JPS55108731A - Cleaning method - Google Patents

Cleaning method

Info

Publication number
JPS55108731A
JPS55108731A JP1560379A JP1560379A JPS55108731A JP S55108731 A JPS55108731 A JP S55108731A JP 1560379 A JP1560379 A JP 1560379A JP 1560379 A JP1560379 A JP 1560379A JP S55108731 A JPS55108731 A JP S55108731A
Authority
JP
Japan
Prior art keywords
chemical
cleaning
injected
water
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1560379A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Mamoru Maeda
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1560379A priority Critical patent/JPS55108731A/en
Publication of JPS55108731A publication Critical patent/JPS55108731A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To enable the storage of cleaning chemical in gaseous form and reduse the volume to be stored while the cheaning is operated in a chemical treatment box only sanitarily, by a method wherein a water solution is prepared by injecting a gaseous chemical into water and thereby cleaning work is performed conveniently.
CONSTITUTION: Ammonia gas is injected into a water solution of H2O2 and thereby a mixed solution such that NH4OH:H2O2:H2O=4:1:4 is produced. In cleaning a silicon wafer initially, this solution is used to remove heavy metal or organic substances. In this case, cleaning is operated at temperatures 60W80°C in the conventional method. But when NH3 is injected, the temperature rises due to the reaction heat. This is convenient. A chemical gas bomb is connected to gaseous chemical inlet 1, and the gas is injected into high purity water 2 in a quartz container, and it is discharged from discharge port 3. When a required amount is formed, it is taken out for use by operating cock 4.
COPYRIGHT: (C)1980,JPO&Japio
JP1560379A 1979-02-13 1979-02-13 Cleaning method Pending JPS55108731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1560379A JPS55108731A (en) 1979-02-13 1979-02-13 Cleaning method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1560379A JPS55108731A (en) 1979-02-13 1979-02-13 Cleaning method

Publications (1)

Publication Number Publication Date
JPS55108731A true JPS55108731A (en) 1980-08-21

Family

ID=11893289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1560379A Pending JPS55108731A (en) 1979-02-13 1979-02-13 Cleaning method

Country Status (1)

Country Link
JP (1) JPS55108731A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025532A (en) * 1983-07-21 1985-02-08 Showa Denko Kk Preparation of high quality aqueous solution
JPH0496329A (en) * 1990-08-14 1992-03-27 Kawasaki Steel Corp Manufacture of semiconductor device
US5196134A (en) * 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025532A (en) * 1983-07-21 1985-02-08 Showa Denko Kk Preparation of high quality aqueous solution
JPS6210683B2 (en) * 1983-07-21 1987-03-07 Showa Denko Kk
US5196134A (en) * 1989-12-20 1993-03-23 Hughes Aircraft Company Peroxide composition for removing organic contaminants and method of using same
JPH0496329A (en) * 1990-08-14 1992-03-27 Kawasaki Steel Corp Manufacture of semiconductor device

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