JPS55163880A - Semiconductor strain gauge bridge circuit - Google Patents

Semiconductor strain gauge bridge circuit

Info

Publication number
JPS55163880A
JPS55163880A JP7178579A JP7178579A JPS55163880A JP S55163880 A JPS55163880 A JP S55163880A JP 7178579 A JP7178579 A JP 7178579A JP 7178579 A JP7178579 A JP 7178579A JP S55163880 A JPS55163880 A JP S55163880A
Authority
JP
Japan
Prior art keywords
semiconductor strain
bridge
temperature
zero point
strain gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7178579A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244703B2 (enrdf_load_stackoverflow
Inventor
Katsuya Katogi
Tsutomu Okayama
Yoshitaka Matsuoka
Masanori Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7178579A priority Critical patent/JPS55163880A/ja
Publication of JPS55163880A publication Critical patent/JPS55163880A/ja
Publication of JPS6244703B2 publication Critical patent/JPS6244703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP7178579A 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit Granted JPS55163880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7178579A JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7178579A JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Publications (2)

Publication Number Publication Date
JPS55163880A true JPS55163880A (en) 1980-12-20
JPS6244703B2 JPS6244703B2 (enrdf_load_stackoverflow) 1987-09-22

Family

ID=13470566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7178579A Granted JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Country Status (1)

Country Link
JP (1) JPS55163880A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856477A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体圧力変換器
JPS63283073A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体圧力センサ
FR2776384A1 (fr) * 1998-03-20 1999-09-24 Snecma Capteur de pression avec compensation de la non-linearite de la derive de zero aux tres basses temperatures
JP2002527767A (ja) * 1998-10-21 2002-08-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ブリッジ回路内に接続されている圧抵抗性測定抵抗の特性曲線の温度非線形性補償のための回路装置
RU2569925C1 (ru) * 2014-08-22 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Косвенный способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом нелинейности температурной характеристики выходного сигнала датчика
JP2016205992A (ja) * 2015-04-22 2016-12-08 株式会社豊田中央研究所 力検知装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856477A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体圧力変換器
JPS63283073A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体圧力センサ
FR2776384A1 (fr) * 1998-03-20 1999-09-24 Snecma Capteur de pression avec compensation de la non-linearite de la derive de zero aux tres basses temperatures
WO1999049288A1 (fr) * 1998-03-20 1999-09-30 Societe Nationale D'etude Et De Construction De Moteurs D'aviation - Snecma Capteur de pression avec compensation de la non-linearite de la derive de zero aux tres basses temperatures
US6314815B1 (en) 1998-03-20 2001-11-13 Societe Nationale D'etude Et De Construction De Moteurs D'aviation - S.N.E.C.M.A. Pressure sensor with compensation for null shift non-linearity at very low temperatures
JP2002527767A (ja) * 1998-10-21 2002-08-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング ブリッジ回路内に接続されている圧抵抗性測定抵抗の特性曲線の温度非線形性補償のための回路装置
RU2569925C1 (ru) * 2014-08-22 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Косвенный способ настройки тензорезисторных датчиков с мостовой измерительной цепью по мультипликативной температурной погрешности с учетом нелинейности температурной характеристики выходного сигнала датчика
JP2016205992A (ja) * 2015-04-22 2016-12-08 株式会社豊田中央研究所 力検知装置

Also Published As

Publication number Publication date
JPS6244703B2 (enrdf_load_stackoverflow) 1987-09-22

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