JPS5669216A - Preparation of noncrystalline silicone - Google Patents

Preparation of noncrystalline silicone

Info

Publication number
JPS5669216A
JPS5669216A JP14415679A JP14415679A JPS5669216A JP S5669216 A JPS5669216 A JP S5669216A JP 14415679 A JP14415679 A JP 14415679A JP 14415679 A JP14415679 A JP 14415679A JP S5669216 A JPS5669216 A JP S5669216A
Authority
JP
Japan
Prior art keywords
discharge
silane
vacuum
noncrystalline
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14415679A
Other languages
Japanese (ja)
Other versions
JPS5933531B2 (en
Inventor
Masatoshi Tabei
Kazuhiro Kawajiri
Akio Azuma
Mitsuru Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP14415679A priority Critical patent/JPS5933531B2/en
Publication of JPS5669216A publication Critical patent/JPS5669216A/en
Publication of JPS5933531B2 publication Critical patent/JPS5933531B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To prepare efficiently finely divided particles of noncrystalline silicone having improved photoelectric properties, by introducing a silane (derivative)- containing gas into a vacuum reactor, subjecting it to discharge decomposition in an electric field under specific conditions. CONSTITUTION:A silane (SiH4) or silane derivative (disilane, chlorosilane, etc.)- containing gas introduced into a vacuum reactor is subjected to discharge decomposition with a gas temperature and discharge energy in the reactor maintained in such a way that the produce of the distance between the discharge pillar in the direction of the electric field and the degree of vacuum is 0.1-500 Torr cm, the prepared finely divided partices have a ratio of an absorption peak of infrared absorption spectrum at 2,000cm<-1> to that at 630<-1> not less than 0.06 and a spin concentration in electron spin resonance absorption is made not more than 10<18>cm<-8>. The gas temperature and discharge energy are set by selecting their values from ranges normal temperature to about 450 deg.C and 30 - above 150W respectively.
JP14415679A 1979-11-06 1979-11-06 Method for producing amorphous silicon fine powder Expired JPS5933531B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14415679A JPS5933531B2 (en) 1979-11-06 1979-11-06 Method for producing amorphous silicon fine powder

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14415679A JPS5933531B2 (en) 1979-11-06 1979-11-06 Method for producing amorphous silicon fine powder

Publications (2)

Publication Number Publication Date
JPS5669216A true JPS5669216A (en) 1981-06-10
JPS5933531B2 JPS5933531B2 (en) 1984-08-16

Family

ID=15355498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14415679A Expired JPS5933531B2 (en) 1979-11-06 1979-11-06 Method for producing amorphous silicon fine powder

Country Status (1)

Country Link
JP (1) JPS5933531B2 (en)

Also Published As

Publication number Publication date
JPS5933531B2 (en) 1984-08-16

Similar Documents

Publication Publication Date Title
Hollahan et al. Hydroxylation of polymethylsiloxane surfaces by oxidizing plasmas
US4968384A (en) Method of producing carbon-doped amorphous silicon thin film
Taniguchi et al. Novel effects of magnetic field on the silane glow discharge
US5397737A (en) Deposition of device quality low H content, amorphous silicon films
ATE27186T1 (en) PROCESSES FOR THE PRODUCTION OF AMORPHOUS SEMICONDUCTING ALLOYS AND ARRANGEMENTS BY MICROWAVE ENERGY.
Catherine et al. Reaction mechanisms in plasma deposition of SixC1-x: H films
Operti et al. Investigation of the complex reactions of SiH4 and GeH4 in the ion trap using dynamically programmed scanning
Perrin et al. Effect of ion bombardment on the growth and properties of hydrogenated amorphous silicon-germanium alloys
JPS5669216A (en) Preparation of noncrystalline silicone
Mukashev et al. New infra-red absorption bands in hydrogen-implanted silicon
JPS5591885A (en) Amorphous silicon hydride photoconductive layer
JPS56107551A (en) Amorphous semiconductor having chemical modification
Perrin Deposition of amorphous silicon alloys
Kalem et al. Infrared spectroscopy of hydrogenated and chlorinated amorphous silicon
Simon et al. Thermal dissociation of disilane: quadrupole mass spectrometry investigation
Meiling et al. The influence of electrode shape and hydrogen dilution of SiH4 on the optical properties of glow-discharge hydrogenated amorphous silicon
JPS5735937A (en) Plasma chemical reaction method
SHIOKAWA et al. Etching of Si by Silane Ion Beam
JPS57122445A (en) Copying machine
Tarui et al. Photochemical Vapor Deposition of Amorphous Silicon Using Mercury Photosensitization of Disilane
JPS56155528A (en) Method of diffusing impurity into semiconductor substrate
JPS5799649A (en) Electrophotographic receptor
Godet et al. Defect Equilibration in Amorphous Silicon Films Submitted to High Intensity Illumination
CN116669408A (en) ABX (ABX) 3 Perovskite type composite electromagnetic wave absorbing material and preparation method thereof
JPS6461907A (en) Formation of amorphous semiconductor alloy