JPS55110042A - Electron beam diagram projector - Google Patents
Electron beam diagram projectorInfo
- Publication number
- JPS55110042A JPS55110042A JP1617979A JP1617979A JPS55110042A JP S55110042 A JPS55110042 A JP S55110042A JP 1617979 A JP1617979 A JP 1617979A JP 1617979 A JP1617979 A JP 1617979A JP S55110042 A JPS55110042 A JP S55110042A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- deflection
- lens
- mask
- flux
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain an effective projecting area free from deflection with high resolving power by a method wherein a dynamic converging lens system for setting an electron beam source image and a dynamic deflection system for deflecting electron beam flux are provided at the front focal point position of an irradiating lens constituting a projector. CONSTITUTION:Electron beam flux from an electron beam source is converged by a converging lens 3 while voltage is applied to an irradiating lens 5 via deflection systems 15 and 16, and the electron beam flux is projected to the surface of a mask 6. According to this constitution, the front focal point position 19' of the lens 5 is always made to conform to the deflection center 13 and the crossover image, letting an outer edge electron beam 22' approach a central electron beam 14, thus making the beam vertically incident upon the surface of a mask 6 as shown by 23'. For doing like this, the excitation of the lens 3 is corrected by synchronizing it with the transference of the deflection center, and the crossover image 4 is moved to the deflection center 13. By so doing, the electron beam flux is always kept vertically incident upon the surface of the mask, and the resolving power can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1617979A JPS55110042A (en) | 1979-02-16 | 1979-02-16 | Electron beam diagram projector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1617979A JPS55110042A (en) | 1979-02-16 | 1979-02-16 | Electron beam diagram projector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55110042A true JPS55110042A (en) | 1980-08-25 |
Family
ID=11909277
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1617979A Pending JPS55110042A (en) | 1979-02-16 | 1979-02-16 | Electron beam diagram projector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55110042A (en) |
-
1979
- 1979-02-16 JP JP1617979A patent/JPS55110042A/en active Pending
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