JPS55113927A - Thermal noise thermometer - Google Patents

Thermal noise thermometer

Info

Publication number
JPS55113927A
JPS55113927A JP2165479A JP2165479A JPS55113927A JP S55113927 A JPS55113927 A JP S55113927A JP 2165479 A JP2165479 A JP 2165479A JP 2165479 A JP2165479 A JP 2165479A JP S55113927 A JPS55113927 A JP S55113927A
Authority
JP
Japan
Prior art keywords
fet
voltage
transistor
input stage
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2165479A
Other languages
Japanese (ja)
Other versions
JPS5858013B2 (en
Inventor
Makoto Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Hokushin Electric Corp
Yokogawa Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Hokushin Electric Corp, Yokogawa Electric Works Ltd filed Critical Yokogawa Hokushin Electric Corp
Priority to JP2165479A priority Critical patent/JPS5858013B2/en
Publication of JPS55113927A publication Critical patent/JPS55113927A/en
Publication of JPS5858013B2 publication Critical patent/JPS5858013B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To enable the measurement of high accuracy, by eliminating the influence of an induced gate noise in an AC amplifier employing an FET in the input stage of a preamplifier.
CONSTITUTION: An FET Q1 of an input stage is cascade-connected by a transistor Q2. Even if the base voltage of the transistor Q2 is changed, the DC level of its collector current scarcely varies. Therefore, the change in the base voltage of the transistor Q2 does not appear on an output voltage. When a switch SW is closed, the base of the taransistor Q2 is grounded in an AC manner by a capacitor C1 and the fluctuation in the drain voltage of the FET Q1 is very small. When the switch SW is open, an induced gate noise is caused as compensation in the FET Q1 of the input stage by a voltage which appears across the drain of the FET.
COPYRIGHT: (C)1980,JPO&Japio
JP2165479A 1979-02-26 1979-02-26 thermal noise thermometer Expired JPS5858013B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2165479A JPS5858013B2 (en) 1979-02-26 1979-02-26 thermal noise thermometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2165479A JPS5858013B2 (en) 1979-02-26 1979-02-26 thermal noise thermometer

Publications (2)

Publication Number Publication Date
JPS55113927A true JPS55113927A (en) 1980-09-02
JPS5858013B2 JPS5858013B2 (en) 1983-12-23

Family

ID=12061028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2165479A Expired JPS5858013B2 (en) 1979-02-26 1979-02-26 thermal noise thermometer

Country Status (1)

Country Link
JP (1) JPS5858013B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS592314U (en) * 1982-06-30 1984-01-09 横河電機株式会社 ultrasonic probe

Also Published As

Publication number Publication date
JPS5858013B2 (en) 1983-12-23

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