JPS55167117A - Diamond sintered body having crystal grain arranged in specified direction and its manufacture - Google Patents

Diamond sintered body having crystal grain arranged in specified direction and its manufacture

Info

Publication number
JPS55167117A
JPS55167117A JP7367079A JP7367079A JPS55167117A JP S55167117 A JPS55167117 A JP S55167117A JP 7367079 A JP7367079 A JP 7367079A JP 7367079 A JP7367079 A JP 7367079A JP S55167117 A JPS55167117 A JP S55167117A
Authority
JP
Japan
Prior art keywords
diamond
temp
sintered body
crystal grain
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7367079A
Other languages
Japanese (ja)
Other versions
JPS6049153B2 (en
Inventor
Kazuo Tsuji
Shuji Yatsu
Akio Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP54073670A priority Critical patent/JPS6049153B2/en
Priority to US06/158,136 priority patent/US4333986A/en
Publication of JPS55167117A publication Critical patent/JPS55167117A/en
Priority to US06/352,248 priority patent/US4425315A/en
Priority to US06/352,249 priority patent/US4412980A/en
Publication of JPS6049153B2 publication Critical patent/JPS6049153B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/062—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/0685—Crystal sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

PURPOSE:To restrict the minor to major axial length ratio of each crystal grain of a diamond sintered body by laminating a carbonaceous substance and a catalyst metal or placing them concentrically, interposing a metal inert to diamond synthesis between them, and maintaining specified temp. and pressure conditions. CONSTITUTION:Graphite discs 7, 7' and catalyst metal disc 8 are laminated with metal 9, 9' such as Au inert to diamond synthesis in-between. This leminate 6 is put in reaction chamber 5 composed of graphite heater 1, graphite end plates 2, 2', BN discs 3, 3' and BN cylinder 4, and it is maintained at a pressure of 65kb or above and a temp. 200 deg.C above the eutectic temp. of the catalyst metal and C to a temp. 100 deg.C below the thermodynamic equilibrium line of diamond and greaphite for an enough time to grow and sinter diamond crystals. Thus, a diamond sintered body is obtd. The major to minor axial length ratio of each grain of the body is 2 or more, and the major axial directions of most of the grains are arranged in a certain specified direction.
JP54073670A 1979-06-11 1979-06-11 Diamond sintered body with crystal grains arranged in a specific direction and its manufacturing method Expired JPS6049153B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP54073670A JPS6049153B2 (en) 1979-06-11 1979-06-11 Diamond sintered body with crystal grains arranged in a specific direction and its manufacturing method
US06/158,136 US4333986A (en) 1979-06-11 1980-06-10 Diamond sintered compact wherein crystal particles are uniformly orientated in a particular direction and a method for producing the same
US06/352,248 US4425315A (en) 1979-06-11 1982-02-25 Diamond sintered compact wherein crystal particles are uniformly orientated in the particular direction and the method for producing the same
US06/352,249 US4412980A (en) 1979-06-11 1982-02-25 Method for producing a diamond sintered compact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54073670A JPS6049153B2 (en) 1979-06-11 1979-06-11 Diamond sintered body with crystal grains arranged in a specific direction and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS55167117A true JPS55167117A (en) 1980-12-26
JPS6049153B2 JPS6049153B2 (en) 1985-10-31

Family

ID=13524901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54073670A Expired JPS6049153B2 (en) 1979-06-11 1979-06-11 Diamond sintered body with crystal grains arranged in a specific direction and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6049153B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6176534A (en) * 1984-09-21 1986-04-19 Toa Nenryo Kogyo Kk Polyethylene film
JP2007248136A (en) * 2006-03-14 2007-09-27 Hitachi Ltd Thermal gas flow rate measuring device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6176534A (en) * 1984-09-21 1986-04-19 Toa Nenryo Kogyo Kk Polyethylene film
JPH038659B2 (en) * 1984-09-21 1991-02-06 Tonen Kk
JP2007248136A (en) * 2006-03-14 2007-09-27 Hitachi Ltd Thermal gas flow rate measuring device

Also Published As

Publication number Publication date
JPS6049153B2 (en) 1985-10-31

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