JPS55139644A - Semiconductor recording system - Google Patents
Semiconductor recording systemInfo
- Publication number
- JPS55139644A JPS55139644A JP4424179A JP4424179A JPS55139644A JP S55139644 A JPS55139644 A JP S55139644A JP 4424179 A JP4424179 A JP 4424179A JP 4424179 A JP4424179 A JP 4424179A JP S55139644 A JPS55139644 A JP S55139644A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- material film
- head
- layers
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE: To attain high-density recording by obtaining a recording medium by forming an electret material film on a semiconductor substrate, and then by injecting electric charge by relatively scanning a scanning electrode on this recording medium.
CONSTITUTION: In n-type silicon semiconductor substrate 11, p-type impurity layers 12 and 13 are formed by diffusing and on the surface of substrate 11 between layers 12 and 13, electret material film 14 such as "Teflon " is formed, thereby constituting recording medium 10. The injection of charge by applying a signal voltage between recording head 16 on material film 14 and substrate 11 forms a depletion layer in substrate 11 right under material film 14 and a channel between impurity layers 12 and 13. To reproduce the thus recorded signal, fixed read voltage VR is applied between head 17 and electrode 15 on layer 13 while reproducing head 17 on layer 12 is relatively moved. When head 17 passes by the channel part of substrate 11, a current flows between layers 12 and 13, and consequently output signal VOUT is obtained. This method makes high-density recording possible even when the track width is narrow.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4424179A JPS55139644A (en) | 1979-04-13 | 1979-04-13 | Semiconductor recording system |
DE3041414T DE3041414C2 (en) | 1979-04-13 | 1980-04-14 | Signal recording and reproducing apparatus |
GB8039090A GB2060980B (en) | 1979-04-13 | 1980-04-14 | Signal recording/reproducing device |
PCT/JP1980/000072 WO1980002342A1 (en) | 1979-04-13 | 1980-04-14 | Signal recording/reproducing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4424179A JPS55139644A (en) | 1979-04-13 | 1979-04-13 | Semiconductor recording system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55139644A true JPS55139644A (en) | 1980-10-31 |
Family
ID=12686030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4424179A Pending JPS55139644A (en) | 1979-04-13 | 1979-04-13 | Semiconductor recording system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55139644A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5469426A (en) * | 1993-06-18 | 1995-11-21 | Wang; Yu | High write speed erasable optical recording disk using active semiconductor devices at each pixel |
US7027364B2 (en) * | 2001-12-06 | 2006-04-11 | Samsung Electronics Co., Ltd. | Information storage apparatus using a magnetic medium coated with a wear-resistant thin film |
-
1979
- 1979-04-13 JP JP4424179A patent/JPS55139644A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5469426A (en) * | 1993-06-18 | 1995-11-21 | Wang; Yu | High write speed erasable optical recording disk using active semiconductor devices at each pixel |
US7027364B2 (en) * | 2001-12-06 | 2006-04-11 | Samsung Electronics Co., Ltd. | Information storage apparatus using a magnetic medium coated with a wear-resistant thin film |
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