JPS5521179A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5521179A JPS5521179A JP9523378A JP9523378A JPS5521179A JP S5521179 A JPS5521179 A JP S5521179A JP 9523378 A JP9523378 A JP 9523378A JP 9523378 A JP9523378 A JP 9523378A JP S5521179 A JPS5521179 A JP S5521179A
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- npn
- current
- collector
- increased
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To shorten a writing time to a memory cell by removing a n+-type buried layer disposed previously in the under face of a npn transistor connected to a bit line.
CONSTITUTION: A series resistance rc of a collector is increased from a normal level of 100Ω to 500Ω about by removing a bury layer under a transistor Q5 and Q6. Therefore, the current over 1mA is applied to the transistor Q5 or Q6, the voltage drop due to the collector resistance rc is increased over 500mV, the npn trnasistor Q5 or Q6 is fully saturated, therefore, an amplification rate βd of an emitter earth current would be remarkably reduced. Depending on this phenomenon, an inversion time can be shortened. In the reading, it can be established at a high speed because the current passing through the npn transistor Q5 and Q6 is as much as 100μA.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9523378A JPS5521179A (en) | 1978-08-03 | 1978-08-03 | Semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9523378A JPS5521179A (en) | 1978-08-03 | 1978-08-03 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5521179A true JPS5521179A (en) | 1980-02-15 |
JPS6138621B2 JPS6138621B2 (en) | 1986-08-30 |
Family
ID=14132033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9523378A Granted JPS5521179A (en) | 1978-08-03 | 1978-08-03 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5521179A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104468A (en) * | 1986-10-22 | 1988-05-09 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1978
- 1978-08-03 JP JP9523378A patent/JPS5521179A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104468A (en) * | 1986-10-22 | 1988-05-09 | Hitachi Ltd | Semiconductor integrated circuit device |
Also Published As
Publication number | Publication date |
---|---|
JPS6138621B2 (en) | 1986-08-30 |
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