JPS55139644A - Semiconductor recording system - Google Patents

Semiconductor recording system

Info

Publication number
JPS55139644A
JPS55139644A JP4424179A JP4424179A JPS55139644A JP S55139644 A JPS55139644 A JP S55139644A JP 4424179 A JP4424179 A JP 4424179A JP 4424179 A JP4424179 A JP 4424179A JP S55139644 A JPS55139644 A JP S55139644A
Authority
JP
Japan
Prior art keywords
substrate
material film
head
layers
recording medium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4424179A
Other languages
Japanese (ja)
Inventor
Kenichi Sawazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4424179A priority Critical patent/JPS55139644A/en
Priority to DE3041414T priority patent/DE3041414C2/en
Priority to GB8039090A priority patent/GB2060980B/en
Priority to PCT/JP1980/000072 priority patent/WO1980002342A1/en
Publication of JPS55139644A publication Critical patent/JPS55139644A/en
Pending legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To attain high-density recording by obtaining a recording medium by forming an electret material film on a semiconductor substrate, and then by injecting electric charge by relatively scanning a scanning electrode on this recording medium.
CONSTITUTION: In n-type silicon semiconductor substrate 11, p-type impurity layers 12 and 13 are formed by diffusing and on the surface of substrate 11 between layers 12 and 13, electret material film 14 such as "Teflon " is formed, thereby constituting recording medium 10. The injection of charge by applying a signal voltage between recording head 16 on material film 14 and substrate 11 forms a depletion layer in substrate 11 right under material film 14 and a channel between impurity layers 12 and 13. To reproduce the thus recorded signal, fixed read voltage VR is applied between head 17 and electrode 15 on layer 13 while reproducing head 17 on layer 12 is relatively moved. When head 17 passes by the channel part of substrate 11, a current flows between layers 12 and 13, and consequently output signal VOUT is obtained. This method makes high-density recording possible even when the track width is narrow.
COPYRIGHT: (C)1980,JPO&Japio
JP4424179A 1979-04-13 1979-04-13 Semiconductor recording system Pending JPS55139644A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4424179A JPS55139644A (en) 1979-04-13 1979-04-13 Semiconductor recording system
DE3041414T DE3041414C2 (en) 1979-04-13 1980-04-14 Signal recording and reproducing apparatus
GB8039090A GB2060980B (en) 1979-04-13 1980-04-14 Signal recording/reproducing device
PCT/JP1980/000072 WO1980002342A1 (en) 1979-04-13 1980-04-14 Signal recording/reproducing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4424179A JPS55139644A (en) 1979-04-13 1979-04-13 Semiconductor recording system

Publications (1)

Publication Number Publication Date
JPS55139644A true JPS55139644A (en) 1980-10-31

Family

ID=12686030

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4424179A Pending JPS55139644A (en) 1979-04-13 1979-04-13 Semiconductor recording system

Country Status (1)

Country Link
JP (1) JPS55139644A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469426A (en) * 1993-06-18 1995-11-21 Wang; Yu High write speed erasable optical recording disk using active semiconductor devices at each pixel
US7027364B2 (en) * 2001-12-06 2006-04-11 Samsung Electronics Co., Ltd. Information storage apparatus using a magnetic medium coated with a wear-resistant thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5469426A (en) * 1993-06-18 1995-11-21 Wang; Yu High write speed erasable optical recording disk using active semiconductor devices at each pixel
US7027364B2 (en) * 2001-12-06 2006-04-11 Samsung Electronics Co., Ltd. Information storage apparatus using a magnetic medium coated with a wear-resistant thin film

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