JPS55160421A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number
JPS55160421A
JPS55160421A JP6842679A JP6842679A JPS55160421A JP S55160421 A JPS55160421 A JP S55160421A JP 6842679 A JP6842679 A JP 6842679A JP 6842679 A JP6842679 A JP 6842679A JP S55160421 A JPS55160421 A JP S55160421A
Authority
JP
Japan
Prior art keywords
substrate
molecular beam
thin film
room
prepared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6842679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63937B2 (enExample
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842679A priority Critical patent/JPS55160421A/ja
Publication of JPS55160421A publication Critical patent/JPS55160421A/ja
Publication of JPS63937B2 publication Critical patent/JPS63937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6842679A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160421A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842679A JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842679A JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160421A true JPS55160421A (en) 1980-12-13
JPS63937B2 JPS63937B2 (enExample) 1988-01-09

Family

ID=13373345

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842679A Granted JPS55160421A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160421A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625631A (ja) * 1985-07-02 1987-01-12 Fujitsu Ltd 分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) * 1985-08-07 1987-02-12 The Commonwealth Of Australia Control of uniformity of growing alloy film
AU592110B2 (en) * 1985-08-07 1990-01-04 Commonwealth Of Australia, The Control of uniformity of growing alloy film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132977A (en) * 1975-05-14 1976-11-18 Matsushita Electric Ind Co Ltd Junction-type field effect transistor process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51132977A (en) * 1975-05-14 1976-11-18 Matsushita Electric Ind Co Ltd Junction-type field effect transistor process

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS625631A (ja) * 1985-07-02 1987-01-12 Fujitsu Ltd 分子線結晶成長装置及び分子線結晶成長方法
WO1987000966A1 (en) * 1985-08-07 1987-02-12 The Commonwealth Of Australia Control of uniformity of growing alloy film
US4770895A (en) * 1985-08-07 1988-09-13 The Commonwealth Of Australia Control of uniformity of growing alloy film
AU592110B2 (en) * 1985-08-07 1990-01-04 Commonwealth Of Australia, The Control of uniformity of growing alloy film
US4934313A (en) * 1985-08-07 1990-06-19 Commonwealth Of Australia Control of uniformity of growing alloy film

Also Published As

Publication number Publication date
JPS63937B2 (enExample) 1988-01-09

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