JPS5513959A - Ferromagnetic resistance effect element - Google Patents

Ferromagnetic resistance effect element

Info

Publication number
JPS5513959A
JPS5513959A JP8736078A JP8736078A JPS5513959A JP S5513959 A JPS5513959 A JP S5513959A JP 8736078 A JP8736078 A JP 8736078A JP 8736078 A JP8736078 A JP 8736078A JP S5513959 A JPS5513959 A JP S5513959A
Authority
JP
Japan
Prior art keywords
paths
path
current
providing
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8736078A
Other languages
Japanese (ja)
Other versions
JPS6159553B2 (en
Inventor
Toshio Yamagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8736078A priority Critical patent/JPS5513959A/en
Publication of JPS5513959A publication Critical patent/JPS5513959A/en
Publication of JPS6159553B2 publication Critical patent/JPS6159553B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the occurrence of offset voltage, by providing a plurality of current paths by using ferromagnetic film, providing an electrode terminal on both ends of each path, and further providing at the end of each current path a resistance adjusting electrode terminal which divides the electric resistance of each cuerent path.
CONSTITUTION: By using ferromagnetic film consisting of Ni, 80%, and Fe for the remainder, current paths 3A∼3D are formed on insulating base 40 in the form of a grid. On both ends of these paths are provided electrode terminals 45 and 46, 47 and 48, 49 and 50, 51 and 52 respectively. Current paths 3A∼3D are constructed in the form of a grid, consisting of straight paths 41∼43 and bent parts 57∼60, which connect them. But, straight paths 41∼43 are arranged at right angles between neighboring paths of 3A∼3D. Resistance adjusting terminal group 53∼56 are provided, by drawing them out, on straight paths 41∼42, which are placed at the outermost part of 3A∼3D. When a dispersion occurred in the resistance values of paths 3A∼3D at the time of fabrication, offset voltage is reduced by aligning the resistance values by selectively using terminal group 53∼56.
COPYRIGHT: (C)1980,JPO&Japio
JP8736078A 1978-07-17 1978-07-17 Ferromagnetic resistance effect element Granted JPS5513959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8736078A JPS5513959A (en) 1978-07-17 1978-07-17 Ferromagnetic resistance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8736078A JPS5513959A (en) 1978-07-17 1978-07-17 Ferromagnetic resistance effect element

Publications (2)

Publication Number Publication Date
JPS5513959A true JPS5513959A (en) 1980-01-31
JPS6159553B2 JPS6159553B2 (en) 1986-12-17

Family

ID=13912711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8736078A Granted JPS5513959A (en) 1978-07-17 1978-07-17 Ferromagnetic resistance effect element

Country Status (1)

Country Link
JP (1) JPS5513959A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154282A (en) * 1982-03-10 1983-09-13 Hitachi Ltd Magneto-resistance element
JPS63147381A (en) * 1986-12-10 1988-06-20 Fujitsu Ltd Magnetism detecting element
JPH02107596U (en) * 1989-02-15 1990-08-27
KR20180064296A (en) 2016-12-05 2018-06-14 가부시키가이샤 고베 세이코쇼 Silicon nitride laminated film, organic electroluminescence element, electronic paper and optical adjustment film, and method for manufacturing silicon nitride laminated film
JP2020112430A (en) * 2019-01-11 2020-07-27 パナソニックＩｐマネジメント株式会社 Magnetic sensor and manufacturing method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49108552A (en) * 1973-08-15 1974-10-16
JPS5028989A (en) * 1973-07-13 1975-03-24
JPS51113468U (en) * 1975-03-10 1976-09-14
JPS5321763A (en) * 1976-08-13 1978-02-28 Hitachi Ltd Multiiterminal resistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028989A (en) * 1973-07-13 1975-03-24
JPS49108552A (en) * 1973-08-15 1974-10-16
JPS51113468U (en) * 1975-03-10 1976-09-14
JPS5321763A (en) * 1976-08-13 1978-02-28 Hitachi Ltd Multiiterminal resistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58154282A (en) * 1982-03-10 1983-09-13 Hitachi Ltd Magneto-resistance element
JPH0462190B2 (en) * 1982-03-10 1992-10-05 Hitachi Ltd
JPS63147381A (en) * 1986-12-10 1988-06-20 Fujitsu Ltd Magnetism detecting element
JPH0467795B2 (en) * 1986-12-10 1992-10-29 Fujitsu Ltd
JPH02107596U (en) * 1989-02-15 1990-08-27
KR20180064296A (en) 2016-12-05 2018-06-14 가부시키가이샤 고베 세이코쇼 Silicon nitride laminated film, organic electroluminescence element, electronic paper and optical adjustment film, and method for manufacturing silicon nitride laminated film
JP2020112430A (en) * 2019-01-11 2020-07-27 パナソニックＩｐマネジメント株式会社 Magnetic sensor and manufacturing method therefor

Also Published As

Publication number Publication date
JPS6159553B2 (en) 1986-12-17

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