JPH0462190B2 - - Google Patents
Info
- Publication number
- JPH0462190B2 JPH0462190B2 JP57036440A JP3644082A JPH0462190B2 JP H0462190 B2 JPH0462190 B2 JP H0462190B2 JP 57036440 A JP57036440 A JP 57036440A JP 3644082 A JP3644082 A JP 3644082A JP H0462190 B2 JPH0462190 B2 JP H0462190B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetically sensitive
- bonding pad
- sensitive parts
- lead
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Description
【発明の詳細な説明】
本発明は回転体の回転角度、回転数を計測する
磁気抵抗素子に係わり、特に回転を検出するに好
適な磁気抵抗素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive element for measuring the rotation angle and rotational speed of a rotating body, and particularly to a magnetoresistive element suitable for detecting rotation.
第１図は従来より提案されている磁気抵抗素子
の一例を示す平面図である。同図において、１は
非磁性材でかつ電気的絶縁性を有する例えばガラ
ス板などからなる基板であり、この基板１の所定
位置には磁気抵抗効果を有する感磁部２ａ，２
ｂ，２ｃ，２ｄがそれぞれ計測する磁極幅と同一
ピツチで形成され、またこれらの各感磁部２ａ，
２ｂ，２ｃ，２ｄの両端には感磁信号、電源電流
を授受するリード部３ａ，３ｂ，３ｃ，３ｄ，３
ｅが形成され、さらにこれらのリード部３ａ，３
ｂ，３ｃ，３ｄ，３ｅの他端側には外部回路と電
気的に接続するボンデイングパツド４ａ，４ｂ，
４ｃ，４ｄ，４ｅが形成されている。そして、こ
れらの感磁部２ａ〜２ｄ、リード部３ａ〜３ｅお
よびボンデイングパツド４ａ〜４ｅは基板１上に
パーマロイを蒸着して形成されたパーマロイパタ
ーンで構成されている。 FIG. 1 is a plan view showing an example of a conventionally proposed magnetoresistive element. In the figure, reference numeral 1 denotes a substrate made of a non-magnetic material and electrically insulating, for example, a glass plate, and magnetically sensitive parts 2a, 2 having a magnetoresistive effect are placed at predetermined positions on the substrate 1.
b, 2c, and 2d are formed at the same pitch as the magnetic pole width to be measured, and each of these magnetic sensing parts 2a,
Lead portions 3a, 3b, 3c, 3d, 3 are provided at both ends of 2b, 2c, 2d for transmitting and receiving magnetic sensing signals and power supply current.
e is formed, and these lead parts 3a, 3
On the other end sides of b, 3c, 3d, and 3e, bonding pads 4a, 4b, and 4b are electrically connected to an external circuit.
4c, 4d, and 4e are formed. The magnetically sensitive parts 2a to 2d, the lead parts 3a to 3e, and the bonding pads 4a to 4e are composed of a permalloy pattern formed by vapor-depositing permalloy on the substrate 1.
このように構成された磁気抵抗素子は、被検出
体の磁極から磁気信号を大きくとるために一般的
には第２図で示すように差動方式、つまりブリツ
ジ回路を構成するように接続して用られる。すな
わち、同図において、Raは感磁部２ａの電気抵
抗、Rbは感磁部２ｂ、Rcは感磁部２ｃ、Rdは感
磁部２ｄのそれぞれの電気抵抗を示し、電源電圧
Ｖはボンデイングパツド４ｃと４ａ，４ｅ間に接
続されて上記感磁部２ａ，２ｂ，２ｃ，２ｄに磁
場を感知すると、感磁部２ａ〜２ｄの抵抗変化に
対応してボンデイングパツド４ｂと４ｄとから第
３図に示すように正弦波の信号電圧V1とV2とが
それぞれ得られる。 In order to obtain a large magnetic signal from the magnetic pole of the object to be detected, magnetic resistance elements configured in this manner are generally connected in a differential manner, that is, to form a bridge circuit, as shown in Figure 2. used. That is, in the figure, Ra represents the electrical resistance of the magnetically sensitive part 2a, Rb represents the electrical resistance of the magnetically sensitive part 2b, Rc represents the electrical resistance of the magnetically sensitive part 2c, and Rd represents the electrical resistance of the magnetically sensitive part 2d, and the power supply voltage V represents the electrical resistance of the magnetically sensitive part 2d. When a magnetic field is sensed by the magnetic sensing parts 2a, 2b, 2c, and 2d connected between the pads 4c and 4a, 4e, a magnetic field is sensed from the bonding pads 4b and 4d in response to a change in the resistance of the magnetic sensing parts 2a to 2d. As shown in FIG. 3, sinusoidal signal voltages V 1 and V 2 are obtained, respectively.
しかしながら上記構成による磁気抵抗素子にお
いて、各感磁部２ａ〜２ｄとこれに対応するボン
デイングパツド４ａ〜４ｅとの間に形成された各
リード部３ａ，３ｂ，３ｃ，３ｄ，３ｅは、各ボ
ンデイングパツド部４ａ〜４ｅのパターン表面積
が大きいため、それぞれ複雑な形状を有するパタ
ーン形状となることから、動作中の周囲温度の変
化、製作中のパターン形成の偏差（バラツキ）等
に対して抵抗値が個々に変動し、ボンデイングパ
ツド４ｂ，４ｄから出力される正弦波の信号電圧
V1，V2のオフセツト電圧V0、つまり信号電圧V1
とV2との電位差あるいは信号電圧V1，V2の約10
％以下の電圧が第４図に示すように大幅に偏差し
て高精度の出力信号が得られないという問題があ
つた。 However, in the magnetoresistive element having the above configuration, each lead part 3a, 3b, 3c, 3d, 3e formed between each magnetically sensitive part 2a to 2d and the corresponding bonding pad 4a to 4e is connected to each bonding pad. Since the pattern surface area of the pad portions 4a to 4e is large, each pattern has a complicated shape, so the resistance value will be affected by changes in ambient temperature during operation, deviations (variations) in pattern formation during manufacturing, etc. are varied individually, and the sine wave signal voltage output from bonding pads 4b and 4d
Offset voltage V 0 of V 1 and V 2 , that is, signal voltage V 1
and V 2 or approximately 10 of the signal voltages V 1 and V 2
% or less, as shown in FIG. 4, there was a problem that a highly accurate output signal could not be obtained.
このような問題を改善したものとしては、磁気
抵抗素子の検出回路にオフセツト調整用の抵抗を
接続し、この抵抗値を調整することによつて、オ
フセツト量をほぼ零近傍となるように設定して用
いられていた。 To improve this problem, a resistor for offset adjustment is connected to the detection circuit of the magnetoresistive element, and by adjusting the value of this resistor, the amount of offset can be set to approximately zero. It was used as
しかしながら上記構成による磁気抵抗素子によ
ると、オフセツト量の調整が極めて複雑であると
ともに、その調整作業に多大な労力と調整時間を
要し、生産性を大幅に低下させるなどの欠点があ
つた。 However, the magnetoresistive element having the above structure has drawbacks such as extremely complicated adjustment of the offset amount, requiring a great deal of labor and time, and greatly reducing productivity.
したがつて本発明は、上記従来の欠点を改善す
るためになされたものであり、その目的とすると
ころは、各感磁部とボンデイングパツド間のリー
ド部の抵抗値を個々に一定となるようにリード部
を形成したものである。 Therefore, the present invention has been made in order to improve the above-mentioned conventional drawbacks, and its purpose is to make the resistance value of the lead part between each magnetic sensing part and the bonding pad individually constant. The lead portion is formed as shown in FIG.
以下図面を用いて本発明の実施例を詳細に説明
する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第５図は本発明による磁気抵抗素子の一例を示
す前記第１図に相当する平面図であり、前述の図
と同記号は同一要素となるのでその説明は省略す
る。同図において、各感磁部２ａ，２ｂ，２ｃ，
２ｄとボンデイングパツド４ａ，４ｂ，４ｃ，４
ｄ，４ｅ間にそれぞれ接続される各リード部３
a′，３b′，３c′，３d′，３e′は、それぞれ対応す
る各感磁部２ａ，２ｂ，２ｃ，２ｄと各ボンデイ
ングパツド４ａ，４ｂ，４ｃ，４ｄ，４ｅ間の距
離に対応してそれぞれ相互間で抵抗値がほぼ同等
となるように各リードの線幅を広くして形成され
ている。すなわち各リード部３a′，３b′，３c′，
３d′，３e′の抵抗をそれぞれra，rb，rc，rd，re
としたとき、中央部のボンデイングパツド４ｃに
対して両端部のボンデイングパツド４ａ，４ｅは
距離が長くなるので、各リード部３a′，３b′，３
c′，３d′，３e′は抵抗値がra＞rb＞rc，re＞rd＞
reとなるように各線幅を異ならせて形成されてい
る。換言すれば、感磁部２ａ，２ｂ，２ｃ，２ｄ
の面積は小さいので、各抵抗（Ra，Rb，Rc，
Rd）の抵抗値を一致させることは容易であるが、
一方これに対応する各ボンデイングパツド部４
ａ，４ｂ，４ｃ，４ｄ，４ｅの面積が大きいた
め、リード部３a′，３b′，３c′，３d′，３e′の形
状が複雑となるので、その抵抗ra，rb，rc，rd，
reをra＞rb＞rc，re＞rd＞rcとなるように各リー
ド部３a′，３b′，３c′，３d′，３e′のパターン線
幅を調整することによつて、それぞれ各感磁部−
リード部−ボンデイングパツドの直列合成抵抗を
一致させたものである。第６図はその等価回路図
を示したものである。また、リード部３a′，３
b′，３c′，３d′，３e′の他の具体例としては膜厚
のみを大きくする方法もしくは感磁部２ａ，２
ｂ，２ｃ，２ｄよりも抵抗変化率の小さい金属膜
等を用いることにより、各リード部３a′，３b′，
３c′，３d′，３e′の抵抗値ra，rb，rc，rd，reは
各感磁部の抵抗Ra，Rb，Rc，Rdに対して無視
できる量とすることができ、したがつて第７図に
示すようにボンデイングパツド４ｂ，４ｄからオ
フセツト量の極めて小さい信号電圧V′1，V′2が得
られた。また、ボンデイングパツド４ｂ，４ｄか
ら出力される信号電圧V′1，V′2を電源電圧Ｖの1/
２に設定するには、両端側のリード部３ａ，３ｅ
の抵抗ra，reをそれぞれ2rc、つまりra＝2rc，re
＝2rcとなるように各リード３a′，３e′の抵抗ra，
reを線幅、膜厚で調整もしくは抵抗変化率の小さ
い金属膜を使用することによつて容易に設定可能
である。 FIG. 5 is a plan view corresponding to FIG. 1 showing an example of the magnetoresistive element according to the present invention, and since the same symbols as in the previous figure represent the same elements, a description thereof will be omitted. In the figure, each magnetic sensing part 2a, 2b, 2c,
2d and bonding pads 4a, 4b, 4c, 4
Each lead part 3 connected between d and 4e
a', 3b', 3c', 3d', 3e' correspond to the distances between the corresponding magnetic sensing parts 2a, 2b, 2c, 2d and the bonding pads 4a, 4b, 4c, 4d, 4e, respectively. Each lead is formed with a wide line width so that the resistance values thereof are approximately the same. That is, each lead portion 3a', 3b', 3c',
The resistances of 3d′ and 3e′ are ra, rb, rc, rd, and re, respectively.
In this case, the distance between the bonding pads 4a and 4e at both ends is longer than the bonding pad 4c at the center, so each lead portion 3a', 3b', 3
The resistance values of c′, 3d′, and 3e′ are ra＞rb＞rc, re＞rd＞
Each line is formed with a different width so that the line width is re. In other words, the magnetically sensitive parts 2a, 2b, 2c, 2d
Since the area of is small, each resistance (Ra, Rb, Rc,
Although it is easy to match the resistance values of Rd),
On the other hand, each bonding pad portion 4 corresponding to this
Since the areas of a, 4b, 4c, 4d, and 4e are large, the shapes of lead portions 3a', 3b', 3c', 3d', and 3e' are complicated, so their resistances ra, rb, rc, rd,
Each magnetically sensitive Department
The series combined resistances of the lead part and the bonding pad are matched. FIG. 6 shows its equivalent circuit diagram. In addition, lead portions 3a', 3
Other specific examples of b', 3c', 3d' and 3e' include a method of increasing only the film thickness or a method of increasing the magnetically sensitive parts 2a, 2
Each lead portion 3a', 3b',
The resistance values ra, rb, rc, rd, and re of 3c', 3d', and 3e' can be negligible with respect to the resistances Ra, Rb, Rc, and Rd of each magnetically sensitive part, so the As shown in FIG. 7, signal voltages V' 1 and V' 2 with extremely small offset amounts were obtained from bonding pads 4b and 4d. Also, the signal voltages V' 1 and V' 2 output from the bonding pads 4b and 4d are set to 1/1 of the power supply voltage V.
2, the lead parts 3a and 3e on both ends
The resistances ra and re are respectively 2rc, that is, ra = 2rc, re
The resistance ra of each lead 3a', 3e' is set so that =2rc,
It is possible to easily set re by adjusting the line width and film thickness, or by using a metal film with a small resistance change rate.
以上説明したように本発明によれば、磁気抵抗
素子自体にオフセツト量を小さく設定することが
できるので、検出回路において、オフセツト調整
用の抵抗が不要となるため、調整抵抗およびその
調整時間が節約できる。また、特に同時に多相の
磁気検出を行なう場合には、相数の分だけ調整抵
抗の数および調整時間が節約となるので生産性を
大幅に向上させることができるなどの極めて優れ
た効果が得られる。 As explained above, according to the present invention, the amount of offset can be set to a small value in the magnetoresistive element itself, so there is no need for a resistor for offset adjustment in the detection circuit, so the adjustment resistor and the adjustment time can be saved. can. In addition, especially when performing multi-phase magnetic detection at the same time, the number of adjustment resistors and adjustment time are reduced by the number of phases, resulting in extremely excellent effects such as greatly improving productivity. It will be done.
第１図ないし第４図は従来の磁気抵抗素子の一
例を説明するための図、第５図ないし第７図は本
発明による磁気抵抗素子の一例を示す図である。
１……基板、２ａ，２ｂ，２ｃ，２ｄ……感磁
部、３ａ，３ｂ，３ｃ，３ｄ，３ｅ……リード
部、４ａ，４ｂ，４ｃ，４ｄ，４ｅ……ボンデイ
ングパツド。
1 to 4 are diagrams for explaining an example of a conventional magnetoresistive element, and FIGS. 5 to 7 are diagrams illustrating an example of a magnetoresistive element according to the present invention. 1...Substrate, 2a, 2b, 2c, 2d...Magnetic sensitive part, 3a, 3b, 3c, 3d, 3e...Lead part, 4a, 4b, 4c, 4d, 4e...Bonding pad.
Claims (1)
ａ，２ｂ，２ｃ，２ｄを略々平行に配し、前記４
ケのヘアピンのうち、一方の２ケの感磁部２ａ，
２ｂによつてブリツジ回路の一方の辺を形成し、
他方の２ケの感磁部２ｃ，２ｄによつてブリツジ
回路の他の辺を形成し、前記ブリツジ回路を形成
する前記一方の２ケの感磁部２ａ，２ｂの中点
と、前記他方の２ケの感磁部２ｃ，２ｄの中点と
の差動出力を検出する磁気抵抗素子において、前
記一方および他方の感磁部のうちの一端は共通端
を有していて共通ボンデイングパツドに接続さ
れ、前記一方の２ケの感磁部２ａ，２ｂは第２の
端を有して第２のボンデイングパツドに接続さ
れ、前記他方の２ケの感磁部２ｃ，２ｄは第３の
端を有して第３のボンデイングパツドに接続さ
れ、前記共通端と前記共通ボンデイングパツド間
のリード部抵抗rcは前記第２の端子と前記第２の
ボンデイングパツド間のリード部抵抗raおよび前
記第３の端子と前記第３のボンデイングパツド間
のリード部抵抗reの1/2となるようにしたことを
特徴とした磁気抵抗素子。1 4 hairpin-shaped magnetic sensing parts 2 on a glass substrate
a, 2b, 2c, and 2d are arranged approximately in parallel, and the above-mentioned 4
Among the hairpins, one of the two magnetically sensitive parts 2a,
2b forms one side of the bridge circuit,
The other two magnetically sensitive parts 2c and 2d form the other side of the bridge circuit, and the middle point of the two magnetically sensitive parts 2a and 2b forming the bridge circuit is connected to the other side. In a magnetoresistive element that detects a differential output between the midpoints of two magnetically sensitive parts 2c and 2d, one end of the one and the other magnetically sensitive parts has a common end and is connected to a common bonding pad. The two magnetically sensitive parts 2a, 2b have second ends and are connected to the second bonding pad, and the other two magnetically sensitive parts 2c, 2d have their second ends connected to the second bonding pad. The lead resistance rc between the common end and the common bonding pad is equal to the lead resistance ra between the second terminal and the second bonding pad. and a magnetoresistive element, characterized in that the lead portion resistance re between the third terminal and the third bonding pad is 1/2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036440A JPS58154282A (en) | 1982-03-10 | 1982-03-10 | Magneto-resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57036440A JPS58154282A (en) | 1982-03-10 | 1982-03-10 | Magneto-resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58154282A JPS58154282A (en) | 1983-09-13 |
| JPH0462190B2 true JPH0462190B2 (en) | 1992-10-05 |
Family
ID=12469864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57036440A Granted JPS58154282A (en) | 1982-03-10 | 1982-03-10 | Magneto-resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58154282A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6218077A (en) * | 1985-07-16 | 1987-01-27 | Dai Ichi Seiko Co Ltd | Magnetoresistance element |
| JPS64352U (en) * | 1987-06-19 | 1989-01-05 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513959A (en) * | 1978-07-17 | 1980-01-31 | Nec Corp | Ferromagnetic resistance effect element |
| JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
-
1982
- 1982-03-10 JP JP57036440A patent/JPS58154282A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513959A (en) * | 1978-07-17 | 1980-01-31 | Nec Corp | Ferromagnetic resistance effect element |
| JPS55130187A (en) * | 1979-03-30 | 1980-10-08 | Sony Corp | Magnetoelectric transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58154282A (en) | 1983-09-13 |
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