JPS55133740A - Secondary ion mass spectrometer - Google Patents

Secondary ion mass spectrometer

Info

Publication number
JPS55133740A
JPS55133740A JP4059379A JP4059379A JPS55133740A JP S55133740 A JPS55133740 A JP S55133740A JP 4059379 A JP4059379 A JP 4059379A JP 4059379 A JP4059379 A JP 4059379A JP S55133740 A JPS55133740 A JP S55133740A
Authority
JP
Japan
Prior art keywords
sensitivity
elements
shutter
increased
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4059379A
Other languages
Japanese (ja)
Inventor
Kenji Kusao
Yoshiaki Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4059379A priority Critical patent/JPS55133740A/en
Publication of JPS55133740A publication Critical patent/JPS55133740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252—Tubes for spot-analysing by electron or ion beams; Microanalysers

Abstract

PURPOSE:To analyze all elements contained in the same sample with high sensitivity by providing a Cs molecular beam deposition device whose sample chamber is provided with shutter and a mechanism to introduce O2 into the sample chamber. CONSTITUTION:When analyzing elements with a higher sensitivity of positive ion, e.g., Fe, etc., the shutter 19 of the Cs molecular beam deposition device 14 is closed and the valve 20 is opened to introduce O2, whereupon the sensitivity of Fe is increased approx. 10<3> times. Thus, if O2 is introduced and the emission of Cs is selected according to element to be analyzed, all elements can easily be analyzed with high sensitivity by one mass spectrometer, leaving primary ion Ar<+> intact. Also, in cases where elements whose sensitivity is increased by Cs emission and elements whose sensitivity is increased by the introduction of O2 are obtained in the same sample, two mass spectrometers are used. Also, if positive and negative secondary ions are detected by the lock-in amplifier 26 by introducing O2 in an amount enough to be adsorbed in the surface of sample and using as a reference signal of the chopping frequency by the shutter 19 of Cs beam, both ions can be measured concurrently with high sensitivity.
JP4059379A 1979-04-03 1979-04-03 Secondary ion mass spectrometer Pending JPS55133740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4059379A JPS55133740A (en) 1979-04-03 1979-04-03 Secondary ion mass spectrometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4059379A JPS55133740A (en) 1979-04-03 1979-04-03 Secondary ion mass spectrometer

Publications (1)

Publication Number Publication Date
JPS55133740A true JPS55133740A (en) 1980-10-17

Family

ID=12584799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4059379A Pending JPS55133740A (en) 1979-04-03 1979-04-03 Secondary ion mass spectrometer

Country Status (1)

Country Link
JP (1) JPS55133740A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101850A (en) * 1983-11-08 1985-06-05 Jeol Ltd Ion beam device
JPS60182651A (en) * 1984-02-29 1985-09-18 Hitachi Ltd Ion microanalyzer
JPS60185351A (en) * 1984-03-05 1985-09-20 Hitachi Ltd Charged particle beam control method
JP2006258770A (en) * 2005-03-18 2006-09-28 Fujitsu Ltd Method and instrument for measuring depth-directional element distribution
WO2017029754A1 (en) * 2015-08-20 2017-02-23 株式会社日立製作所 Ion beam device and method for analyzing sample elements

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101850A (en) * 1983-11-08 1985-06-05 Jeol Ltd Ion beam device
JPH0326498B2 (en) * 1983-11-08 1991-04-11 Nippon Electron Optics Lab
JPS60182651A (en) * 1984-02-29 1985-09-18 Hitachi Ltd Ion microanalyzer
JPH0363174B2 (en) * 1984-02-29 1991-09-30 Hitachi Ltd
JPS60185351A (en) * 1984-03-05 1985-09-20 Hitachi Ltd Charged particle beam control method
JP2006258770A (en) * 2005-03-18 2006-09-28 Fujitsu Ltd Method and instrument for measuring depth-directional element distribution
WO2017029754A1 (en) * 2015-08-20 2017-02-23 株式会社日立製作所 Ion beam device and method for analyzing sample elements
JPWO2017029754A1 (en) * 2015-08-20 2018-07-05 株式会社日立製作所 Ion beam apparatus and sample element analysis method

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