JPS549169A - Method of producing single crystal - Google Patents

Method of producing single crystal

Info

Publication number
JPS549169A
JPS549169A JP7440177A JP7440177A JPS549169A JP S549169 A JPS549169 A JP S549169A JP 7440177 A JP7440177 A JP 7440177A JP 7440177 A JP7440177 A JP 7440177A JP S549169 A JPS549169 A JP S549169A
Authority
JP
Japan
Prior art keywords
single crystal
producing single
solution
seed crystal
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7440177A
Other languages
English (en)
Other versions
JPS5848516B2 (ja
Inventor
Toshiharu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP52074401A priority Critical patent/JPS5848516B2/ja
Publication of JPS549169A publication Critical patent/JPS549169A/ja
Publication of JPS5848516B2 publication Critical patent/JPS5848516B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP52074401A 1977-06-24 1977-06-24 単結晶の製造方法 Expired JPS5848516B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52074401A JPS5848516B2 (ja) 1977-06-24 1977-06-24 単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52074401A JPS5848516B2 (ja) 1977-06-24 1977-06-24 単結晶の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP14062584A Division JPS6042295A (ja) 1984-07-09 1984-07-09 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS549169A true JPS549169A (en) 1979-01-23
JPS5848516B2 JPS5848516B2 (ja) 1983-10-28

Family

ID=13546123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52074401A Expired JPS5848516B2 (ja) 1977-06-24 1977-06-24 単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS5848516B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641897A (en) * 1979-09-11 1981-04-18 Nec Corp Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film
JPH06271387A (ja) * 1993-03-23 1994-09-27 Sumitomo Sitix Corp シリコン単結晶引上装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144475A (ja) * 1974-10-14 1976-04-16 Hitachi Ltd Tanketsushoikuseisochi
JPS5230273A (en) * 1975-08-28 1977-03-07 Little Inc A Apparatus for forming semiconductor crystals having substantially homogeneous diameter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144475A (ja) * 1974-10-14 1976-04-16 Hitachi Ltd Tanketsushoikuseisochi
JPS5230273A (en) * 1975-08-28 1977-03-07 Little Inc A Apparatus for forming semiconductor crystals having substantially homogeneous diameter

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5641897A (en) * 1979-09-11 1981-04-18 Nec Corp Liquid-phase epitaxially-growing apparatus for oxide single crystal thin film
JPH06271387A (ja) * 1993-03-23 1994-09-27 Sumitomo Sitix Corp シリコン単結晶引上装置

Also Published As

Publication number Publication date
JPS5848516B2 (ja) 1983-10-28

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