JPS5776982A - Drive method for solid-state image sensor - Google Patents
Drive method for solid-state image sensorInfo
- Publication number
- JPS5776982A JPS5776982A JP55152606A JP15260680A JPS5776982A JP S5776982 A JPS5776982 A JP S5776982A JP 55152606 A JP55152606 A JP 55152606A JP 15260680 A JP15260680 A JP 15260680A JP S5776982 A JPS5776982 A JP S5776982A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- vertical
- transfer
- ccd register
- blanking period
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/70—Circuitry for compensating brightness variation in the scene
- H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To prevent blooming, by transferring the charge of the 1st vertical register to a charge absorbing section, within the period when signal charge is moved from the storage area to the 1st vertical CCD register in the vertical blanking period. CONSTITUTION:In the NTSC system, a vertical blanking period is about 1,100musec and the initial vertical blanking period is about 500musec, and when the clock frequency of inversed transfer of the 1st vertical CCD register 2 is about 2MHz, then the inversed transfer should be about 1,000 bits. Since the 1st vertical CCD register 2 consists of transfer stages of about 250-bit, most of flowing charge is inversely transferred to the charge absorbing section. When the transfer gate 3 is on-state, almost no flowing charge is left in the 1st vertical CCD register 2 to prevent blooming phenomenon.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152606A JPS5776982A (en) | 1980-10-30 | 1980-10-30 | Drive method for solid-state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55152606A JPS5776982A (en) | 1980-10-30 | 1980-10-30 | Drive method for solid-state image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5776982A true JPS5776982A (en) | 1982-05-14 |
JPH0154907B2 JPH0154907B2 (en) | 1989-11-21 |
Family
ID=15544069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55152606A Granted JPS5776982A (en) | 1980-10-30 | 1980-10-30 | Drive method for solid-state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5776982A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745271A (en) * | 1980-09-01 | 1982-03-15 | Matsushita Electronics Corp | Charge transfer type solid image pick-up device |
-
1980
- 1980-10-30 JP JP55152606A patent/JPS5776982A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745271A (en) * | 1980-09-01 | 1982-03-15 | Matsushita Electronics Corp | Charge transfer type solid image pick-up device |
Also Published As
Publication number | Publication date |
---|---|
JPH0154907B2 (en) | 1989-11-21 |
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