferquency transistor

Publications (2)

Publication Number Publication Date
JPS5527931A true JPS5527931A (en) 1980-02-28
JPS612188B2 JPS612188B2 (en) 1986-01-23

Family

ID=14281878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10073778A Granted JPS5527931A (en) 1978-08-17 1978-08-17 Method of measuring load characteristic of high ferquency transistor

Country Status (1)

Country Link
JP (1) JPS5527931A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393884U (en) * 1986-12-05 1988-06-17

Also Published As

Publication number Publication date
JPS612188B2 (en) 1986-01-23

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