JPS55163957A - Driving method for electric charge transfer device - Google Patents

Driving method for electric charge transfer device

Info

Publication number
JPS55163957A
JPS55163957A JP7201679A JP7201679A JPS55163957A JP S55163957 A JPS55163957 A JP S55163957A JP 7201679 A JP7201679 A JP 7201679A JP 7201679 A JP7201679 A JP 7201679A JP S55163957 A JPS55163957 A JP S55163957A
Authority
JP
Japan
Prior art keywords
register
charges
horizontal register
vertical
horizontal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7201679A
Other languages
Japanese (ja)
Other versions
JPH0150156B2 (en
Inventor
Hiromitsu Shiraki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7201679A priority Critical patent/JPS55163957A/en
Publication of JPS55163957A publication Critical patent/JPS55163957A/en
Publication of JPH0150156B2 publication Critical patent/JPH0150156B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To make it possible to reduce blooming and smears by transferring residual charges in a vertical register to a horizontal register in a blanking interval and further extracting them from the horizontal register. CONSTITUTION:In a vertical blanking interval, transfer gate 103 is placed in an OFF state, and transfer electrode 202 of horizontal register 203 opposing to vertical shift register 108 in an ON state to transfer charges from vertical register 108 to horizontal register 203. Next, charges are sent to output method 204 by driving horizontal register 203 to clear residual charges in vertical register 108. When charges are great in number, charges for a random number of stages in vertical register 108 are transferred to horizontal register 203, without causing horizontal register 203 to overflow, and temporarily sent to an output terminal, and horizontal register 203 is driven as many as the random number of stages to transfer the residual charges to horizontal register 203 before transfer to output method 204. Thus, blooming and smears can be reduced to half.
JP7201679A 1979-06-08 1979-06-08 Driving method for electric charge transfer device Granted JPS55163957A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7201679A JPS55163957A (en) 1979-06-08 1979-06-08 Driving method for electric charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7201679A JPS55163957A (en) 1979-06-08 1979-06-08 Driving method for electric charge transfer device

Publications (2)

Publication Number Publication Date
JPS55163957A true JPS55163957A (en) 1980-12-20
JPH0150156B2 JPH0150156B2 (en) 1989-10-27

Family

ID=13477186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7201679A Granted JPS55163957A (en) 1979-06-08 1979-06-08 Driving method for electric charge transfer device

Country Status (1)

Country Link
JP (1) JPS55163957A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519219A1 (en) * 1981-12-30 1983-07-01 Sony Corp VIEWING DEVICE IN TECHNICAL STATE SOLID
JPS58117777A (en) * 1981-12-30 1983-07-13 Sony Corp Solid-state image pickup device
NL8302737A (en) * 1982-08-10 1984-03-01 Sony Corp SEMICONDUCTOR IMAGE RECORDING DEVICE.
JPS60210079A (en) * 1984-02-25 1985-10-22 Shoichi Tanaka Solid state area sensor
US4551757A (en) * 1981-10-22 1985-11-05 Matsushita Electric Industrial Co., Ltd. Method for driving solid-state image sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370716A (en) * 1976-12-07 1978-06-23 Sony Corp Image pickup device
JPS53126815A (en) * 1977-04-12 1978-11-06 Sony Corp Solid state image tube
JPS5456718A (en) * 1977-10-14 1979-05-08 Sony Corp Solid state pickup device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5370716A (en) * 1976-12-07 1978-06-23 Sony Corp Image pickup device
JPS53126815A (en) * 1977-04-12 1978-11-06 Sony Corp Solid state image tube
JPS5456718A (en) * 1977-10-14 1979-05-08 Sony Corp Solid state pickup device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551757A (en) * 1981-10-22 1985-11-05 Matsushita Electric Industrial Co., Ltd. Method for driving solid-state image sensor
FR2519219A1 (en) * 1981-12-30 1983-07-01 Sony Corp VIEWING DEVICE IN TECHNICAL STATE SOLID
JPS58117777A (en) * 1981-12-30 1983-07-13 Sony Corp Solid-state image pickup device
NL8302737A (en) * 1982-08-10 1984-03-01 Sony Corp SEMICONDUCTOR IMAGE RECORDING DEVICE.
JPS60210079A (en) * 1984-02-25 1985-10-22 Shoichi Tanaka Solid state area sensor
JPH0516717B2 (en) * 1984-02-25 1993-03-05 Shoichi Tanaka

Also Published As

Publication number Publication date
JPH0150156B2 (en) 1989-10-27

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