JPS551700B2 - - Google Patents
Info
- Publication number
- JPS551700B2 JPS551700B2 JP5268073A JP5268073A JPS551700B2 JP S551700 B2 JPS551700 B2 JP S551700B2 JP 5268073 A JP5268073 A JP 5268073A JP 5268073 A JP5268073 A JP 5268073A JP S551700 B2 JPS551700 B2 JP S551700B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722223868 DE2223868C3 (de) | 1972-05-16 | 1972-05-16 | Verfahren und Vorrichtung zum Herstellen von aus Halbleitermaterial bestehenden Hohlkörpern, insbesondere von Siliciumrohren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4950865A JPS4950865A (xx) | 1974-05-17 |
| JPS551700B2 true JPS551700B2 (xx) | 1980-01-16 |
Family
ID=5845030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5268073A Expired JPS551700B2 (xx) | 1972-05-16 | 1973-05-14 |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS551700B2 (xx) |
| BE (1) | BE789719A (xx) |
| CA (1) | CA996844A (xx) |
| CS (1) | CS171283B2 (xx) |
| DD (1) | DD104029A5 (xx) |
| DE (1) | DE2223868C3 (xx) |
| GB (1) | GB1392142A (xx) |
| IT (1) | IT987169B (xx) |
| NL (1) | NL7217452A (xx) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008535758A (ja) * | 2005-04-10 | 2008-09-04 | アールイーシー シリコン インコーポレイテッド | 多結晶シリコンの製造 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1917016B2 (de) * | 1969-04-02 | 1972-01-05 | Siemens AG, 1000 Berlin u. 8000 München | Verfahren zur herstellung von hohlkoerpern aus halbleiter material |
| DE2022025C3 (de) * | 1970-05-05 | 1980-03-20 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Herstellen eines Hohlkörpers aus Halbleitermaterial |
-
0
- BE BE789719D patent/BE789719A/xx unknown
-
1972
- 1972-05-16 DE DE19722223868 patent/DE2223868C3/de not_active Expired
- 1972-12-21 NL NL7217452A patent/NL7217452A/xx unknown
-
1973
- 1973-02-16 GB GB765673A patent/GB1392142A/en not_active Expired
- 1973-04-13 CA CA168,722A patent/CA996844A/en not_active Expired
- 1973-05-08 IT IT2380573A patent/IT987169B/it active
- 1973-05-11 DD DD17077773A patent/DD104029A5/xx unknown
- 1973-05-14 CS CS341573A patent/CS171283B2/cs unknown
- 1973-05-14 JP JP5268073A patent/JPS551700B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA996844A (en) | 1976-09-14 |
| CS171283B2 (xx) | 1976-10-29 |
| IT987169B (it) | 1975-02-20 |
| DE2223868A1 (de) | 1973-11-29 |
| JPS4950865A (xx) | 1974-05-17 |
| DE2223868C3 (de) | 1981-06-19 |
| DD104029A5 (xx) | 1974-02-20 |
| BE789719A (fr) | 1973-02-01 |
| NL7217452A (xx) | 1973-11-20 |
| DE2223868B2 (de) | 1980-09-04 |
| GB1392142A (en) | 1975-04-30 |