JPS55122869A - Coating method for hafnium carbide (hfc) - Google Patents

Coating method for hafnium carbide (hfc)

Info

Publication number
JPS55122869A
JPS55122869A JP2919379A JP2919379A JPS55122869A JP S55122869 A JPS55122869 A JP S55122869A JP 2919379 A JP2919379 A JP 2919379A JP 2919379 A JP2919379 A JP 2919379A JP S55122869 A JPS55122869 A JP S55122869A
Authority
JP
Japan
Prior art keywords
hfc
substrate
heated
iodide
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2919379A
Other languages
Japanese (ja)
Other versions
JPS6215634B2 (en
Inventor
Moriaki Fuyama
Mitsuru Ura
Haruhiko Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP2919379A priority Critical patent/JPS55122869A/en
Publication of JPS55122869A publication Critical patent/JPS55122869A/en
Publication of JPS6215634B2 publication Critical patent/JPS6215634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a dense and abrasion-resisting HfC coating, by forming Hf iodide by reacting I2 with Hf in the same reaction system and moreover, heating at a low temperature after forming HfC by passing a mixed gas introduced a hydrocarbon through a heated substrate. CONSTITUTION:The WC substrate 6 is put in the reaction vessel 1 heated by the electric furnace 2 and the Hf 8 is put in the Hf vessel 9. Next, the I2 10 is introduced into the dry ice box 11 and Hf iodide is formed by reacting the I2 10 with the Hf 8 after reducing the pressure in the vessel 1. Then, hydrocarbon, such as C4H11, etc., and Ar, are introduced through the stop valve 7 and the flowmeter 12, and mixed gas mixed with Hf iodide and the above gas are passed through the substrate 6 heated at 1050-1250 deg.C (less than liquid phase appearance temperature of the WC substrate) and HfC having a good adhesive property, is formed and continuously, the substrate 6 is heated at a temperature of 800-1050 deg.C and then, HfC coating is formed in two-step temperature.
JP2919379A 1979-03-13 1979-03-13 Coating method for hafnium carbide (hfc) Granted JPS55122869A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2919379A JPS55122869A (en) 1979-03-13 1979-03-13 Coating method for hafnium carbide (hfc)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2919379A JPS55122869A (en) 1979-03-13 1979-03-13 Coating method for hafnium carbide (hfc)

Publications (2)

Publication Number Publication Date
JPS55122869A true JPS55122869A (en) 1980-09-20
JPS6215634B2 JPS6215634B2 (en) 1987-04-08

Family

ID=12269356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2919379A Granted JPS55122869A (en) 1979-03-13 1979-03-13 Coating method for hafnium carbide (hfc)

Country Status (1)

Country Link
JP (1) JPS55122869A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106826108A (en) * 2016-12-26 2017-06-13 常熟市惠机电有限公司 A kind of preparation method of high temp.-resistant valve connector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106826108A (en) * 2016-12-26 2017-06-13 常熟市惠机电有限公司 A kind of preparation method of high temp.-resistant valve connector

Also Published As

Publication number Publication date
JPS6215634B2 (en) 1987-04-08

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