JPS5521277A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS5521277A JPS5521277A JP9494978A JP9494978A JPS5521277A JP S5521277 A JPS5521277 A JP S5521277A JP 9494978 A JP9494978 A JP 9494978A JP 9494978 A JP9494978 A JP 9494978A JP S5521277 A JPS5521277 A JP S5521277A
- Authority
- JP
- Japan
- Prior art keywords
- heat generation
- resistance layer
- heat
- generation resistance
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
PURPOSE:To prevnet variations in exothermic characteristics due to generation of heat, by provding a heat generation resistance layer consisting of polycrystalline silicone. CONSTITUTION:In order to form a heat generation resistance layer 13 with polycrystalline silicone, a substrate 1 is placed in an ordinary gas phase growth device by, for example, CVD method, which substrate 1 is provided thereon with a heat strage layer 2 only and with no heat generation resistance layer 13, electrodes 4, 5 and protective layer 6. Silane SiH4 is introduced into the growth device by using a carrier gas consisting of hydrogen or helium while maintaining the temperature of the substrate 1 at 700-1000 deg.C. The silane SiH4 is thermally decomposed to form a desired shape of heat generation resistance layer 13. The heat generation resistance layer 13 may be formed to a desired thickness and shape and to a predetermined resistance value by sputtering or evaporation. The exothermic characteristics never vary due to heat generated by the heat generation resistance layer 13 itself.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9494978A JPS5521277A (en) | 1978-08-02 | 1978-08-02 | Thermal head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9494978A JPS5521277A (en) | 1978-08-02 | 1978-08-02 | Thermal head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5521277A true JPS5521277A (en) | 1980-02-15 |
JPS6317629B2 JPS6317629B2 (en) | 1988-04-14 |
Family
ID=14124184
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9494978A Granted JPS5521277A (en) | 1978-08-02 | 1978-08-02 | Thermal head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5521277A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59133079A (en) * | 1983-01-19 | 1984-07-31 | Hitachi Ltd | Heat-sensitive head |
-
1978
- 1978-08-02 JP JP9494978A patent/JPS5521277A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59133079A (en) * | 1983-01-19 | 1984-07-31 | Hitachi Ltd | Heat-sensitive head |
JPH0134156B2 (en) * | 1983-01-19 | 1989-07-18 | Hitachi Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6317629B2 (en) | 1988-04-14 |
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