JPS5586206A - Designing method for transistor amplifier - Google Patents

Designing method for transistor amplifier

Info

Publication number
JPS5586206A
JPS5586206A JP16088478A JP16088478A JPS5586206A JP S5586206 A JPS5586206 A JP S5586206A JP 16088478 A JP16088478 A JP 16088478A JP 16088478 A JP16088478 A JP 16088478A JP S5586206 A JPS5586206 A JP S5586206A
Authority
JP
Japan
Prior art keywords
parameter
signal
amplifier
frequency
designed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16088478A
Other languages
Japanese (ja)
Other versions
JPS6252962B2 (en
Inventor
Masaaki Nakatani
Yoshinobu Kadowaki
Takashi Ishii
Shigeru Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16088478A priority Critical patent/JPS5586206A/en
Publication of JPS5586206A publication Critical patent/JPS5586206A/en
Publication of JPS6252962B2 publication Critical patent/JPS6252962B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To obtain the effect similar to that when a transistor amplifier is designed by using a large-signal S parameter, by designing it on the basis of a measured small-signal S parameter, a function of a frequency when a transistor is in an unsaturated state. CONSTITUTION:A high-frequency amplifier of FET is designed by calculating characteristics from input reflection coefficient S11 as a function of a frequency, output reflection coefficient S22, input-output transfer coefficient S21, an S parameter of inverse transfer coefficient S12, and the matcher parameter of the amplifier. At this time, an operating bias point selected near point B in an unsaturated state of static characteristics expressed by drain-source voltage VDS and drain-source current IDS to measure the small-signal S parameter for designing. As a result, a high-frequency and high-output amplifier can be designed easily and accurately only by measuring the small-signal S parameter without measuring the complex large-signal S parameter.
JP16088478A 1978-12-25 1978-12-25 Designing method for transistor amplifier Granted JPS5586206A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16088478A JPS5586206A (en) 1978-12-25 1978-12-25 Designing method for transistor amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16088478A JPS5586206A (en) 1978-12-25 1978-12-25 Designing method for transistor amplifier

Publications (2)

Publication Number Publication Date
JPS5586206A true JPS5586206A (en) 1980-06-28
JPS6252962B2 JPS6252962B2 (en) 1987-11-09

Family

ID=15724443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16088478A Granted JPS5586206A (en) 1978-12-25 1978-12-25 Designing method for transistor amplifier

Country Status (1)

Country Link
JP (1) JPS5586206A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02222587A (en) * 1989-02-23 1990-09-05 Ricoh Co Ltd Manufacture of mask semiconductor laser

Also Published As

Publication number Publication date
JPS6252962B2 (en) 1987-11-09

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