JPS55117270A - Junction breakdown type field programmable cell array semiconductor device - Google Patents

Junction breakdown type field programmable cell array semiconductor device

Info

Publication number
JPS55117270A
JPS55117270A JP2371279A JP2371279A JPS55117270A JP S55117270 A JPS55117270 A JP S55117270A JP 2371279 A JP2371279 A JP 2371279A JP 2371279 A JP2371279 A JP 2371279A JP S55117270 A JPS55117270 A JP S55117270A
Authority
JP
Japan
Prior art keywords
layer
collector
type
writing
cell array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2371279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343899B2 (enrdf_load_stackoverflow
Inventor
Tadao Takeda
Masao Suzuki
Mitsuo Usami
Kazuo Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP2371279A priority Critical patent/JPS55117270A/ja
Publication of JPS55117270A publication Critical patent/JPS55117270A/ja
Publication of JPS6343899B2 publication Critical patent/JPS6343899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
JP2371279A 1979-03-01 1979-03-01 Junction breakdown type field programmable cell array semiconductor device Granted JPS55117270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2371279A JPS55117270A (en) 1979-03-01 1979-03-01 Junction breakdown type field programmable cell array semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2371279A JPS55117270A (en) 1979-03-01 1979-03-01 Junction breakdown type field programmable cell array semiconductor device

Publications (2)

Publication Number Publication Date
JPS55117270A true JPS55117270A (en) 1980-09-09
JPS6343899B2 JPS6343899B2 (enrdf_load_stackoverflow) 1988-09-01

Family

ID=12117948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2371279A Granted JPS55117270A (en) 1979-03-01 1979-03-01 Junction breakdown type field programmable cell array semiconductor device

Country Status (1)

Country Link
JP (1) JPS55117270A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115862A (ja) * 1985-11-15 1987-05-27 Nec Corp 半導体記憶装置
US5455448A (en) * 1992-09-03 1995-10-03 Sgs-Thomson Microelectronics, Inc. Bipolar, monolithic, high-power RF transistor with isolated top collector
US6029388A (en) * 1997-01-17 2000-02-29 Matsushita Electric Industrial Co., Ltd. Light-emitting fishing lure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62115862A (ja) * 1985-11-15 1987-05-27 Nec Corp 半導体記憶装置
US5455448A (en) * 1992-09-03 1995-10-03 Sgs-Thomson Microelectronics, Inc. Bipolar, monolithic, high-power RF transistor with isolated top collector
US6029388A (en) * 1997-01-17 2000-02-29 Matsushita Electric Industrial Co., Ltd. Light-emitting fishing lure

Also Published As

Publication number Publication date
JPS6343899B2 (enrdf_load_stackoverflow) 1988-09-01

Similar Documents

Publication Publication Date Title
GB1450494A (en) Semiconductor devices with high break-down voltage character istics
JPS54157092A (en) Semiconductor integrated circuit device
JPS55133569A (en) Semiconductor device
GB883906A (en) Improvements in semi-conductive arrangements
JPS5691478A (en) Manufacture of punch-through type diode
GB920630A (en) Improvements in the fabrication of semiconductor elements
JPS55117270A (en) Junction breakdown type field programmable cell array semiconductor device
GB1279917A (en) Improvements in or relating to integrated circuits which have a multiple emitter transistor
JPS55153367A (en) Semiconductor device
GB1305471A (enrdf_load_stackoverflow)
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
JPS566471A (en) Field effect type thyristor
JPS5565453A (en) Semiconductor device
JPS56104467A (en) Reverse conducting thyristor
GB1433667A (en) Bipolar transistors
JPS55158663A (en) Transistor
JPS54141578A (en) Semiconductor device
JPS55165673A (en) Semiconductor device
JPS5538080A (en) Semiconductor device
JPS55102263A (en) Semiconductor integrated circuit
GB923339A (en) Improvements in or relating to silicon diodes
GB964431A (en) Improvements in or relating to transistors
JPS5469391A (en) Integrated composite element
JPS5623751A (en) Manufacture of integrated circuit device
JPS572580A (en) Semiconductor device