JPS5489297A - Voltage non-linear resistor - Google Patents

Voltage non-linear resistor

Info

Publication number
JPS5489297A
JPS5489297A JP15954477A JP15954477A JPS5489297A JP S5489297 A JPS5489297 A JP S5489297A JP 15954477 A JP15954477 A JP 15954477A JP 15954477 A JP15954477 A JP 15954477A JP S5489297 A JPS5489297 A JP S5489297A
Authority
JP
Japan
Prior art keywords
voltage non
zno
linear resistor
added
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15954477A
Other languages
Japanese (ja)
Other versions
JPS5725964B2 (en
Inventor
Masahiko Hayashi
Hoki Haba
Misuzu Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP15954477A priority Critical patent/JPS5489297A/en
Publication of JPS5489297A publication Critical patent/JPS5489297A/en
Publication of JPS5725964B2 publication Critical patent/JPS5725964B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

PURPOSE: To reduce leakage current increasing rate for normal applying voltage considerably, by adding micro amount of B2O3 and WO3 into ZnO system non- linear rsistor.
CONSTITUTION: Main component of ZnO is added with Bi2O3;0.1-3%, Co2O3; 0.05-3%, MnO2;0.05-3%, Sb2O3;0.1-5%, Cr2O3;0.02-3%, SiO2;0.05-5%, NiO;0.1- 5%, then further added with 0.002-0.5 mol % of B2O3 and WO3 and burnt. Said burning is preferable to be performed under 1100-1300°C. With such composition excellent voltage non-linearity is obtained across small current to large current region, resulting in a resistor having excellent life.
COPYRIGHT: (C)1979,JPO&Japio
JP15954477A 1977-12-27 1977-12-27 Voltage non-linear resistor Granted JPS5489297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15954477A JPS5489297A (en) 1977-12-27 1977-12-27 Voltage non-linear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15954477A JPS5489297A (en) 1977-12-27 1977-12-27 Voltage non-linear resistor

Publications (2)

Publication Number Publication Date
JPS5489297A true JPS5489297A (en) 1979-07-16
JPS5725964B2 JPS5725964B2 (en) 1982-06-02

Family

ID=15696065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15954477A Granted JPS5489297A (en) 1977-12-27 1977-12-27 Voltage non-linear resistor

Country Status (1)

Country Link
JP (1) JPS5489297A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2900768A1 (en) * 2006-05-05 2007-11-09 Areva T & D Sa USE OF B2O3 IN A SEMICONDUCTOR CERAMIC TO REDUCE LEAKAGE CURRENT AND POSSIBLY TO STABILIZE ELECTRICAL PROPERTIES

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2900768A1 (en) * 2006-05-05 2007-11-09 Areva T & D Sa USE OF B2O3 IN A SEMICONDUCTOR CERAMIC TO REDUCE LEAKAGE CURRENT AND POSSIBLY TO STABILIZE ELECTRICAL PROPERTIES
WO2007128785A1 (en) * 2006-05-05 2007-11-15 Areva T&D Sa Use of b203 in a tin oxide-based semi conductive ceramic for reducing the leakage current thereof and for possibly stabilizing the electrical properties thereof

Also Published As

Publication number Publication date
JPS5725964B2 (en) 1982-06-02

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