JPS5526694A - Monolithic semiconductor device - Google Patents

Monolithic semiconductor device

Info

Publication number
JPS5526694A
JPS5526694A JP7746879A JP7746879A JPS5526694A JP S5526694 A JPS5526694 A JP S5526694A JP 7746879 A JP7746879 A JP 7746879A JP 7746879 A JP7746879 A JP 7746879A JP S5526694 A JPS5526694 A JP S5526694A
Authority
JP
Japan
Prior art keywords
semiconductor device
monolithic semiconductor
monolithic
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7746879A
Other languages
English (en)
Other versions
JPS6237830B2 (ja
Inventor
Aaru Shifurusu Donarudo
Dei Baanamu Robaato
Sutoreifuaa Uiriamu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of JPS5526694A publication Critical patent/JPS5526694A/ja
Publication of JPS6237830B2 publication Critical patent/JPS6237830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering
JP7746879A 1978-06-26 1979-06-19 Monolithic semiconductor device Granted JPS5526694A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/918,740 US4219785A (en) 1978-06-26 1978-06-26 Optical beam scanning by phase delays

Publications (2)

Publication Number Publication Date
JPS5526694A true JPS5526694A (en) 1980-02-26
JPS6237830B2 JPS6237830B2 (ja) 1987-08-14

Family

ID=25440879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7746879A Granted JPS5526694A (en) 1978-06-26 1979-06-19 Monolithic semiconductor device

Country Status (3)

Country Link
US (1) US4219785A (ja)
JP (1) JPS5526694A (ja)
CA (1) CA1138560A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003833A (ja) * 2008-06-19 2010-01-07 Seiko Epson Corp 発光装置
JP2010016172A (ja) * 2008-07-03 2010-01-21 Seiko Epson Corp 発光装置
JP2010192603A (ja) * 2009-02-17 2010-09-02 Seiko Epson Corp 発光装置
JP2013102205A (ja) * 2013-01-23 2013-05-23 Seiko Epson Corp 発光装置
WO2018139510A1 (ja) * 2017-01-25 2018-08-02 オリンパス株式会社 位相変調器、位相変調器の制御方法および縞投影装置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369513A (en) * 1979-11-09 1983-01-18 Hitachi, Ltd. Semiconductor laser device
US4325034A (en) * 1980-02-12 1982-04-13 Northern Telecom Limited Semiconductor lasers with integrally formed light emitting diodes
US4347612A (en) * 1980-08-25 1982-08-31 Xerox Corporation Semiconductor injection laser for high speed modulation
DE3571899D1 (en) * 1984-05-16 1989-08-31 Sharp Kk A compound resonator type semiconductor laser device
US4768201A (en) * 1984-08-06 1988-08-30 Sharp Kabushiki Kaisha Semiconductor laser array
US4671605A (en) * 1985-02-06 1987-06-09 The United States Of America As Represented By The Secretary Of The Air Force Length dependent, optical time delay/filter device for electrical signals
US4694459A (en) * 1985-05-31 1987-09-15 Xerox Corporation Hybrid gain/index guided semiconductor lasers and array lasers
US4689797A (en) * 1985-08-19 1987-08-25 Gte Laboratories Incorporated High power single spatial mode semiconductor laser
GB8605862D0 (en) * 1986-03-10 1986-04-16 British Telecomm Opto-electronic directional switch
US4751705A (en) * 1986-10-07 1988-06-14 The United States Of America As Represented By The United States Department Of Energy Single-element optical injection locking of diode-laser arrays
US4799223A (en) * 1987-08-06 1989-01-17 Xerox Corporation Split contact phased array lasers
US4859846A (en) * 1988-07-21 1989-08-22 Burrer Gordon J Dual-mode resonant scanning system
US4940303A (en) * 1988-10-28 1990-07-10 Bell Communications Research, Inc. Optical system comprising non-uniformly spaced array of parallel optical waveguide elements
US5023882A (en) * 1990-05-07 1991-06-11 Xerox Corporation Phased locked arrays with single lobe output beam
US5058121A (en) * 1990-06-13 1991-10-15 Xerox Corporation Coupling structures for a phase-locked laser array
US5047630A (en) * 1990-08-22 1991-09-10 Confer Charles L Modified dual-mode resonant scanning system
US5533042A (en) * 1993-10-12 1996-07-02 Fuji Xerox Co., Ltd. Semiconductor laser device and driving method for the same as well as tracking servo system employing the same
US6956998B2 (en) * 2002-08-22 2005-10-18 Prima Luci, Inc. Compact optical delay lines
US20180307063A1 (en) * 2017-04-19 2018-10-25 Macom Technology Solutions Holdings, Inc. Far field spatial modulation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436679A (en) * 1966-03-07 1969-04-01 Gen Electric Semiconductor junction laser with electronically displaceable and deflectable beam
US3626321A (en) * 1968-11-13 1971-12-07 Ibm Optical scanner and method for optical scanning
US3691483A (en) * 1970-02-09 1972-09-12 Klein Aaron D Phased array laser source
US3701044A (en) * 1970-06-29 1972-10-24 Bell Telephone Labor Inc Optical coupling of adjacent stripe contact geometry semiconductor lasers
US4159452A (en) * 1978-01-13 1979-06-26 Bell Telephone Laboratories, Incorporated Dual beam double cavity heterostructure laser with branching output waveguides

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010003833A (ja) * 2008-06-19 2010-01-07 Seiko Epson Corp 発光装置
JP2010016172A (ja) * 2008-07-03 2010-01-21 Seiko Epson Corp 発光装置
JP2010192603A (ja) * 2009-02-17 2010-09-02 Seiko Epson Corp 発光装置
JP2013102205A (ja) * 2013-01-23 2013-05-23 Seiko Epson Corp 発光装置
WO2018139510A1 (ja) * 2017-01-25 2018-08-02 オリンパス株式会社 位相変調器、位相変調器の制御方法および縞投影装置
JP2018120101A (ja) * 2017-01-25 2018-08-02 オリンパス株式会社 位相変調器、位相変調器の制御方法および縞投影装置
US11002995B2 (en) 2017-01-25 2021-05-11 Olympus Corporation Phase modulator, control method for phase modulator, and fringe projector apparatus

Also Published As

Publication number Publication date
CA1138560A (en) 1982-12-28
US4219785A (en) 1980-08-26
JPS6237830B2 (ja) 1987-08-14

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