WO1980002342A1 - Signal recording/reproducing device - Google Patents

Signal recording/reproducing device Download PDF

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Publication number
WO1980002342A1
WO1980002342A1 PCT/JP1980/000072 JP8000072W WO8002342A1 WO 1980002342 A1 WO1980002342 A1 WO 1980002342A1 JP 8000072 W JP8000072 W JP 8000072W WO 8002342 A1 WO8002342 A1 WO 8002342A1
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WO
WIPO (PCT)
Prior art keywords
recording
semiconductor layer
signal
layer
conductive
Prior art date
Application number
PCT/JP1980/000072
Other languages
French (fr)
Japanese (ja)
Inventor
N Sawazaki
Original Assignee
Tokyo Shibaura Electric Co
N Sawazaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4424079A external-priority patent/JPS55139643A/en
Priority claimed from JP4424179A external-priority patent/JPS55139644A/en
Application filed by Tokyo Shibaura Electric Co, N Sawazaki filed Critical Tokyo Shibaura Electric Co
Priority to DE3041414T priority Critical patent/DE3041414C2/en
Publication of WO1980002342A1 publication Critical patent/WO1980002342A1/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/08—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electrostatic charge injection; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/08—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by electric charge or by variation of electric resistance or capacitance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/06—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electrical capacitance; Record carriers therefor
    • G11B9/07—Heads for reproducing capacitive information
    • G11B9/075—Heads for reproducing capacitive information using mechanical contact with record carrier, e.g. by stylus

Definitions

  • the present invention relates to an apparatus for recording and reproducing audio / video and other information signals using a semiconductor layer.
  • the present invention uses a semiconductor layer to record signals at high density without the need for complicated electrode wiring.
  • the present invention is an apparatus for performing 12 recording and reproduction of signals using a semiconductor layer
  • an insulator film having a function of accumulating electric charges for example, an insulator film that easily becomes an electret is coated on a semiconductor layer to constitute a recording medium, and signal recording is performed by conductive recording. This is performed by injecting a charge corresponding to a signal to be recorded into this insulator film using a head. The injected charge is stored semi-permanently in the insulator film
  • this insulator film becomes an electret. Then, the depletion layer expands in the semiconductor layer due to the electric field of the electret. Therefore, along with the recording traffic, for example, if the change in the capacitance of the depletion layer is detected by using a conductive reproducing head, signal reproduction is performed.
  • a recording medium can be formed, and signals can be recorded and erased electrically and arbitrarily without applying complex compress electrode arrangement on the semiconductor layer. Moreover, since a large reproduction output can be easily obtained compared to a magnetic disk, the width of the recording track can be narrowed and signals can be recorded at high density.
  • Figure 1 is a diagram- Figure 2 is a diagram for SurudoAkira playback kinematic 5 installment in the embodiment for explaining the fg recording operation in the embodiment of the invention
  • Figure 3 is in the same embodiment
  • FIG. 4 is a circuit diagram used for another reproduction operation
  • FIG. 4 is a diagram for explaining a self-recording operation in another embodiment of the present invention
  • FIG. 5 is a diagram for explaining a reproduction operation in the embodiment, It is.
  • FIG. 2 In order to explain the recording operation in one embodiment of the invention, the recording medium shows a partial cross section.
  • Recording media are P-type silicon and semiconductor layers such as substrates
  • the surface of 1 is coated with an insulating film 2 made of, for example, an ethylene oxide resin such as tetrafluoroethylene resin.
  • the border film 2 may be coated on the entire surface of the semiconductor layer 1 or may be selectively coated spirally or concentrically only on a region to be a recording track.
  • a conductor 3 such as aluminum is adhered.
  • a conductive recording head 4 is prepared in contact with the insulator film 2 of the 12 recording disk.
  • the recording heads 4, 4 are moved relative to each other as indicated by arrows on the insulating film 2 by an appropriate tracking means.
  • a signal 5 to be recorded is applied between the port 4 and the compressive membrane 3.
  • the signal 5 to be recorded is from the end of the recording head 4].
  • the signal 5 to be recorded is several 10 V.
  • the signal 5 to be recorded 15 is intermittently applied, so that the charge corresponding to the signal 5 to be recorded is injected into the insulating film 2.
  • the insulator film 2 becomes an electret.
  • This electret is capable of semi-permanently storing injected loads.
  • the electric characteristics of the semiconductor layer 1 are changed by the electric field generated by the insulator film 2 serving as an electret, and the semiconductor layer 1 is a P-type and the insulating film 2 is formed. Injected
  • the signal is a change in the thickness of the depletion layer, in other words,
  • FIG. In other words, the cache 9 between the regeneration head 7 and the packing material 3 including the capacitance of the depletion slaughter 6
  • the resonance circuit 11 is constituted by the ink 10 connected to the good 7 for reproduction.
  • the resonance frequency of the resonance circuit 11 changes by the static: capacitance change of the depletion layer 6 due to the movement of the pulse 7 to the reproduction. Therefore, the reference oscillator 1 2
  • the recording signal is erased by moving the conductive erase head on the recording track, and applying a DC signal or a high-frequency signal having the opposite polarity to that of the recording]).
  • the record may be prepared separately from the record, or it may be shared with the record.
  • ⁇ is a disk, and the recording track is formed in a spiral or concentric shape, the conventional audio and video discs can be used.
  • the above device can be larger than a conventional magnetic disk. Therefore, it is easy to obtain a proper reproduction output.] Therefore, the radiation of the recording track can be reduced, and high-density recording can be performed.
  • this device performs signal recording and playback operations according to recording and playback heaps])]], and the recording medium is simply a semiconductor layer coated with an insulator film. As such, it does not require complicated electrode wiring as in semiconductor memory, and can be mass-produced and has high reliability. .
  • FIG. 4 shows another embodiment of the present invention.
  • the surface of a semiconductor chip 21 such as an n-type silicon is coated with an insulator film 22 which is easy to electrify only in an area corresponding to a recording track.
  • a semiconductor chip 21 such as an n-type silicon is coated with an insulator film 22 which is easy to electrify only in an area corresponding to a recording track.
  • 22 2 is the electret.
  • the semiconducting layer 21 is formed on the semiconducting layer 21 along the opposite side along the both sides of the 15-record trap from the insulating film 22.
  • An electrode 27 is continuously provided on the surface of the ⁇ - second impurity added region 26 forming the first and second impurity added regions 25 and 26.
  • the regenerating operation is as follows. Prepare P28 for conductive regeneration that slides on the surface of the first impurity-added region 25, ground the electrode 27, and by the preparative When applying a negative reading to ⁇ V R 8 in via the load resistor 2 9]? performed.
  • the reproducing head 28 since the first and second impurity-added regions 25 and 26 are formed continuously along the recording traffic, the reproducing head 28 has a chamfer. Even at a position where a cell is formed, there is an electric current from the position where the channel is formed. However, the effect of this current inflow is that the first doped region
  • the first and second impurity-added regions are identical in the case of this embodiment.
  • the recording medium does not necessarily have to be in the form of a disk, but can be used in the form of a semiconductor film in which an amorphous semiconductor layer is formed on a tape, for example. is there .
  • the tracking method for recording and reproducing signals is to form a fine trench groove on the semiconductor layer by using a recent fine processing technology for LSI. It is easy to implement, and can be implemented without using a special service system.
  • the signal recording / reproducing apparatus is useful as an apparatus for recording and reproducing an audio signal, an image, and other information signals arbitrarily and at a high density using a simple recording medium.

Landscapes

  • Optical Recording Or Reproduction (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

A device for recording/reproducing optionally audio, image or like information signals with high density, using a recording medium with a simplified structure by utilizing a semiconductor layer. The device includes a semiconductor layer (1), an insulator layer (2) formed on the semiconductor layer (1) which has a charge-storing function, signal recording means wherein a conductive recording head (4) supplied with signals to be recorded is relatively moved on the insulator layer (2) and injects electric charges into the insulator layer (2), and signal reproducing means wherein a conductive reproducing head (7) is relatively moved along the recorded tracks on which signals are recorded by the signal recording means and detects variations in the electric properties of the semiconductor layer (1) which are caused by the recorded signals.

Description

明 細 書  Specification
信号記録再生装置  Signal recording / reproducing device
技術分野 Technical field
この発明は 半導体層を用いて、 音声 & 映像その 他の情報信号を記録 し再生するための装置に関する 。  The present invention relates to an apparatus for recording and reproducing audio / video and other information signals using a semiconductor layer.
背景技術 Background art
信号記録デ ィ ス ク と して、 従来よ j？、 機械的加工 に よ ]Γ信号記録を行う音声レ コ ー ドゃ ビデオ デ ィ ス ク、 電子計算機用磁.気デ ィ ス ク等が知 られている 。 しかし ながら、 従来の音声レ コ ー ドや ビデオ デ ィ ス クは、 通 常、 再生專用であって、 任意に信号を記録した ]) 消去 した ]?する こ とはでき い。 磁気ディ スクは任意に信 号を記録 した ]?消去した ]?すると とができ るが 高密 度紀録が難 しい。 例えぱ、 直径 3 0 imの磁気デ ィ スク での紀録容量は数秒程度である 。  Conventional signal recording disk j? [Mechanical processing]] ΓVoice record for signal recording ゃ Video disk, magnetic disk for computer, etc. are known. However, conventional audio and video discs are usually used exclusively for playback, and signals can be recorded arbitrarily. The magnetic disk recorded the signal arbitrarily.]? Erased] ?, but it is difficult to record high-density. For example, the record capacity of a magnetic disk with a diameter of 30 im is about several seconds.
と ころで、 近年、 LS I 技術によ ]?大容量の半導体 メ モ リ が得 られる よ う にる つた。 この半導体メ モ リ を 己録媒体と して用いれぱ、 高密度記録が可能で、 しか も信号の記録および消去を任意に行う こ と も でき る と 思われる 。 しかしながら、 このよ う な半導体メ モ リ は、 通常罨極配線を必要と し、 大容量になる程その構成が 複雑にな って信頼性も低下する と い う問題がある 。  In recent years, however, large-capacity semiconductor memory has been obtained by using LSI technology. If this semiconductor memory is used as a self-recording medium, high-density recording will be possible, and it will be possible to record and erase signals arbitrarily. However, such a semiconductor memory usually requires a packing electrode wiring, and there is a problem that the larger the capacity is, the more complicated the configuration becomes and the lower the reliability becomes.
この発明は、 半導体層を用 て、 複雑 電極配線 を要せず高密度に信号を記録する こ とができ る言己録媒  The present invention uses a semiconductor layer to record signals at high density without the need for complicated electrode wiring.
O PI O PI
。. 体を構成し、 かつ任意に信号の記録、 再生およ び消去 を行う と と を可能と した、 信号記録再生装置を提供す る と を 目的とする 。 . . It is an object of the present invention to provide a signal recording / reproducing apparatus which can constitute a body and can record, reproduce, and delete a signal arbitrarily.
発明の開示 Disclosure of the invention
即ちこの発明は、 半導体層を用いて信号の 12録ぉ よび再生をする装置であって ；  That is, the present invention is an apparatus for performing 12 recording and reproduction of signals using a semiconductor layer;
(1) 半導体層、  (1) semiconductor layer,
(2) こ の半導体層上に形成された、 罨荷を蓄積する機 能を もつ絶縁体膜、  (2) an insulator film formed on this semiconductor layer and having a function of accumulating a compress;
(3) こ の铯緣体膜上を、 記録すべき信号が印加された 導電性記録へ ッ ドを钼対的に移動せしめて、 こ の絶 縁体膜に ¾荷を注入して信号を言己録^ る手段、 およ び (3) The conductive recording head to which the signal to be recorded is applied is moved relative to the insulating film, and a load is injected into the insulating film to transmit the signal. Means of self-recording, and
(4) との手段に よ ]?信号が記録された記録 ト ラ - クに 沿って導罨性再生へグ Pを相対的に移動せしめて、 記録された信号に よ る上 ie半導体曆の電気的特性の 変化を検出 して信号を再生する手段、 - を含むこ と を特徵と している 。 (4) By moving the P relative to the compressible reproduction along the recording track where the signal was recorded, and by using the recorded signal, It is characterized by including means for detecting a change in electrical characteristics and reproducing a signal.
電荷を蓄積する機能を もつ絶縁体膜と して、 例え ばエ レ ク ト レ ッ ト に な 易 絶縁体膜を半導体層上に 被覆 して記録媒体が構成され 信号記録は、 導電性記 録へ タ ドを用いて こ の絶縁体膜中に記録すべき信号に 応じた電荷を注入する こ と に よ 行われる 。 こ う して 注入された電荷は絶縁体膜中に半永久的に蓄積される  As an insulator film having a function of accumulating electric charges, for example, an insulator film that easily becomes an electret is coated on a semiconductor layer to constitute a recording medium, and signal recording is performed by conductive recording. This is performed by injecting a charge corresponding to a signal to be recorded into this insulator film using a head. The injected charge is stored semi-permanently in the insulator film
OMPI WIF° 結果、 こ の絶縁体膜はエ レク ト レ ク ト と る 。 そ して ' エ レク ト レ ツ トの電界によ 2?半導体層に空乏層が拡が る。 そこで記録 ト ラ グ ク に沿って、 例えぱこの空乏層 の静電容量の変化を導電性再生へ ッ ドを用いて検出す s る と とによ ]?信号再生が行われる。 OMPI W IF ° As a result, this insulator film becomes an electret. Then, the depletion layer expands in the semiconductor layer due to the electric field of the electret. Therefore, along with the recording traffic, for example, if the change in the capacitance of the depletion layer is detected by using a conductive reproducing head, signal reproduction is performed.
この発明に よれば、 半導体層上に複雜な罨極配鎳 を施すこ と な く 、 記録媒体が構成され 信号の記録 よび消去を、 電気的に、 かつ任意に行う こ とができ る。 . しかも磁気デ ィ スクに比べて容易に大き 再生出力が0 得られるため、 記録 ト ラ ッ クの幅を狭 く して、 高密度 に'信号を記録する とができ る 。  According to the present invention, a recording medium can be formed, and signals can be recorded and erased electrically and arbitrarily without applying complex compress electrode arrangement on the semiconductor layer. Moreover, since a large reproduction output can be easily obtained compared to a magnetic disk, the width of the recording track can be narrowed and signals can be recorded at high density.
図面の簡単 ¾鋭明  Easy drawing
第 1 図はとの発明の一実施例における fg録動作を 説明するための図〜 第 2 図は同実施例における再生動5 作を鋭明するための図、 第 3 図は同実施例における別 の再生動作に用いる回路図、 第 4 図はこの発明の別の " 実施例における 己録動作を説明するための図、 第 5 図 は同実施例における再生動作を説明する 7 めの図、 で ある 。Figure 1 is a diagram-Figure 2 is a diagram for SurudoAkira playback kinematic 5 installment in the embodiment for explaining the fg recording operation in the embodiment of the invention, Figure 3 is in the same embodiment FIG. 4 is a circuit diagram used for another reproduction operation, FIG. 4 is a diagram for explaining a self-recording operation in another embodiment of the present invention, FIG. 5 is a diagram for explaining a reproduction operation in the embodiment, It is.
0 発明を実施するための最良の形態 . 0 BEST MODE FOR CARRYING OUT THE INVENTION
この発明の詳細を、 添付図面を用いて次に説明す る 。 第 1.図は 2： 発明の一実施例におけ 記録動作を 説明するためのも ので、 記録媒体は一部の断面を示 し ている。 記録媒体は、 P型シ リ コ ン.基板等の半導体層 1 の表面にエ レク ト レ プ ト に ¾ ]?易い V 例えば四弗化 エ チ レ ン樹脂等の絶緣体膜 2 を被覆 したも のである。 給縁体膜 2 は、 半導体層 1 の表面全面に被覆されてい ても よい し、 記録 ト ラ ク ク と なる領域にのみ、 らせん 状にまたは同心円状に選択的に被覆されていて も よ 。 半導体層 1 の裏面にはア ル ミ - ゥ ム等の導電体嫫 3 が 被着されている。 The details of the present invention will be described below with reference to the accompanying drawings. FIG. 1. FIG. 2: In order to explain the recording operation in one embodiment of the invention, the recording medium shows a partial cross section. Recording media are P-type silicon and semiconductor layers such as substrates The surface of 1 is coated with an insulating film 2 made of, for example, an ethylene oxide resin such as tetrafluoroethylene resin. The border film 2 may be coated on the entire surface of the semiconductor layer 1 or may be selectively coated spirally or concentrically only on a region to be a recording track. On the back surface of the semiconductor layer 1, a conductor 3 such as aluminum is adhered.
信号記録時には、 と の 12録デ ィ ス ク の铯縁体膜 2 に接 して、 導電性記録ヘ プ ド 4 が用意される 。 記録へ タ ト， 4 は適当 ¾ ト ラ ッ キ ン グ手段に よ 、 絶縁体膜 2 上を矢印で示すよ う に相対的に移動せしめ られる 。 そ して、 こ の記録へ - ト， 4 と導罨体膜 3 の間に記録すベ き信号 5 が印加される 。. 記録すべき信号 5 は記録へ ッ ド 4 の先端よ ]? コ ナ放電を生じる程度の電圧とする 。  At the time of signal recording, a conductive recording head 4 is prepared in contact with the insulator film 2 of the 12 recording disk. The recording heads 4, 4 are moved relative to each other as indicated by arrows on the insulating film 2 by an appropriate tracking means. Then, a signal 5 to be recorded is applied between the port 4 and the compressive membrane 3. The signal 5 to be recorded is from the end of the recording head 4].
ヽ  ヽ
例えば、 絶縁体膜 2 をおよそ 0. 1 tin と したと き、 記 録すべき信号 5 は数 1 0 Vである 。 こ う して、 記録へ P 4 を移動せしめるが ら 15録 すべき信号 5 を煩次印加 してい く と と に よ 、 絶縁体 膜 2 中に紀録すべき侑号 5 に応じた電荷が注入され、 絶縁体膜 2 は エ レク ト レ プ ト と る る 。 こ のエ レク ト レ ッ トは注入された置荷を半永久的に蓄積する こ とがで き る 。 この と き、 エ レク ト レ グ ト と な った絶縁体膜 2 の発生する電界に よ って半導体層 1 は電気的特性が変 化し、 半導体層 1 が P型で、 絶緣体膜 2 に注入された For example, when the thickness of the insulator film 2 is about 0.1 tin, the signal 5 to be recorded is several 10 V. In this way, while moving P 4 to the recording, the signal 5 to be recorded 15 is intermittently applied, so that the charge corresponding to the signal 5 to be recorded is injected into the insulating film 2. As a result, the insulator film 2 becomes an electret. This electret is capable of semi-permanently storing injected loads. At this time, the electric characteristics of the semiconductor layer 1 are changed by the electric field generated by the insulator film 2 serving as an electret, and the semiconductor layer 1 is a P-type and the insulating film 2 is formed. Injected
、 Ox PI , Ox PI
WIPO 電荷が正電荷であれば、 空乏層 6 が形成される 。 この 空乏層 6 の厚さはエ レク ト レ プ ト の電界の強さ、 つま WIPO If the charge is positive, a depletion layer 6 is formed. The thickness of the depletion layer 6 depends on the electric field strength of the electret, that is,
j?記録すべき信号 5 に よ ])絶緣体膜 2 に注入された電 荷量に応じて変化する。 従ってこ の実施例によれぱ、 信号が空乏曆の厚みの変化と して、 換言すれば静罨容  j? It depends on the signal 5 to be recorded.)) It changes according to the amount of charge injected into the insulator film 2. Therefore, according to this embodiment, the signal is a change in the thickness of the depletion layer, in other words,
'量の変化と して記録される こ と になる 。  'It will be recorded as a change in volume.
記録された信号の再生は 半導体層 1 の記録 ト ラ タ ク に沿った電気的特性の変化を電気的に検出する こ と で行われる 。 具体的には、 第 2 図に示すよ う に導覚 性再生ヘ プ ト， 7 を用意し、 これと導電体膜 3 との間に 高周波信号 8 を印加 して * 再生へ タ ド 7 を記録 ト ラ ッ クに沿って相対的に移動せし なが ら、 空乏層 の静 電容量変化を検出すれぱよ い。  Reproduction of a recorded signal is performed by electrically detecting a change in electrical characteristics of the semiconductor layer 1 along a recording track. Specifically, as shown in FIG. 2, a sensory playback guide 7 is prepared, and a high-frequency signal 8 is applied between the sensor and the conductive film 3 to thereby * It is advisable to detect a change in the capacitance of the depletion layer while moving relatively along the recording track.
空乏屠 6 の静電容量変化を検出する手段と して、 従来の鰺置容： I：形 ビデオデ ィ スク プ レー ヤ で用い られ ている、 共振回路を利用する方法も有用である 。 第 3  As a means for detecting a change in the capacitance of the depletion slaughter 6, a method using a resonance circuit, which is used in a conventional video disk player, is also useful. number 3
図にその要部構成を示す。 即ち、 空乏屠 6 の静電容量 を含む、 再生へ タ ド 7 と導罨体嫫 3 間のキ ャ シ タ 9  FIG. In other words, the cache 9 between the regeneration head 7 and the packing material 3 including the capacitance of the depletion slaughter 6
と、 再生へ グ ド 7 に接続されたイ ングク タ 1 0 に よ つ て共振回路 1 1 が構成される 。 この共振回路 1 1 の共 振周波数は、 再生へ プ ド 7 の移動に伴 う空乏層 6 の静 ：電容量変化に よ D変化する 。 そ こ で、 基準発振器 1 2  Thus, the resonance circuit 11 is constituted by the ink 10 connected to the good 7 for reproduction. The resonance frequency of the resonance circuit 11 changes by the static: capacitance change of the depletion layer 6 due to the movement of the pulse 7 to the reproduction. Therefore, the reference oscillator 1 2
から この共振回路 1 1 に励振信号を供給し、 共振回路  Supply an excitation signal to this resonance circuit 1 1
1 1 の出力をダイ ォー ド 1 3 、 抵抗 1 4 およびキ ャ  1 Connect the output of 1 to diode 13, resistor 14 and the capacitor.
/», WIPO ¾« シタ 1 5 か らな るピーク検波回路 1 6 を通 して取出す。 これによ ] 3、 空乏層 6 の静電容量変化に よ る共振周波 数の変化を検波出力の振幅変化と して検出すると とが でき、 従って記録信号の再生ができる 。 / », WIPO ¾ « Extracted through a peak detection circuit 16 consisting of a capacitor 15. [3] A change in the resonance frequency due to a change in the capacitance of the depletion layer 6 can be detected as a change in the amplitude of the detection output, and the recorded signal can be reproduced.
記録信号の消去は、 導電性消去へ ッ ドを記録 ト ラ ク上を移動 しめるがら、 記録の場合と逆極性の直 流信号または高周波信号を印加する こ と によ ])行われ る。 消去へ ： ドは記録へ タ ドと別に用意 して も よい し、 霍己録ヘ プ ドと兼用 と して も よ い。  The recording signal is erased by moving the conductive erase head on the recording track, and applying a DC signal or a high-frequency signal having the opposite polarity to that of the recording]). To erase: The record may be prepared separately from the record, or it may be shared with the record.
この よ う にとの記録再生装置では、 信号の記録、 再生および消去を、 磁気デ ィ スクにおける と同様に任 意に行う こ とができ る 。 従って 己録媒： ^をデ ィ ス ク状 にし、 記録 ト ラ グ クを らせん状または同心円状に形成 すれば、 従来の音声レ コ ー ドやビデオデ ィ スク  In such a recording / reproducing apparatus, recording, reproducing, and erasing of a signal can be arbitrarily performed in the same manner as in a magnetic disk. Therefore, if the self-recording medium: ^ is a disk, and the recording track is formed in a spiral or concentric shape, the conventional audio and video discs can be used.
ヽ では不 可能であった、 記録 よび再生の両方が可能な信号記 録デ ィ ス クを実現する こ とができ る · また、 との装置 では、 従来の磁気デ ィ ス クに比べて大き な再生出力を 得る こ とが容易であ ]?、 従って記録 ト ラ - クの輻を狭 くする こ とができ、 高密度記録が可能と ¾る 。 更に、 この装置は、 信号の記録、 再生動作は記録へ グ ド、 再 生ヘ プ ト，に よ ])行ってお ])、 記録媒体は半導体層に絶 縁体膜を被覆 しただけの簡単な も のであるか ら、 半導 体メ モ リ における よ う 複雑る電極配線を要せず、 大 量生産が可能で、 かつ信頼性も 高いも の と るる 。 .  It is possible to realize a signal recording disk that can perform both recording and playback, which was not possible with the ヽ. In addition, the above device can be larger than a conventional magnetic disk. Therefore, it is easy to obtain a proper reproduction output.] Therefore, the radiation of the recording track can be reduced, and high-density recording can be performed. In addition, this device performs signal recording and playback operations according to recording and playback heaps])]], and the recording medium is simply a semiconductor layer coated with an insulator film. As such, it does not require complicated electrode wiring as in semiconductor memory, and can be mass-produced and has high reliability. .
OMPI WIPO 第 4 図は この発明の別の実施例を示すも のである。 この実施例では、 n 型シ リ コ ン等の半導体屠 2 1 の表 面に、 記録 ト ラ ク と ¾ る領域にのみエ レク ト レ ツ ト に ]?易い铯縁体膜 2 2 が被覆されている 。 半導体屠 OMPI WIPO FIG. 4 shows another embodiment of the present invention. In this embodiment, the surface of a semiconductor chip 21 such as an n-type silicon is coated with an insulator film 22 which is easy to electrify only in an area corresponding to a recording track. Has been. Semiconductor slaughter
2 1 の裏面には全面に導電体膜 2 3 が被着されている。 この実施例における耙録動作は先の実施例と同様であ る。 即ち導電性記録へ - ド 2 4 によ ]?、 記録すべき信 号に応じた置荷が絶縁体膜 2 2 に注入され、 絶縁体膜  A conductive film 23 is applied to the entire back surface of 21. The rake recording operation in this embodiment is the same as in the previous embodiment. That is, to the conductive recording-according to the mode 24), the load corresponding to the signal to be recorded is injected into the insulating film 22 and the insulating film
2 2 がエ レク ト レ タ ト と ¾ る 。  22 2 is the electret.
この実施例では、 再生動作を電流検出によ ]?行う ため、 絶縁体膜 2 2 から ¾ る 15録 ト ラ プ ク の両側部に 沿って、 半導伴層 2 1 にこれと逆導電型の第 1 、 第 2 の不純物添加領域 2 5 , 2 6 を形成している β 第 2 の 不純物添加領绂 2 6 の表面には連続的に電極 2 7 が配 設されている 。 In this embodiment, since the reproducing operation is performed by current detection, the semiconducting layer 21 is formed on the semiconducting layer 21 along the opposite side along the both sides of the 15-record trap from the insulating film 22. An electrode 27 is continuously provided on the surface of the β- second impurity added region 26 forming the first and second impurity added regions 25 and 26.
再生動作は 第 5 図に示すよ う に、 第 1 の不純物 添加領域 2 5 の表面に摺接する導霍性再生へ P 2 8 を用意 し、 電極 2 7 を接地 して * 再生へ グ ド 2 8 に負 荷抵抗 2 9 を介して負の読出 し罨圧 VR を印加する と とに よ ]?行われる 。 即ち、 記録動作に よ 絶縁体膜 As shown in Fig. 5, the regenerating operation is as follows. Prepare P28 for conductive regeneration that slides on the surface of the first impurity-added region 25, ground the electrode 27, and by the preparative When applying a negative reading to罨圧V R 8 in via the load resistor 2 9]? performed. In other words, depending on the recording operation, the insulator film
2 2 に電荷 （ いま の場合負電荷 ） が蓄積されている位 置では、 第. 1.、一第 2 の不純物添加領域 2 5 , 2 6 間に - チ ャ ネ ルが形成されている 。 従って再生へ ッ ド 2 8 が その位置に く る と第 1 、 第 2 の不純物添加領域 2 5 , 2 6 間に電流が流れる。 電荷が蓄積されていない位置 ではこのよ う な電流が流れない。 こ う して、 再生へ グ ト， 2 S を相対的に移動せしめて、 出力電圧 Vo u t の変 化を検出する こ とに よ ]? 、 信号再生が行われる 。 At the position where electric charge (in this case, negative electric charge) is accumulated in 22, a-channel is formed between the first and second impurity-added regions 25 and 26. Therefore, when the reproducing head 28 comes to that position, the first and second impurity added regions 25, Current flows between 26. Such a current does not flow at a position where no charge is stored. And will this, grayed door to play, the 2 S is allowed to move relatively, by the and the child to detect the change of the output voltage V ou t]?, Signal reproduction is performed.
. なお、 この実施例では、 第 1 、 第 2 の不純物添加 領域 2 5 , 2 6 が記録 ト ラ グ ク に沿って連続的に形成 されているため、 再生へ グ ド 2 8 が、 チ ャ ネ ルが形成 されているい位置にあっても、 チ ャ ネ ルが形成されて いる位置か らの電流の回 ])込みが存在する 。 しか し、 この電流の回 ]?込みの影響は、 第 1 の不純物添加領域  In this embodiment, since the first and second impurity-added regions 25 and 26 are formed continuously along the recording traffic, the reproducing head 28 has a chamfer. Even at a position where a cell is formed, there is an electric current from the position where the channel is formed. However, the effect of this current inflow is that the first doped region
2 5 ©比抵抗または層抵抗を ある程度大き く 選ぶこ と に よ ]?、 避ける こ とができ る。 この電流の回 ]?込みの 影響が無視でき るい場合には、 例えば第 1 の不钝 添 加領域 2 5 を不連続的に彤成 し、 降接する不純物添加 領域の間に絶縁物を埋股する構造とすれぱよい。  2 5 © Select a specific resistance or layer resistance that is somewhat large.]? If the effect of this current reversal is negligible, for example, the first impurity-added region 25 is discontinuously formed, and an insulator is buried between the contaminated impurity-added regions. It is a good structure.
この実施例の場合、 第 1 、 第 2 の不純物添加領域  In the case of this embodiment, the first and second impurity-added regions
2 5 , 2 6 を設けて電流検出を行う ため、 先の実施例 に比べる と若干構造が複雑にな D、 また高密度化も,驵 害されるが、 基本的には先の実施例と同様の効果が得 られる 。  Since the current detection is performed by providing 25 and 26, the structure is slightly more complicated than in the previous embodiment.D and high density are also hindered, but basically the same as in the previous embodiment. The effect is obtained.
以上の実施例においては、 半導体層と してシ リ コ ン基扳を用いる場合を説明 したが、 現在の技術では、 単結晶半導体を用いたのではデ ィ スク の径の大き さに 制限がある 。 しか し、 多結晶半導体やア モ ル フ ァ ス半  In the above embodiment, the case where a silicon substrate is used as the semiconductor layer has been described. However, with the current technology, the size of the disk is limited when a single crystal semiconductor is used. is there . However, polycrystalline semiconductors and amorphous semiconductors
ΟΜΡΙ ΟΜΡΙ
th IPO - 導体を用いれば、 例えば金属基板上に化学蒸着等の手 段に よ U これらの半導体屠を形成する こ とに よ ]?、 直 径 2 0 〜 3 5 oaのディ スクの製作も容易である 。 また 記録媒体を必ずしも デ ィ ス ク状にする必要はな く 、 例 ぇぱテープ上にァモ ル フ ァ ス半導体層を形成した半導 体フ ィ ル ム の形態で用いる こ と も可能である 。 また、 信号の記録および再生のための ト ラ ク キ ン グ手段は、 最近の LS I に ける微細加工技術を利用して半導体層 上に微細な ト ラ グ キ ンダ溝を形成する こ とが容易にで き る ので、 特別なサー ^ シ ス テ ムを用 る こ と な く 実 現する こ とができ る 。 t h IPO- If conductors are used, for example, a method such as chemical vapor deposition on a metal substrate can be used to form these semiconductor layers], and disks with a diameter of 20 to 35 oa can be easily manufactured. . The recording medium does not necessarily have to be in the form of a disk, but can be used in the form of a semiconductor film in which an amorphous semiconductor layer is formed on a tape, for example. is there . In addition, the tracking method for recording and reproducing signals is to form a fine trench groove on the semiconductor layer by using a recent fine processing technology for LSI. It is easy to implement, and can be implemented without using a special service system.
産業上の利用可能性 Industrial applicability
こ の発明に係る信号記録再生装置は、 簡単な構造 の紀録媒体を用いて音声.、 像その他の情報信号を任 意に、 かつ高密度に記録し再生する もの と して有用で る。  INDUSTRIAL APPLICABILITY The signal recording / reproducing apparatus according to the present invention is useful as an apparatus for recording and reproducing an audio signal, an image, and other information signals arbitrarily and at a high density using a simple recording medium.

Claims

請 求 の ' 範 囲 The scope of the claims
1. 半導体屠を用いて信号の記録 よび再生をす る装置であ って ；  1. A device for recording and reproducing signals using semiconductor slaughter;
(1) 半導体層、  (1) semiconductor layer,
(2) と の半導佯屠上に形成された、 電荷を蓄穢する機 能を もつ絶縁体膜、 ' (2) An insulator film formed on the semiconductive slaughterhouse with the function of accumulating electric charge.
(3) との絶縁侓膜上を、 記録すべき信号が印加された 導 性記録ベ ドを相対的に移動せしめて、 と の絶 縁.体膜に電荷を注入して信号を記録する手段、 およ び  (3) The conductive recording layer, to which the signal to be recorded is applied, is moved relatively on the insulating film and the insulating layer is isolated from the means for recording signals by injecting charges into the body film. , and
(4) こ の手段に よ ])信号が耙録された記録 ト ラ タ クに 沿って導電性再生へ ッ ドを相対的に移動せしめて、 . 記録された信号に よ る J:記半導体層の電気的特性の 変化を検出 して信号を再生する手段、  (4) By this means]) Move the conductive playback head relatively along the recording track where the signal was recorded. Means for detecting changes in the electrical properties of the layer and reproducing the signal;
を含む信号 12録再生装置。 Including 12 signal recording and playback device.
2. 上 S己 S荷を蓄積する機能を もつ絶縁体膜は、 エ レク ト レ グ ト に： ¾ ]?易い絶縁体膜である請求の範囲 1 の信号紀録再生装置。  2. The insulator film having the function of accumulating the S-S load is in the electret: ：]?
3. 上言己半導体層の罨気的特性の変化を検出する 手段は、 上記導電性再生へ タ ト，と上記半導体層との間 の静電容量の変化を上記半導体層内に形成される空乏 屠の静罨容量の変化によ ]?検出する も のである請求の 範囲 1 の信号記録再生装置。  3. The means for detecting a change in the compressive property of the semiconductor layer includes forming a change in the capacitance between the conductive layer and the semiconductor layer in the semiconductor layer. The signal recording / reproducing apparatus according to claim 1, wherein the signal recording / reproducing apparatus detects the depletion due to a change in the capacity of the static compress.
4. 上記半導体屠の電気的特性の変化を検出する  4. Detect changes in the electrical characteristics of the semiconductor slaughter
* O PI Λ, WIFO - 手段は、 上記半導体層内に形成される空乏層の静電容 量を含む共振回路を構成して、 この共振回路の共振周 波数の変化を検出するも のである請求の範囲 1 の信号 記録再生装置。 * O PI Λ, WIFO- 2. The signal recording / reproducing apparatus according to claim 1, wherein the means comprises a resonance circuit including a capacitance of a depletion layer formed in the semiconductor layer, and detects a change in a resonance frequency of the resonance circuit. .
5. 上記半導体層の電気的特性の変化を検出する 手段は、 上首己記録 ト ラ ク に沿ってその両側部の上記 半導体層表面に形成された、 上記半導体層と逆導電型 の第 1 、 第 2 の不純物添加領垅と、 これらの不純物添 加領域の一方の表面に連続的に設けられた電極と、 他 方の表面に摺接させて上記導 ¾性再生へ - Pを移動せ しめて上記第 1 、 第 2 の不純物添加領域の間に流れる 電流を検出する手段、 を含む請求の範囲 1 の信号記録 再生装置。  5. The means for detecting a change in the electrical characteristics of the semiconductor layer includes a first conductive type opposite to the semiconductor layer, which is formed on the surface of the semiconductor layer on both sides along the upper neck self-recording track. A second impurity-added region, an electrode continuously provided on one surface of these impurity-added regions, and sliding contact with the other surface to move the -P to the conductive regeneration. 2. The signal recording / reproducing apparatus according to claim 1, further comprising: means for detecting a current flowing between the first and second impurity-added regions.
PCT/JP1980/000072 1979-04-13 1980-04-14 Signal recording/reproducing device WO1980002342A1 (en)

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Applications Claiming Priority (3)

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JP4424079A JPS55139643A (en) 1979-04-13 1979-04-13 Semiconductor recording and reproduction system
JP4424179A JPS55139644A (en) 1979-04-13 1979-04-13 Semiconductor recording system
JP79/44240 1979-04-13

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DE3273532D1 (en) * 1982-06-02 1986-11-06 Toshiba Kk Electrostatic voltage detecting device
US4907195A (en) * 1984-09-14 1990-03-06 Xerox Corporation Method of and system for atomic scale recording of information
US4829507A (en) * 1984-09-14 1989-05-09 Xerox Corporation Method of and system for atomic scale readout of recorded information
US4878213A (en) * 1984-09-14 1989-10-31 Xerox Corporation System for recording and readout of information at atomic scale densities and method therefor
AU6969894A (en) * 1993-05-15 1994-12-12 Sina Medical Gmbh New recording system
JPH08297871A (en) * 1995-04-21 1996-11-12 Hewlett Packard Co <Hp> High-density recording medium and large-capacity recorder
EP1227496A1 (en) * 2001-01-17 2002-07-31 Cavendish Kinetics Limited Non-volatile memory
KR100438832B1 (en) * 2001-11-23 2004-07-05 삼성전자주식회사 Information storage apparatus using semiconductor probe

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