JPS55167119A - Amorphous silicon fine powder - Google Patents
Amorphous silicon fine powderInfo
- Publication number
- JPS55167119A JPS55167119A JP7455479A JP7455479A JPS55167119A JP S55167119 A JPS55167119 A JP S55167119A JP 7455479 A JP7455479 A JP 7455479A JP 7455479 A JP7455479 A JP 7455479A JP S55167119 A JPS55167119 A JP S55167119A
- Authority
- JP
- Japan
- Prior art keywords
- silane
- specified
- amorphous silicon
- derivative
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the titled powder having specified absorbance peaks on its infrared absorption spectrum, a specified spin density in electron-spin resonance absorption and a specified particle size of the primary particles by using silane (derivative) as starting material in a vapor phase of negative pressure and discharge-decomposing it in an electric field.
CONSTITUTION: Silane (derivative) such as disilane or silane halide is used as starting material in a vapor phase of negative pressure and discharge-decomposed in an electric field to obtain amorphous silicon powder having superior photoelectric characteristics and the following characteristics: it is composed of Si and H, the ratio of absorbance peaks of 2,000cm-1 and 630cm-1 on its infrared absorption spectrum becomes 0.1 or more when the 630cm-1 peak is used as the denominator, the spin density in electron-spin resonance absorption is 1018cm-3 or less, and the particle size of the primary particles is 0.01W1μm.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7455479A JPS55167119A (en) | 1979-06-15 | 1979-06-15 | Amorphous silicon fine powder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7455479A JPS55167119A (en) | 1979-06-15 | 1979-06-15 | Amorphous silicon fine powder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55167119A true JPS55167119A (en) | 1980-12-26 |
| JPH0123409B2 JPH0123409B2 (en) | 1989-05-02 |
Family
ID=13550562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7455479A Granted JPS55167119A (en) | 1979-06-15 | 1979-06-15 | Amorphous silicon fine powder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55167119A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021501733A (en) * | 2017-11-07 | 2021-01-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | A method for producing a hydride amorphous silicon-containing colloid and / or a composite colloid, a method for encapsulating a substance using the hydride amorphous silicon-containing composite colloid, and a method for producing a hydride amorphous silicon-containing colloid and / or a composite colloid and a silicon-containing composite layer. Substances encapsulated using and their use |
-
1979
- 1979-06-15 JP JP7455479A patent/JPS55167119A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021501733A (en) * | 2017-11-07 | 2021-01-21 | フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | A method for producing a hydride amorphous silicon-containing colloid and / or a composite colloid, a method for encapsulating a substance using the hydride amorphous silicon-containing composite colloid, and a method for producing a hydride amorphous silicon-containing colloid and / or a composite colloid and a silicon-containing composite layer. Substances encapsulated using and their use |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0123409B2 (en) | 1989-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57160174A (en) | Thin film solar battery | |
| JPS5360979A (en) | Polytetrafluoroethylene fine powder and its preparation | |
| JPS55167119A (en) | Amorphous silicon fine powder | |
| JPS56129423A (en) | Triangle wave generating circuit | |
| JPS55167120A (en) | Manufacture of amorphous silicon fine powder | |
| JPS5696717A (en) | Production of fine powder of amorphous silicon | |
| JPS5388198A (en) | Complex dielectric for capacitor | |
| JPS5585082A (en) | Optical semiconductor apparatus | |
| JPS5686952A (en) | Insulating sheet for agriculture | |
| JPS52133167A (en) | Vibration pulverizer | |
| JPS5641284A (en) | Use of crystalline schist such as sericite schist, chlorite schist, amphibole schist and chlorite-amphibole schist, as reinforcing material for composite material | |
| JPS56110406A (en) | Filter device for electric vehicle | |
| JPS52137281A (en) | Device for adjusting position at which photo electric converting element is mounted | |
| JPS5669216A (en) | Preparation of noncrystalline silicone | |
| JPS57135704A (en) | Preparation of crystalline silicon nitride powder | |
| Zil'berman | The Effect of Plastic Deformation on the Koster Peak | |
| JPS548401A (en) | Variable tuning circuit | |
| Watanabe et al. | Properties of amorphous films prepared from SiH sub (4)-N sub (2)-H sub (2) gas mixture. | |
| Isipova et al. | Silicon Nitride Powder Recrystallization at Hot Pressing | |
| JPS5692543A (en) | Preparation of electrophotographic receptor | |
| JPS5328369A (en) | X- ray video redoubling device | |
| JPS6488462A (en) | Amorphous silicon type photoconductor | |
| JPS5235902A (en) | Turret type tv tuner unit | |
| JPS5582172A (en) | Resistance paint composed of carbon and resin | |
| JPS53131991A (en) | Method of fabricating granular liquid waste treating material |