JPS5521179A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5521179A
JPS5521179A JP9523378A JP9523378A JPS5521179A JP S5521179 A JPS5521179 A JP S5521179A JP 9523378 A JP9523378 A JP 9523378A JP 9523378 A JP9523378 A JP 9523378A JP S5521179 A JPS5521179 A JP S5521179A
Authority
JP
Japan
Prior art keywords
transistor
npn
current
collector
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9523378A
Other languages
Japanese (ja)
Other versions
JPS6138621B2 (en
Inventor
Kenji Murakami
Shuichi Kato
Masahiro Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9523378A priority Critical patent/JPS5521179A/en
Publication of JPS5521179A publication Critical patent/JPS5521179A/en
Publication of JPS6138621B2 publication Critical patent/JPS6138621B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To shorten a writing time to a memory cell by removing a n+-type buried layer disposed previously in the under face of a npn transistor connected to a bit line.
CONSTITUTION: A series resistance rc of a collector is increased from a normal level of 100Ω to 500Ω about by removing a bury layer under a transistor Q5 and Q6. Therefore, the current over 1mA is applied to the transistor Q5 or Q6, the voltage drop due to the collector resistance rc is increased over 500mV, the npn trnasistor Q5 or Q6 is fully saturated, therefore, an amplification rate βd of an emitter earth current would be remarkably reduced. Depending on this phenomenon, an inversion time can be shortened. In the reading, it can be established at a high speed because the current passing through the npn transistor Q5 and Q6 is as much as 100μA.
COPYRIGHT: (C)1980,JPO&Japio
JP9523378A 1978-08-03 1978-08-03 Semiconductor memory Granted JPS5521179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9523378A JPS5521179A (en) 1978-08-03 1978-08-03 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9523378A JPS5521179A (en) 1978-08-03 1978-08-03 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5521179A true JPS5521179A (en) 1980-02-15
JPS6138621B2 JPS6138621B2 (en) 1986-08-30

Family

ID=14132033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9523378A Granted JPS5521179A (en) 1978-08-03 1978-08-03 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5521179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104468A (en) * 1986-10-22 1988-05-09 Hitachi Ltd Semiconductor integrated circuit device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63104468A (en) * 1986-10-22 1988-05-09 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6138621B2 (en) 1986-08-30

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