GB2010010A - Charge couple devices - Google Patents

Charge couple devices

Info

Publication number
GB2010010A
GB2010010A GB7846127A GB7846127A GB2010010A GB 2010010 A GB2010010 A GB 2010010A GB 7846127 A GB7846127 A GB 7846127A GB 7846127 A GB7846127 A GB 7846127A GB 2010010 A GB2010010 A GB 2010010A
Authority
GB
United Kingdom
Prior art keywords
register section
electrode
output means
input
relation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7846127A
Other versions
GB2010010B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB7846127A priority Critical patent/GB2010010B/en
Publication of GB2010010A publication Critical patent/GB2010010A/en
Application granted granted Critical
Publication of GB2010010B publication Critical patent/GB2010010B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

A bulk-channel charge coupled device, wherein the input or output means whereby electric charge is injected into or extracted from the register section of the device is constructed so as to be capable of handling charge packets at least as great as those that can be handled by the register section of the device without requiring input or output means control potentials differing from those utilised by the register section. For the input means this is achieved by appropriately dimensioning the first register section electrode (21') and the adjacent input means electrode (29) in relation to the buried channel (37) and the other register section electrodes (21, 23, 25). For the output means this is achieved by appropriately dimensioning the final register section electrode (25') in relation to the other register section electrodes (21, 23, 25) and the output means electrode (31) adjacent the final register section electrode (25'). <IMAGE>
GB7846127A 1977-10-19 1978-11-27 Charge coupled devices Expired GB2010010B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7846127A GB2010010B (en) 1977-10-19 1978-11-27 Charge coupled devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4354777 1977-10-19
GB7846127A GB2010010B (en) 1977-10-19 1978-11-27 Charge coupled devices

Publications (2)

Publication Number Publication Date
GB2010010A true GB2010010A (en) 1979-06-20
GB2010010B GB2010010B (en) 1982-02-17

Family

ID=26265189

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7846127A Expired GB2010010B (en) 1977-10-19 1978-11-27 Charge coupled devices

Country Status (1)

Country Link
GB (1) GB2010010B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511545A1 (en) * 1981-06-05 1983-02-18 Philips Nv SEMICONDUCTOR DEVICE COMPRISING A FOUR-PHASE CHARGE COUPLING DEVICE
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate
US4728622A (en) * 1984-02-23 1988-03-01 Nec Corporation Charge transfer device having a width changing channel
US4839911A (en) * 1986-04-18 1989-06-13 Thomson-Lsf Charger transfer shift register with voltage sensing device using a floating-potential diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2511545A1 (en) * 1981-06-05 1983-02-18 Philips Nv SEMICONDUCTOR DEVICE COMPRISING A FOUR-PHASE CHARGE COUPLING DEVICE
US4546368A (en) * 1981-09-17 1985-10-08 Nippon Electric Co., Ltd. Charge transfer device having a precisely controlled injection rate
US4728622A (en) * 1984-02-23 1988-03-01 Nec Corporation Charge transfer device having a width changing channel
US4782374A (en) * 1984-02-23 1988-11-01 Nec Corporation Charge transfer device having a width changing channel
US4839911A (en) * 1986-04-18 1989-06-13 Thomson-Lsf Charger transfer shift register with voltage sensing device using a floating-potential diode

Also Published As

Publication number Publication date
GB2010010B (en) 1982-02-17

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 19981126