JPS55163880A - Semiconductor strain gauge bridge circuit - Google Patents

Semiconductor strain gauge bridge circuit

Info

Publication number
JPS55163880A
JPS55163880A JP7178579A JP7178579A JPS55163880A JP S55163880 A JPS55163880 A JP S55163880A JP 7178579 A JP7178579 A JP 7178579A JP 7178579 A JP7178579 A JP 7178579A JP S55163880 A JPS55163880 A JP S55163880A
Authority
JP
Japan
Prior art keywords
semiconductor strain
bridge
temperature
zero point
strain gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7178579A
Other languages
Japanese (ja)
Other versions
JPS6244703B2 (en
Inventor
Katsuya Katogi
Tsutomu Okayama
Yoshitaka Matsuoka
Masanori Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7178579A priority Critical patent/JPS55163880A/en
Publication of JPS55163880A publication Critical patent/JPS55163880A/en
Publication of JPS6244703B2 publication Critical patent/JPS6244703B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To compensate the variation of zero point upon change of temperature in a semiconductor strain gauge bridge circuit by connecting a solid resistor in parallel with semiconductor strain gauges forming a bridge and connecting a non-linear temperature-sensitive element at one side in series therewith. CONSTITUTION:A bridge is formed with semiconductor strain gauges R1-R4, and zero point compensating resistors RP1-RP4, RS1, RS2 having low resistance temperature coefficient. When temperature sensitive elements (thermistors) RX1, RX2 of non-liner type are connected in series with the side of the bridge in the temperature coefficient of the resistance value, it can compensate the zero point with respect to the bridge output DELTAE due to irregular secondary coefficient of the resistance temperature coefficient of the semiconductor strain gauges R1-R2.
JP7178579A 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit Granted JPS55163880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7178579A JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7178579A JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Publications (2)

Publication Number Publication Date
JPS55163880A true JPS55163880A (en) 1980-12-20
JPS6244703B2 JPS6244703B2 (en) 1987-09-22

Family

ID=13470566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7178579A Granted JPS55163880A (en) 1979-06-07 1979-06-07 Semiconductor strain gauge bridge circuit

Country Status (1)

Country Link
JP (1) JPS55163880A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856477A (en) * 1981-09-30 1983-04-04 Toshiba Corp Semiconductor pressure converter
JPS63283073A (en) * 1987-05-15 1988-11-18 Toshiba Corp Semiconductor pressure sensor
FR2776384A1 (en) * 1998-03-20 1999-09-24 Snecma Pressure sensor with compensation for null-shift non-linearity at very low temperatures
JP2002527767A (en) * 1998-10-21 2002-08-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Circuit arrangement for temperature non-linearity compensation of the characteristic curve of a piezoresistive measuring resistor connected in a bridge circuit
RU2569925C1 (en) * 2014-08-22 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Indirect method to adjust strain gauges with bridge measuring circuit by multiplicative temperature error with account of non-linearity of temperature characteristic of gauge output signal
JP2016205992A (en) * 2015-04-22 2016-12-08 株式会社豊田中央研究所 Force detector

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856477A (en) * 1981-09-30 1983-04-04 Toshiba Corp Semiconductor pressure converter
JPS6356933B2 (en) * 1981-09-30 1988-11-09 Tokyo Shibaura Electric Co
JPS63283073A (en) * 1987-05-15 1988-11-18 Toshiba Corp Semiconductor pressure sensor
FR2776384A1 (en) * 1998-03-20 1999-09-24 Snecma Pressure sensor with compensation for null-shift non-linearity at very low temperatures
WO1999049288A1 (en) * 1998-03-20 1999-09-30 Societe Nationale D'etude Et De Construction De Moteurs D'aviation - Snecma Pressure sensor with compensation for null shift non-linearity at very low temperatures
US6314815B1 (en) 1998-03-20 2001-11-13 Societe Nationale D'etude Et De Construction De Moteurs D'aviation - S.N.E.C.M.A. Pressure sensor with compensation for null shift non-linearity at very low temperatures
JP2002527767A (en) * 1998-10-21 2002-08-27 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング Circuit arrangement for temperature non-linearity compensation of the characteristic curve of a piezoresistive measuring resistor connected in a bridge circuit
RU2569925C1 (en) * 2014-08-22 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Ульяновский государственный технический университет" Indirect method to adjust strain gauges with bridge measuring circuit by multiplicative temperature error with account of non-linearity of temperature characteristic of gauge output signal
JP2016205992A (en) * 2015-04-22 2016-12-08 株式会社豊田中央研究所 Force detector

Also Published As

Publication number Publication date
JPS6244703B2 (en) 1987-09-22

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