JPS55130160A - Fabricating method of p-n hetero junction element - Google Patents
Fabricating method of p-n hetero junction elementInfo
- Publication number
- JPS55130160A JPS55130160A JP3703579A JP3703579A JPS55130160A JP S55130160 A JPS55130160 A JP S55130160A JP 3703579 A JP3703579 A JP 3703579A JP 3703579 A JP3703579 A JP 3703579A JP S55130160 A JPS55130160 A JP S55130160A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- evacuated
- nitrogen gas
- junction element
- polyacetylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000005842 heteroatom Chemical group 0.000 title 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 3
- 229920001197 polyacetylene Polymers 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910052740 iodine Inorganic materials 0.000 abstract 2
- 239000011630 iodine Substances 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 230000003197 catalytic effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3703579A JPS55130160A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of p-n hetero junction element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3703579A JPS55130160A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of p-n hetero junction element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55130160A true JPS55130160A (en) | 1980-10-08 |
JPS6223468B2 JPS6223468B2 (enrdf_load_stackoverflow) | 1987-05-22 |
Family
ID=12486358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3703579A Granted JPS55130160A (en) | 1979-03-30 | 1979-03-30 | Fabricating method of p-n hetero junction element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55130160A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5399502A (en) * | 1989-04-20 | 1995-03-21 | Cambridge Display Technology Limited | Method of manufacturing of electrolumineschent devices |
-
1979
- 1979-03-30 JP JP3703579A patent/JPS55130160A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5399502A (en) * | 1989-04-20 | 1995-03-21 | Cambridge Display Technology Limited | Method of manufacturing of electrolumineschent devices |
Also Published As
Publication number | Publication date |
---|---|
JPS6223468B2 (enrdf_load_stackoverflow) | 1987-05-22 |
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