JPS551706B2 - - Google Patents

Info

Publication number
JPS551706B2
JPS551706B2 JP8327072A JP8327072A JPS551706B2 JP S551706 B2 JPS551706 B2 JP S551706B2 JP 8327072 A JP8327072 A JP 8327072A JP 8327072 A JP8327072 A JP 8327072A JP S551706 B2 JPS551706 B2 JP S551706B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8327072A
Other languages
Japanese (ja)
Other versions
JPS4830885A (US06633600-20031014-M00021.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4830885A publication Critical patent/JPS4830885A/ja
Publication of JPS551706B2 publication Critical patent/JPS551706B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP8327072A 1971-08-19 1972-08-18 Expired JPS551706B2 (US06633600-20031014-M00021.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141627A DE2141627C3 (de) 1971-08-19 1971-08-19 Thyristor

Publications (2)

Publication Number Publication Date
JPS4830885A JPS4830885A (US06633600-20031014-M00021.png) 1973-04-23
JPS551706B2 true JPS551706B2 (US06633600-20031014-M00021.png) 1980-01-16

Family

ID=5817211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8327072A Expired JPS551706B2 (US06633600-20031014-M00021.png) 1971-08-19 1972-08-18

Country Status (9)

Country Link
US (1) US3771029A (US06633600-20031014-M00021.png)
JP (1) JPS551706B2 (US06633600-20031014-M00021.png)
CH (1) CH542516A (US06633600-20031014-M00021.png)
DE (1) DE2141627C3 (US06633600-20031014-M00021.png)
FR (1) FR2149486B1 (US06633600-20031014-M00021.png)
GB (1) GB1344605A (US06633600-20031014-M00021.png)
IT (1) IT964544B (US06633600-20031014-M00021.png)
NL (1) NL7209354A (US06633600-20031014-M00021.png)
SE (1) SE372660B (US06633600-20031014-M00021.png)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110176U (US06633600-20031014-M00021.png) * 1984-12-24 1986-07-12
JPH0528788B2 (US06633600-20031014-M00021.png) * 1985-10-18 1993-04-27 Yaskawa Electric Corp

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083063A (en) * 1973-10-09 1978-04-04 General Electric Company Gate turnoff thyristor with a pilot scr
JPS586312B2 (ja) * 1975-04-04 1983-02-03 三菱電機株式会社 ハンドウタイセイギヨソウチ
JPS522304A (en) * 1975-06-24 1977-01-10 Kokusai Electric Co Ltd Data transmitting system
DE2534703C3 (de) * 1975-08-04 1980-03-06 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4047219A (en) * 1975-11-03 1977-09-06 General Electric Company Radiation sensitive thyristor structure with isolated detector
JPS583388B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
JPS583387B2 (ja) * 1975-12-29 1983-01-21 三菱電機株式会社 ハンドウタイソウチ
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
US4079403A (en) * 1976-11-01 1978-03-14 Electric Power Research Institute, Inc. Thyristor device with self-protection against breakover turn-on failure
IE861474L (en) * 1985-06-20 1986-12-20 Tsnii Kozhevenno Obuvnoi Ptomy Temperature stable self-protected thyristor and method of¹producing
FR2586141B1 (fr) * 1985-08-06 1987-11-20 Thomson Csf Thyristor sensible a decouplage gachette-cathode integre
DE4403429C2 (de) * 1994-02-04 1997-09-18 Asea Brown Boveri Abschaltbares Halbleiterbauelement

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3124703A (en) * 1960-06-13 1964-03-10 Figure
CH472119A (de) * 1964-11-28 1969-04-30 Licentia Gmbh Steuerbarer Halbleitergleichrichter
GB1174899A (en) * 1966-04-15 1969-12-17 Westinghouse Brake & Signal Improvements relating to Controllable Rectifier Devices
SE335389B (US06633600-20031014-M00021.png) * 1966-10-25 1971-05-24 Asea Ab
US3549961A (en) * 1968-06-19 1970-12-22 Int Rectifier Corp Triac structure and method of manufacture
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3586932A (en) * 1969-12-12 1971-06-22 Gen Electric Five layer gate controlled thyristor with novel turn on characteristics
US3611066A (en) * 1969-12-12 1971-10-05 Gen Electric Thyristor with integrated ballasted gate auxiliary thyristor portion

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61110176U (US06633600-20031014-M00021.png) * 1984-12-24 1986-07-12
JPH0528788B2 (US06633600-20031014-M00021.png) * 1985-10-18 1993-04-27 Yaskawa Electric Corp

Also Published As

Publication number Publication date
IT964544B (it) 1974-01-31
CH542516A (de) 1973-09-30
JPS4830885A (US06633600-20031014-M00021.png) 1973-04-23
NL7209354A (US06633600-20031014-M00021.png) 1973-02-21
FR2149486A1 (US06633600-20031014-M00021.png) 1973-03-30
DE2141627C3 (de) 1979-06-13
SE372660B (US06633600-20031014-M00021.png) 1974-12-23
GB1344605A (en) 1974-01-23
US3771029A (en) 1973-11-06
DE2141627A1 (de) 1973-02-22
FR2149486B1 (US06633600-20031014-M00021.png) 1977-04-01
DE2141627B2 (US06633600-20031014-M00021.png) 1978-10-12

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