JPS5525831A - Nagnetic bubble element - Google Patents

Nagnetic bubble element

Info

Publication number
JPS5525831A
JPS5525831A JP9766578A JP9766578A JPS5525831A JP S5525831 A JPS5525831 A JP S5525831A JP 9766578 A JP9766578 A JP 9766578A JP 9766578 A JP9766578 A JP 9766578A JP S5525831 A JPS5525831 A JP S5525831A
Authority
JP
Japan
Prior art keywords
bubble
film
transfer pattern
stage error
error
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9766578A
Other languages
Japanese (ja)
Other versions
JPS6048068B2 (en
Inventor
Naotake Orihara
Seiichi Iwasa
Takeyasu Yanase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9766578A priority Critical patent/JPS6048068B2/en
Publication of JPS5525831A publication Critical patent/JPS5525831A/en
Publication of JPS6048068B2 publication Critical patent/JPS6048068B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To realize a simple constitution for the bubble element which excels in the gap tolerance of the transfer pattern and is suited for the microprocessing by providing the stage error part to the bubble meterial magnetic film and then distributing the transfer pattern on the stage error part.
CONSTITUTION: Bubble-use magnetic film 1 featuring the single-axis anisotropy is grown by the liquid-phase epitaxial method onto single-crystalsubstrate 2 such as the Gd. Ga garnet or the like. In this case, part 11 of film 1 is formed thin with part 12 formed thick each, and stage error 13 is provided between 11 and 12. Then spacer layer 3 of SiO and the like is coated over film 1, and circular transfer pattern 4 is arranged in plural number on layer 3 to be positioned on error 13 and with the same space between. As a result, the potential of the magnetic field varies suddenly at stage error 13, and accordingly bubble 5 cannot intrude into thick film part 12 getting over the high potential part even though it receives the suction force from the suction pole piece of the transfer pattern, and thus has to stay at the low potential part.
COPYRIGHT: (C)1980,JPO&Japio
JP9766578A 1978-08-10 1978-08-10 magnetic bubble element Expired JPS6048068B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9766578A JPS6048068B2 (en) 1978-08-10 1978-08-10 magnetic bubble element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9766578A JPS6048068B2 (en) 1978-08-10 1978-08-10 magnetic bubble element

Publications (2)

Publication Number Publication Date
JPS5525831A true JPS5525831A (en) 1980-02-23
JPS6048068B2 JPS6048068B2 (en) 1985-10-25

Family

ID=14198336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9766578A Expired JPS6048068B2 (en) 1978-08-10 1978-08-10 magnetic bubble element

Country Status (1)

Country Link
JP (1) JPS6048068B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578775A (en) * 1982-06-16 1986-03-25 Hitachi, Ltd. Magnetic bubble memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578775A (en) * 1982-06-16 1986-03-25 Hitachi, Ltd. Magnetic bubble memory device

Also Published As

Publication number Publication date
JPS6048068B2 (en) 1985-10-25

Similar Documents

Publication Publication Date Title
JPS527204A (en) Magnetic recording medium manufacturing method
JPS52115000A (en) Material of permanent magnet
JPS5525831A (en) Nagnetic bubble element
JPS5321903A (en) Preparation of magnetic disc substrate
JPS5797705A (en) Reflective mirror antenna device
JPS5634143A (en) Magnetic recording medium
JPS5659695A (en) Manufacture of oxide epitaxial film
JPS57205398A (en) Liquid phase epitaxial garnet film
JPS54156200A (en) Magnetic bubble element
JPS548938A (en) Forming method of magnetic bubble transfer path
JPS5312352A (en) Pen for recorder
JPS52113216A (en) Magnetic head
JPS5236798A (en) Magnetic recording substance
JPS53130974A (en) Manufacture for silicon thin film
JPS52122054A (en) Magnetic babble driving coil
JPS534460A (en) Magnetron
JPS5284706A (en) Production of magnetic recording medium
JPS5243403A (en) Magnetic recording media
JPS5518095A (en) Cilindrical magnetic domain element
JPS51135464A (en) Semi-conductor crystal producing system
JPS51140437A (en) Method of fabricating magnetic bubble element magnetic thin film by li quidus epitaxial growth
JPS52119241A (en) Production of optical picture converting element
JPS51120260A (en) Magnetic oscillation type gradio-meter
JPS5337405A (en) Thin film magnetic head and its manufacture
JPS5332899A (en) Production of ferrite single crystal