JPS55154779A - Phototransistor - Google Patents

Phototransistor

Info

Publication number
JPS55154779A
JPS55154779A JP6300379A JP6300379A JPS55154779A JP S55154779 A JPS55154779 A JP S55154779A JP 6300379 A JP6300379 A JP 6300379A JP 6300379 A JP6300379 A JP 6300379A JP S55154779 A JPS55154779 A JP S55154779A
Authority
JP
Japan
Prior art keywords
shielding plates
interval
stem
phototransistor
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6300379A
Other languages
Japanese (ja)
Inventor
Yoshikazu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6300379A priority Critical patent/JPS55154779A/en
Publication of JPS55154779A publication Critical patent/JPS55154779A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To inexpensively obtain a transistor having less irregularity and preferable unidirectional sensitivity characteristics by forming a plurality of shielding plates projected inwardly as supported by a metallic case to an incident optical path on a phototransistor element. CONSTITUTION:A phototransistor element 2 is fixed to the center of the flat surface of a metallic stem 4, and a cylindrical metallic case 3 having a plurality of parallel shielding plates 6 internally is mounted while engaging it with the step formed at the peripheral edge of the stem 4. At this time these shielding plates 6 are provided at an interval, and a selective light transmission opening is formed at the center. Thereafter, a flat plate glass 5 is engaged with the light incident plane integrally. In this manner, the light incident obliquely to the element 2 is shielded, and only the incident light at right angle is sensitized by the element. When suitably selecting the diameter d of the opening and the interval l of the plates 6, the directional property can be altered.
JP6300379A 1979-05-22 1979-05-22 Phototransistor Pending JPS55154779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6300379A JPS55154779A (en) 1979-05-22 1979-05-22 Phototransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6300379A JPS55154779A (en) 1979-05-22 1979-05-22 Phototransistor

Publications (1)

Publication Number Publication Date
JPS55154779A true JPS55154779A (en) 1980-12-02

Family

ID=13216702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6300379A Pending JPS55154779A (en) 1979-05-22 1979-05-22 Phototransistor

Country Status (1)

Country Link
JP (1) JPS55154779A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063694A2 (en) * 1981-03-27 1982-11-03 Honeywell Inc. Electromagnetic radiation detection system with a radiation-limiting shield and method for fabricating the shield
JPS6387953U (en) * 1986-11-27 1988-06-08
KR100339649B1 (en) * 1999-05-10 2002-06-05 강석원 A protection box for water supply gauge which is exposed to outer space
JP2008069599A (en) * 2006-09-15 2008-03-27 Kitz Corp Meter unit warming cover

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0063694A2 (en) * 1981-03-27 1982-11-03 Honeywell Inc. Electromagnetic radiation detection system with a radiation-limiting shield and method for fabricating the shield
JPS6387953U (en) * 1986-11-27 1988-06-08
JPH0526776Y2 (en) * 1986-11-27 1993-07-07
KR100339649B1 (en) * 1999-05-10 2002-06-05 강석원 A protection box for water supply gauge which is exposed to outer space
JP2008069599A (en) * 2006-09-15 2008-03-27 Kitz Corp Meter unit warming cover

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